公开(公告)号：US07064361B1

公开(公告)日：2006-06-20

申请号：US10865634

申请日：2004-06-10

Applicant: David Howard ,  Marco Racanelli ,  Greg D. U'Ren

Inventor： David Howard ,  Marco Racanelli ,  Greg D. U'Ren

IPC: H01L29/739

CPC classification number: H01L29/66287 ,  H01L21/8249 ,  H01L29/1004 ,  H01L29/167 ,  H01L29/66242 ,  H01L29/66272

Abstract: According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-germanium heterojunction bipolar transistor. The base layer can be, for example, silicon-germanium. According to this exemplary embodiment, the NPN bipolar transistor further comprises a cap layer situated over the base layer, where a portion of the cap layer is situated over the extrinsic base region, and where the portion of the cap layer situated over the extrinsic base region comprises an indium dopant. The cap layer may be, for example, polycrystalline silicon. According to this exemplary embodiment, the NPN bipolar transistor may further comprise an emitter situated over the intrinsic base region. The emitter may be, for example, polycrystalline silicon.

Abstract translation: 根据一个示例性实施例，NPN双极晶体管包括位于集电极上方的基极层，其中基极层包含本征基极区域和外部基极区域。 NPN双极晶体管可以是例如NPN硅 - 锗异质结双极晶体管。 基层可以是例如硅 - 锗。 根据该示例性实施例，NPN双极晶体管还包括位于基极层之上的覆盖层，其中覆盖层的一部分位于外部本体区域之上，并且其中覆盖层的位于外部基极区域之上的部分 包括铟掺杂剂。 盖层可以是例如多晶硅。 根据该示例性实施例，NPN双极晶体管还可以包括位于本征基极区域上方的发射极。 发射极可以是例如多晶硅。

公开(公告)号：US20090127585A1

公开(公告)日：2009-05-21

申请号：US12321410

申请日：2009-01-21

Applicant: Greg D. U'ren

Inventor： Greg D. U'ren

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/7378 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar transistor further includes a cap layer situated on the base, where the cap layer includes a barrier region. The barrier region can comprises carbon and has a thickness, where the thickness of the barrier region determines a depth of an emitter-junction of the heterojunction bipolar transistor. An increase in the thickness of the barrier region can cause a decrease in the depth of the emitter-base junction. According to this exemplary embodiment, the heterojunction bipolar transistor further includes an emitter situated over the cap layer, where the emitter comprises an emitter dopant, which can be phosphorus. A diffusion retardant in the barrier region of the cap layer impedes diffusion of the emitter dopant.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括位于衬底上的基极。 例如，异质结双极晶体管可以是NPN硅 - 锗异质结双极晶体管。 异质结双极晶体管还包括位于基底上的覆盖层，其中覆盖层包括阻挡区。 阻挡区域可以包括碳并且具有厚度，其中阻挡区域的厚度确定异质结双极晶体管的发射极结的深度。 阻挡区域的厚度的增加可能导致发射极 - 基极结的深度减小。 根据该示例性实施例，异质结双极晶体管还包括位于覆盖层上方的发射极，其中发射极包括发射极掺杂剂，其可以是磷。 盖层的阻挡区域中的扩散阻挡剂阻止发射体掺杂剂的扩散。

公开(公告)号：US07498620B1

公开(公告)日：2009-03-03

申请号：US11525457

申请日：2006-09-21

Applicant: Greg D. U'Ren

Inventor： Greg D. U'Ren

IPC: H01L29/739

CPC classification number: H01L29/7378 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium heterojunction bipolar transistor, for example. The heterojunction bipolar transistor further includes a cap layer situated on the base, where the cap layer includes a barrier region. The barrier region can comprises carbon and has a thickness, where the thickness of the barrier region determines a depth of an emitter-junction of the heterojunction bipolar transistor. An increase in the thickness of the barrier region can cause a decrease in the depth of the emitter-base junction. According to this exemplary embodiment, the heterojunction bipolar transistor further includes an emitter situated over the cap layer, where the emitter comprises an emitter dopant, which can be phosphorus. A diffusion retardant in the barrier region of the cap layer impedes diffusion of the emitter dopant.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括位于衬底上的基极。 例如，异质结双极晶体管可以是NPN硅 - 锗异质结双极晶体管。 异质结双极晶体管还包括位于基底上的覆盖层，其中覆盖层包括阻挡区。 阻挡区域可以包括碳并且具有厚度，其中阻挡区域的厚度确定异质结双极晶体管的发射极结的深度。 阻挡区域的厚度的增加可能导致发射极 - 基极结的深度减小。 根据该示例性实施例，异质结双极晶体管还包括位于覆盖层上方的发射极，其中发射极包括发射极掺杂剂，其可以是磷。 盖层的阻挡区域中的扩散阻挡剂阻止发射体掺杂剂的扩散。

