公开(公告)号：US06090304A

公开(公告)日：2000-07-18

申请号：US919659

申请日：1997-08-28

申请人： Helen H. Zhu ,  George A. Mueller ,  Thomas D. Nguyen ,  Lumin Li

发明人： Helen H. Zhu ,  George A. Mueller ,  Thomas D. Nguyen ,  Lumin Li

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  C03C15/00

CPC分类号： H01L21/31116

摘要： Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N.sub.2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si.sub.3 N.sub.4, TiN, and metal silicides.

摘要翻译： 公开了一种提高介电层对光致抗蚀剂层和基层的选择性的方法。 该方法在等离子体处理室中进行，光致抗蚀剂层涂覆在电介质层上。 该方法包括将蚀刻剂源气体引入等离子体处理室中，其主要由C x F y气体和N 2气体组成。 该方法还包括从蚀刻剂源气体中冲击等离子体处理室中的等离子体。 该方法还包括用等离子体将介电层的至少一部分蚀刻到在电介质层下面的基底层。 该方法也非常适用于对Si，Si 3 N 4，TiN和金属硅化物具有非常高的选择性的各向异性蚀刻氧化物层。