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    Methods for making substrates and substrates formed therefrom
    7.
    发明申请
    Methods for making substrates and substrates formed therefrom 审中-公开
    制造基材和由其形成的基材的方法

    公开(公告)号：US20070141803A1

    公开(公告)日：2007-06-21

    申请号：US11505668

    申请日：2006-08-16

    申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen

    发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

    摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support.

    摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。

    Strain engineered composite semiconductor substrates and methods of forming same
    8.
    发明授权
    Strain engineered composite semiconductor substrates and methods of forming same 有权
    应变工程复合半导体基板及其形成方法

    公开(公告)号：US08679942B2

    公开(公告)日：2014-03-25

    申请号：US12610065

    申请日：2009-10-30

    申请人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

    发明人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

    IPC分类号： H01L29/20

    CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/76254

    摘要： Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.

    摘要翻译： 生产复合衬底，其包括在支撑衬底上的应变III族氮化物材料种子层。 制造复合衬底的方法包括在III族氮化物材料中开发所需的晶格应变，以产生基本上与要在复合衬底上形成的器件结构的晶格参数匹配的晶格参数。 III族氮化物材料可以形成为Ga极性或N极性。 可以通过在III族氮化物材料和生长衬底之间形成缓冲层来形成所需的晶格应变，在III族氮化物材料中注入掺杂剂以改变其晶格参数，或者用热系数形成III族氮化物材料 在具有不同CTE的生长衬底上的膨胀（CTE）。

    Composite structure with high heat dissipation
    10.
    发明授权
    Composite structure with high heat dissipation 有权
    复合结构散热性好

    公开(公告)号：US07135383B2

    公开(公告)日：2006-11-14

    申请号：US11020040

    申请日：2004-12-21

    申请人： Bruce Faure ,  Alice Boussagol

    发明人： Bruce Faure ,  Alice Boussagol

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

    摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 此外，选择层状结构材料和每层的厚度使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体块状SiC的热阻抗的约1.3倍的值 晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。