公开(公告)号：US06893931B1

公开(公告)日：2005-05-17

申请号：US10290955

申请日：2002-11-07

Applicant: David Howard ,  Marco Racanelli ,  Greg D. U'Ren

Inventor： David Howard ,  Marco Racanelli ,  Greg D. U'Ren

IPC: H01L21/331

CPC classification number: H01L29/66287 ,  H01L29/66242

Abstract: A method for fabricating an NPN bipolar transistor comprises forming a base layer on a top surface of a substrate. The NPN bipolar transistor may be an NPN silicon-germanium heterojunction bipolar transistor. The method for fabricating the NPN bipolar transistor may further comprise a cap layer situated over the base layer. According to this embodiment, the method for fabricating the NPN bipolar transistor further comprises fabricating an emitter over the base layer, where the emitter defines an intrinsic and an extrinsic base region of the base layer. The emitter may comprise, for example, polycrystalline silicon. The method for fabricating the NPN bipolar transistor further comprises implanting germanium in the extrinsic base region of the base layer so as to make the extrinsic base region substantially amorphous. The method for fabricating the NPN bipolar transistor further comprises implanting boron in the extrinsic base region of the base layer.

Abstract translation: 一种用于制造NPN双极晶体管的方法，包括在衬底的顶表面上形成基层。 NPN双极晶体管可以是NPN硅 - 锗异质结双极晶体管。 制造NPN双极晶体管的方法还可以包括位于基极层之上的覆盖层。 根据该实施例，用于制造NPN双极晶体管的方法还包括在基极层上制造发射极，其中发射极限定基极层的本征和非本征基极区域。 发射极可以包括例如多晶硅。 制造NPN双极晶体管的方法还包括将锗掺杂在基层的外部基极区域中，以使外部基极区域基本上无定形。 用于制造NPN双极晶体管的方法还包括在基层的外部基极区域中注入硼。

公开(公告)号：US06680235B1

公开(公告)日：2004-01-20

申请号：US10302308

申请日：2002-11-22

Applicant: Greg D. U'Ren ,  Marco Racanelli ,  Klaus F. Schuegraf

Inventor： Greg D. U'Ren ,  Marco Racanelli ,  Klaus F. Schuegraf

IPC: H01L218222

CPC classification number: H01L29/66242 ,  H01L29/0817 ,  H01L29/7378

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example, the epitaxial emitter may be N-type single-crystal silicon. The heterojunction bipolar transistor further comprises an etch stop layer situated on the top surface of the base, where the etch stop layer is in contact with the epitaxial emitter. The heterojunction bipolar transistor further comprises a first spacer and a second spacer situated on the etch stop layer, where the epitaxial emitter is situated between the first and second spacer. The first spacer and the second spacer, for example, may be LPCVD silicon nitride. The heterojunction bipolar transistor further comprises a dielectric layer deposited on the first and second spacers. The heterojunction bipolar transistor further comprises an antireflective coating layer deposited over the dielectric layer.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括具有顶表面的基极。 异质结双极晶体管还包括选择性地位于基底的顶表面上的外延发射体。 例如，外延发射极可以是N型单晶硅。 异质结双极晶体管还包括位于基底顶表面上的蚀刻停止层，其中蚀刻停止层与外延发射体接触。 异质结双极晶体管还包括位于蚀刻停止层上的第一间隔物和第二间隔物，其中外延发射体位于第一和第二间隔物之间​​。 例如，第一间隔物和第二间隔物可以是LPCVD氮化硅。 异质结双极晶体管还包括沉积在第一和第二间隔物上的电介质层。 异质结双极晶体管还包括沉积在电介质层上的抗反射涂层。

