公开(公告)号：US07839001B2

公开(公告)日：2010-11-23

申请号：US12536082

申请日：2009-08-05

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L21/762 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07670929B2

公开(公告)日：2010-03-02

申请号：US11624070

申请日：2007-01-17

申请人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

发明人： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

摘要翻译： 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。