公开(公告)号：US08278216B1

公开(公告)日：2012-10-02

申请号：US11506761

申请日：2006-08-18

申请人： Glenn Alers ,  Nerissa Draeger ,  Michael Carolus ,  Julie Carolus, legal representative

发明人： Glenn Alers ,  Nerissa Draeger ,  Michael Carolus

IPC分类号： H01L21/44

CPC分类号： C23C16/04 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849

摘要： The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the surrounding dielectric material. The methods typically involve exposing the copper lines to a nitrogen-containing organo-metallic precursor and a reducing agent under conditions that the metal or metal nitride layer is selectively deposited. In a particular embodiment, an amino-containing tungsten precursor is used to deposit a tungsten nitride layer. Deposition methods such as CVD or ALD may be used.

摘要翻译： 本发明提供了将难熔金属和金属氮化物覆盖层选择性地沉积在嵌入介电层中的铜线上的方法。 该方法导致在铜线上形成覆盖层，而不会在周围的电介质材料上形成明显的形成。 所述方法通常包括在选择性沉积金属或金属氮化物层的条件下将铜线暴露于含氮有机金属前体和还原剂。 在一个具体实施方案中，使用含氨基的钨前体沉积氮化钨层。 可以使用CVD或ALD等沉积方法。

公开(公告)号：US08039379B1

公开(公告)日：2011-10-18

申请号：US11772767

申请日：2007-07-02

申请人： Glenn Alers ,  Robert H. Havemann

发明人： Glenn Alers ,  Robert H. Havemann

IPC分类号： H01L21/20

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76858

摘要： Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remove the functional agents leaving behind a continuous capping layer. The resulting cap layer is about 1 to 10 nm thick with 30-100% atomic of the nanoparticle material. Various semiconductor processing tools may be adapted for this deposition process without adding footprint in the semiconductor fabrication plant.

摘要翻译： 官能化纳米颗粒沉积在金属线上，镶嵌在电介质中以形成减少金属线中电迁移的金属覆盖层。 将功能化纳米颗粒沉积在活化的金属表面上，然后烧结并退火以去除留下连续覆盖层的功能试剂。 所得的帽层为约1至10nm厚，具有30-100％原子的纳米颗粒材料。 各种半导体处理工具可以适用于该沉积工艺，而不在半导体制造工厂中增加占位面积。

公开(公告)号：US07994640B1

公开(公告)日：2011-08-09

申请号：US11772784

申请日：2007-07-02

申请人： Glenn Alers ,  Robert H. Havemann

发明人： Glenn Alers ,  Robert H. Havemann

IPC分类号： H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/288 ,  H01L21/67161 ,  H01L21/67196 ,  H01L21/76834

摘要： Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remove the functional agents leaving behind a continuous capping layer. The resulting cap layer is about 1 to 10 nm thick with 30-100% atomic of the nanoparticle material. Various semiconductor processing tools may be adapted for this deposition process without adding footprint in the semiconductor fabrication plant.

公开(公告)号：US20130213472A1

公开(公告)日：2013-08-22

申请号：US13883340

申请日：2011-11-02

申请人： David Powell ,  Glenn Alers ,  Jeremy Olson

发明人： David Powell ,  Glenn Alers ,  Jeremy Olson

IPC分类号： H01L31/055 ,  H01L31/18

CPC分类号： H01L31/055 ,  H01L31/0392 ,  H01L31/042 ,  H01L31/0481 ,  H01L31/0547 ,  H01L31/18 ,  Y02E10/52

摘要： A luminescent solar concentrator apparatus includes an optically transparent substrate and a photovoltaic material layer at least partially embedded within an optically transparent encapsulant material layer that contacts the optically transparent substrate. A luminescent material layer also contacts the optically transparent encapsulant material layer. Generally, the luminescent solar concentrator apparatus provides that the luminescent material layer is not located within an incoming optical pathway through at least the optically transparent substrate to the photovoltaic material layer.

摘要翻译： 发光太阳能集中器装置包括光学透明基板和至少部分地嵌入光学透明密封材料层内的光学材料层，所述光学透明基板与光学透明基板接触。 发光材料层也与光学透明的密封剂材料层接触。 通常，发光太阳能集中器装置提供了发光材料层不位于通过至少光学透明衬底到光伏材料层的入射光学路径内。