公开(公告)号：US08493762B2

公开(公告)日：2013-07-23

申请号：US12647874

申请日：2009-12-28

申请人： Gou Ninomiya ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

发明人： Gou Ninomiya ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

IPC分类号： H02M7/5387 ,  H05K7/20

CPC分类号： H01L25/112 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

摘要翻译： 功率半导体模块包括构成第一系统的电路中的每个臂的第一系统的半导体元件，构成第二系统的电路中的每个臂的第二系统的半导体元件，包括公共的多个直流电极导体 连接到第一和第二系统的半导体元件的直流电极导体，以及连接到第一和第二系统的各个半导体元件的多个AC电极导体。 第一和第二系统的每个半导体元件插入在DC电极导体和AC电极导体之间​​。

公开(公告)号：US07605456B2

公开(公告)日：2009-10-20

申请号：US11628250

申请日：2005-06-01

申请人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

发明人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

IPC分类号： H05K7/20

CPC分类号： H02M7/003 ,  H01L25/115 ,  H01L2224/49111 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00

摘要： To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device.The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductor 33 joined to a positive side of the semiconductor chip; and a second conductor 35 joined to a negative side of the semiconductor chip. The first and second conductors are disposed above a cooler 22 cooling the semiconductor chip so that a joint surface of the first conductor 33 which is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductor 35 which is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler 22.

摘要翻译： 通过进一步提高功率效率器件的冷却效率，提供具有优良制造性能和电流承载能力的逆变器单元，从而提高了尺寸。 逆变器单元包括：构成逆变器的臂的半导体芯片; 连接到半导体芯片的正极侧的第一导体33; 以及连接到半导体芯片的负极侧的第二导体35。 第一和第二导体设置在冷却器22的上方，冷却半导体芯片，使得接合到半导体芯片的正电极的第一导体33的接合表面和与第二导体35接合的第二导体35的接合表面 半导体芯片的负电极不与冷却器22的表面平行。

公开(公告)号：US20090237890A1

公开(公告)日：2009-09-24

申请号：US12299877

申请日：2007-02-01

申请人： Hiroki Sekiya ,  Toshiharu Oobu ,  Ryuichi Morikawa ,  Gou Ninomiya ,  Hiroyuki Hiramoto

发明人： Hiroki Sekiya ,  Toshiharu Oobu ,  Ryuichi Morikawa ,  Gou Ninomiya ,  Hiroyuki Hiramoto

IPC分类号： H05K7/20 ,  H01L21/50

CPC分类号： H01L25/071 ,  H01L23/3735 ,  H01L24/48 ,  H01L25/115 ,  H01L25/50 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: a semiconductor element (106) having a surface on a positive electrode side and a surface on a negative electrode side; multiple conductors (13 to 15) bonded respectively to the surface on the positive electrode side and to the surface on the negative electrode side of the semiconductor element; a heat sink plate (11) disposed as intersecting a junction interface between the semiconductor element and each of the multiple conductors and configured to discharge heat of the semiconductor element; and an insulator (12) bonding the heat sink plate to the multiple conductors. The insulator includes a heat conductive insulator (16) disposed inside a portion facing all of the multiple conductors and a flexible insulator (17) disposed at a portion other than the heat conductive insulator.

摘要翻译： 半导体器件包括：具有在正极侧表面和负极侧的表面的半导体元件（106）; 多个导体（13〜15）分别与半导体元件的正极侧和负极侧的表面接合， 散热板（11），设置成与所述半导体元件和所述多个导体中的每一个之间的结界面相交并且被配置为放电所述半导体元件的热; 以及将散热板连接到多个导体的绝缘体（12）。 绝缘体包括设置在面向所有多个导体的部分内的导热绝缘体（16），以及布置在导热绝缘体以外的部分的柔性绝缘体（17）。

公开(公告)号：US20070217241A1

公开(公告)日：2007-09-20

申请号：US11628250

申请日：2005-06-01

申请人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

发明人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

IPC分类号： H02M7/42

CPC分类号： H02M7/003 ,  H01L25/115 ,  H01L2224/49111 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00

摘要： To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device. The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductor 33 joined to a positive side of the semiconductor chip; and a second conductor 35 joined to a negative side of the semiconductor chip. The first and second conductors are disposed above a cooler 22 cooling the semiconductor chip so that a joint surface of the first conductor 33 which is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductor 35 which is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler 22.

摘要翻译： 通过进一步提高功率效率器件的冷却效率，提供具有优良制造性能和电流承载能力的逆变器单元，从而提高了尺寸。 逆变器单元包括：构成逆变器的臂的半导体芯片; 连接到半导体芯片的正极侧的第一导体33; 以及连接到半导体芯片的负极侧的第二导体35。 第一和第二导体设置在冷却器22的上方，冷却半导体芯片，使得接合到半导体芯片的正电极的第一导体33的接合表面和与第二导体35接合的第二导体35的接合表面 半导体芯片的负电极不与冷却器22的表面平行。

公开(公告)号：US20110156797A1

公开(公告)日：2011-06-30

申请号：US12647874

申请日：2009-12-28

申请人： Gou NINOMIYA ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

发明人： Gou NINOMIYA ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

IPC分类号： H03K17/60

CPC分类号： H01L25/112 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

摘要翻译： 功率半导体模块包括构成第一系统的电路中的每个臂的第一系统的半导体元件，构成第二系统的电路中的每个臂的第二系统的半导体元件，包括公共的多个直流电极导体 连接到第一和第二系统的半导体元件的直流电极导体，以及连接到第一和第二系统的各个半导体元件的多个AC电极导体。 第一和第二系统的每个半导体元件插入在DC电极导体和AC电极导体之间​​。