公开(公告)号：US06617619B1

公开(公告)日：2003-09-09

申请号：US10067034

申请日：2002-02-04

Applicant: Greg D. U'Ren ,  Marco Racanelli ,  Klaus F. Schuegraf

Inventor： Greg D. U'Ren ,  Marco Racanelli ,  Klaus F. Schuegraf

IPC: H01L310328

CPC classification number: H01L29/66242 ,  H01L29/0817 ,  H01L29/7378

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example, the epitaxial emitter may be N-type single-crystal silicon. The heterojunction bipolar transistor further comprises an etch stop layer situated on the top surface of the base, where the etch stop layer is in contact with the epitaxial emitter. The heterojunction bipolar transistor further comprises a first spacer and a second spacer situated on the etch stop layer, where the epitaxial emitter is situated between the first and second spacer. The first spacer and the second spacer, for example, may be LPCVD silicon nitride. The heterojunction bipolar transistor further comprises a dielectric layer deposited on the first and second spacers. The heterojunction bipolar transistor further comprises an antireflective coating layer deposited over the dielectric layer.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括具有顶表面的基极。 异质结双极晶体管还包括选择性地位于基底的顶表面上的外延发射体。 例如，外延发射极可以是N型单晶硅。 异质结双极晶体管还包括位于基底顶表面上的蚀刻停止层，其中蚀刻停止层与外延发射体接触。 异质结双极晶体管还包括位于蚀刻停止层上的第一间隔物和第二间隔物，其中外延发射体位于第一和第二间隔物之间​​。 例如，第一间隔物和第二间隔物可以是LPCVD氮化硅。 异质结双极晶体管还包括沉积在第一和第二间隔物上的电介质层。 异质结双极晶体管还包括沉积在电介质层上的抗反射涂层。

公开(公告)号：US06830982B1

公开(公告)日：2004-12-14

申请号：US10290976

申请日：2002-11-07

Applicant: David Howard ,  Marco Racanelli ,  Greg D. U'Ren

Inventor： David Howard ,  Marco Racanelli ,  Greg D. U'Ren

IPC: H01L21331

CPC classification number: H01L29/66287 ,  H01L21/8249 ,  H01L29/1004 ,  H01L29/167 ,  H01L29/66242 ,  H01L29/66272

Abstract: According to one exemplary embodiment, an NPN bipolar transistor comprises a base layer situated over a collector, where the base layer comprises an intrinsic base region and an extrinsic base region. The NPN bipolar transistor may be, for example, an NPN silicon-germanium heterojunction bipolar transistor. The base layer can be, for example, silicon-germanium. According to this exemplary embodiment, the NPN bipolar transistor further comprises a cap layer situated over the base layer, where a portion of the cap layer is situated over the extrinsic base region, and where the portion of the cap layer situated over the extrinsic base region comprises an indium dopant. The cap layer may be, for example, polycrystalline silicon. According to this exemplary embodiment, the NPN bipolar transistor may further comprise an emitter situated over the intrinsic base region. The emitter may be, for example, polycrystalline silicon.

Abstract translation: 根据一个示例性实施例，NPN双极晶体管包括位于集电极上方的基极层，其中基极层包含本征基极区域和外部基极区域。 NPN双极晶体管可以是例如NPN硅 - 锗异质结双极晶体管。 基层可以是例如硅 - 锗。 根据该示例性实施例，NPN双极晶体管还包括位于基极层之上的覆盖层，其中覆盖层的一部分位于外部本体区域之上，并且其中覆盖层的位于外部基极区域之上的部分 包括铟掺杂剂。 盖层可以是例如多晶硅。 根据该示例性实施例，NPN双极晶体管还可以包括位于本征基极区域上方的发射极。 发射极可以是例如多晶硅。

