公开(公告)号：US4978418A

公开(公告)日：1990-12-18

申请号：US233511

申请日：1988-08-18

申请人： George W. Arnold, Jr. ,  Carol I. H. Ashby ,  Paul J. Brannon

发明人： George W. Arnold, Jr. ,  Carol I. H. Ashby ,  Paul J. Brannon

IPC分类号： C04B41/00 ,  C04B41/80 ,  C23F1/02 ,  G02B6/134 ,  H01L21/311

CPC分类号： H01L21/31111 ,  C04B41/0027 ,  C04B41/80 ,  C23F1/02 ,  G02B6/1347

摘要： A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

摘要翻译： 通过在待蚀刻的区域中注入具有多个不同动能的离子，然后使离子注入区与蚀刻剂接触来蚀刻诸如LiNbO 3的材料的方法。 选择离子的各种能量以在待蚀刻区域的整个深度上基本均匀地产生植入物损伤，从而调整损伤区域的垂直轮廓。