利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.01 秒)

    Method of manufacturing an inverter device
    1.
    发明授权
    Method of manufacturing an inverter device 失效
    制造逆变器装置的方法

    公开(公告)号：US07487581B2

    公开(公告)日：2009-02-10

    申请号：US11723826

    申请日：2007-03-22

    申请人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Keizo Hagiwara ,  Shimpei Yoshioka

    发明人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Keizo Hagiwara ,  Shimpei Yoshioka

    IPC分类号： H01F7/06

    CPC分类号： H02M7/003 ,  H01L25/18 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  Y10T29/49002 ,  Y10T29/4902 ,  Y10T29/4913 ,  Y10T29/53178 ,  Y10T29/53183 ,  Y10T29/53261 ,  H01L2924/00

    摘要： By providing a plurality of semiconductor chips that are connected in parallel and constitute one arm of an inverter; a first conductor to which a face on one side of said plurality of semiconductor chips is connected; a wide conductor to which a face on the other side of said plurality of semiconductor chips is connected; a second conductor said first conductor and second conductor are connected connected to said wide conductor; and a cooler to which through an insulating resin sheet, part of the heat loss generated in the semiconductor chips is thermally conducted to the first conductor and is thence thermally conducted to the cooler, producing cooling, while another part thereof is thermally conducted to the wide conductor and thence to the second conductor, whence it is thermally conducted to the cooler, producing cooling.

    摘要翻译： 通过提供并联连接并构成逆变器的一个臂的多个半导体芯片; 连接所述多个半导体芯片的一侧的面的第一导体; 所述多个半导体芯片的另一侧的面连接的宽导体; 第二导体，所述第一导体和第二导体连接到所述宽导体; 以及冷却器，通过绝缘树脂片将半导体芯片中产生的热损失的一部分热传导到第一导体，然后热传导到冷却器，产生冷却，而另一部分被热传导到宽 导体，然后连接到第二导体，从而将其传导到冷却器，产生冷却。

    Inverter Unit
    2.
    发明申请
    Inverter Unit 有权
    变频器单元

    公开(公告)号：US20070217241A1

    公开(公告)日：2007-09-20

    申请号：US11628250

    申请日：2005-06-01

    申请人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

    发明人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

    IPC分类号： H02M7/42

    CPC分类号： H02M7/003 ,  H01L25/115 ,  H01L2224/49111 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00

    摘要： To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device. The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductor 33 joined to a positive side of the semiconductor chip; and a second conductor 35 joined to a negative side of the semiconductor chip. The first and second conductors are disposed above a cooler 22 cooling the semiconductor chip so that a joint surface of the first conductor 33 which is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductor 35 which is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler 22.

    摘要翻译： 通过进一步提高功率效率器件的冷却效率，提供具有优良制造性能和电流承载能力的逆变器单元，从而提高了尺寸。 逆变器单元包括：构成逆变器的臂的半导体芯片; 连接到半导体芯片的正极侧的第一导体33; 以及连接到半导体芯片的负极侧的第二导体35。 第一和第二导体设置在冷却器22的上方，冷却半导体芯片，使得接合到半导体芯片的正电极的第一导体33的接合表面和与第二导体35接合的第二导体35的接合表面 半导体芯片的负电极不与冷却器22的表面平行。

    Power semiconductor module and semiconductor power converter provided with the same
    4.
    发明授权
    Power semiconductor module and semiconductor power converter provided with the same 有权
    功率半导体模块与半导体功率转换器相同

    公开(公告)号：US08493762B2

    公开(公告)日：2013-07-23

    申请号：US12647874

    申请日：2009-12-28

    申请人： Gou Ninomiya ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

    发明人： Gou Ninomiya ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

    IPC分类号： H02M7/5387 ,  H05K7/20

    CPC分类号： H01L25/112 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

    摘要： A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

    摘要翻译： 功率半导体模块包括构成第一系统的电路中的每个臂的第一系统的半导体元件，构成第二系统的电路中的每个臂的第二系统的半导体元件，包括公共的多个直流电极导体 连接到第一和第二系统的半导体元件的直流电极导体，以及连接到第一和第二系统的各个半导体元件的多个AC电极导体。 第一和第二系统的每个半导体元件插入在DC电极导体和AC电极导体之间​​。

    Inverter unit
    5.
    发明授权
    Inverter unit 有权
    变频器单元

    公开(公告)号：US07605456B2

    公开(公告)日：2009-10-20

    申请号：US11628250

    申请日：2005-06-01

    申请人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

    发明人： Toshiharu Obu ,  Nobumitsu Tada ,  Hiroki Sekiya ,  Gou Ninomiya

    IPC分类号： H05K7/20

    CPC分类号： H02M7/003 ,  H01L25/115 ,  H01L2224/49111 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00

    摘要： To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device.The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductor 33 joined to a positive side of the semiconductor chip; and a second conductor 35 joined to a negative side of the semiconductor chip. The first and second conductors are disposed above a cooler 22 cooling the semiconductor chip so that a joint surface of the first conductor 33 which is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductor 35 which is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler 22.

    摘要翻译： 通过进一步提高功率效率器件的冷却效率，提供具有优良制造性能和电流承载能力的逆变器单元，从而提高了尺寸。 逆变器单元包括：构成逆变器的臂的半导体芯片; 连接到半导体芯片的正极侧的第一导体33; 以及连接到半导体芯片的负极侧的第二导体35。 第一和第二导体设置在冷却器22的上方，冷却半导体芯片，使得接合到半导体芯片的正电极的第一导体33的接合表面和与第二导体35接合的第二导体35的接合表面 半导体芯片的负电极不与冷却器22的表面平行。

    POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR POWER CONVERTER PROVIDED WITH THE SAME
    8.
    发明申请
    POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR POWER CONVERTER PROVIDED WITH THE SAME 有权
    功率半导体模块和半导体功率转换器

    公开(公告)号：US20110156797A1

    公开(公告)日：2011-06-30

    申请号：US12647874

    申请日：2009-12-28

    申请人： Gou NINOMIYA ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

    发明人： Gou NINOMIYA ,  Toshiharu Obu ,  Kazuhiro Ueda ,  Yoshiyuki Shimizu ,  Shinichi Baba

    IPC分类号： H03K17/60

    CPC分类号： H01L25/112 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

    摘要： A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.

    摘要翻译： 功率半导体模块包括构成第一系统的电路中的每个臂的第一系统的半导体元件，构成第二系统的电路中的每个臂的第二系统的半导体元件，包括公共的多个直流电极导体 连接到第一和第二系统的半导体元件的直流电极导体，以及连接到第一和第二系统的各个半导体元件的多个AC电极导体。 第一和第二系统的每个半导体元件插入在DC电极导体和AC电极导体之间​​。