公开(公告)号：US06781214B1

公开(公告)日：2004-08-24

申请号：US10313508

申请日：2002-12-06

Applicant: Greg D. U'Ren ,  Klaus F. Schuegraf

Inventor： Greg D. U'Ren ,  Klaus F. Schuegraf

IPC: H01L27082

CPC classification number: H01L29/66242 ,  H01L21/8249 ,  H01L29/7378

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor is fabricated by forming a metastable epitaxial silicon-germaniuim base on a collector. The metastable epitaxial silicon-germanium base, for example, may have a concentration of germanium greater than 20.0 atomic percent of germanium. The heterojunction bipolar transistor, for example, may be an NPN silicon-germanium heterojunction bipolar transistor. According to this exemplary embodiment, the heterojunction bipolar transistor is further fabricated by fabricating an emitter over the metastable epitaxial silicon-germanium base. The heterojunction bipolar transistor is further fabricated by doping the emitter with a first dopant. The first dopant, for example, may be arsenic. The heterojunction bipolar transistor is further fabricated by heating the metastable epitaxial silicon-germanium base in a spike anneal process so as to maintain the metastable epitaxial silicon-germanium base as a strained crystalline structure after the spike anneal process and so as to diffusion the first dopant to form emitter-base junction.

Abstract translation: 根据一个示例性实施例，通过在集电极上形成亚稳态外延硅 - 锗化物基底来制造异质结双极晶体管。 例如，亚稳态外延硅 - 锗基底可以具有大于锗原子％的锗的浓度。 例如，异质结双极晶体管可以是NPN硅 - 锗异质结双极晶体管。 根据该示例性实施例，通过在亚稳态外延硅 - 锗基底上制造发射极来进一步制造异质结双极晶体管。 通过用第一掺杂剂掺杂发射极进一步制造异质结双极晶体管。 例如，第一掺杂剂可以是砷。 异质结双极晶体管通过在尖峰退火工艺中加热亚稳外延硅 - 锗基底进一步制造，以便在尖峰退火工艺之后将亚稳态外延硅 - 锗基底保持为应变结晶结构，并使第一掺杂剂 以形成发射极 - 基极结。

公开(公告)号：US06759674B2

公开(公告)日：2004-07-06

申请号：US10066871

申请日：2002-02-04

Applicant: Greg D. U'Ren ,  Klaus F. Schuegraf ,  Marco Racanelli

Inventor： Greg D. U'Ren ,  Klaus F. Schuegraf ,  Marco Racanelli

IPC: H01L2906

CPC classification number: H01L29/66242 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/167 ,  H01L29/7378

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of a first material at a first depth, where the first material impedes the diffusion of a base dopant. The first material also causes a change in band gap at the first depth in the base. According to this exemplary embodiment, the base further includes a concentration of a second material, where the concentration of second material increases at the first depth so as to counteract the change in band gap.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括在第一深度处具有第一材料的浓度的基底，其中第一材料阻止基底掺杂剂的扩散。 第一种材料还导致基底中第一深度处的带隙的变化。 根据该示例性实施例，基底还包括第二材料的浓度，其中第二材料的浓度在第一深度增加以抵消带隙的变化。

公开(公告)号：US06639256B2

公开(公告)日：2003-10-28

申请号：US10066872

申请日：2002-02-04

Applicant: Greg D. U'Ren ,  Klaus F. Schuegraf ,  Marco Racanelli

Inventor： Greg D. U'Ren ,  Klaus F. Schuegraf ,  Marco Racanelli

IPC: H01L310328

CPC classification number: H01L29/66242 ,  H01L29/1004 ,  H01L29/7378

Abstract: According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exemplary embodiment, the base of the heterojunction bipolar transistor further comprises a concentration of a diffusion suppressant of a base dopant, where the concentration of the diffusion suppressant decreases between a third depth and a fourth depth so as to counteract a change in band gap in the base between the first depth and the second depth. For example, the diffusion suppressant can be carbon and the base dopant can be boron. For example, the concentration of diffusion suppressant may decrease between the third depth and fourth depth so as to counteract the change in band gap at approximately the second depth.

Abstract translation: 根据一个示例性实施例，异质结双极晶体管包括具有锗浓度的基底，其中锗的浓度在基底中的第一深度和第二深度之间降低。 根据该示例性实施例，异质结双极晶体管的基极还包括基极掺杂剂的扩散抑制剂的浓度，其中扩散抑制剂的浓度在第三深度和第四深度之间减小以抵消带的变化 在第一深度和第二深度之间的基座中的间隙。 例如，扩散抑制剂可以是碳，碱性掺杂剂可以是硼。 例如，扩散抑制剂的浓度可以在第三深度和第四深度之间减小，以抵消大致在第二深度处的带隙的变化。