公开(公告)号：US07260810B2

公开(公告)日：2007-08-21

申请号：US10687475

申请日：2003-10-16

申请人： Ronald G. Filippi, Jr. ,  Giovanni Fiorenza ,  Xiao Hu Liu ,  Conal Eugene Murray ,  Gregory Allen Northrop ,  Thomas M. Shaw ,  Richard Andre′ Wachnik ,  Mary Yvonne Lanzerotti Wisniewski

发明人： Ronald G. Filippi, Jr. ,  Giovanni Fiorenza ,  Xiao Hu Liu ,  Conal Eugene Murray ,  Gregory Allen Northrop ,  Thomas M. Shaw ,  Richard Andre′ Wachnik ,  Mary Yvonne Lanzerotti Wisniewski

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G06F17/5018

摘要： A method for analyzing circuit designs includes discretizing a design representation into pixel elements representative of a structure in the design and determining at least one property for each pixel element representing a portion of the design. Then, a response of the design is determined due to local properties across the design.

摘要翻译： 用于分析电路设计的方法包括将设计表示离散成代表设计中的结构的像素元素，并且为表示设计的一部分的每个像素元素确定至少一个属性。 然后，由于设计中的局部属性，确定了设计的响应。

公开(公告)号：US09059308B2

公开(公告)日：2015-06-16

申请号：US13564792

申请日：2012-08-02

申请人： Emre Alptekin ,  Gregory Allen Northrop ,  Viraj Yashawant Sardesai ,  Cung Do Tran

发明人： Emre Alptekin ,  Gregory Allen Northrop ,  Viraj Yashawant Sardesai ,  Cung Do Tran

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L21/823481 ,  H01L21/823437 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66545

摘要： Embodiments of the present invention include a semiconductor structure including two transistor structures separated by a dummy gate of a different material and methods for forming said structure. Embodiments including forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the third sacrificial gate with an insulating material. The insulating material replacing the third sacrificial gate may serve as a dummy gate to electrically isolate nearby source/drain regions. Embodiments further include forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the two sacrificial gates with metal gates while leaving the third sacrificial gate in place to serve as a dummy gate.

摘要翻译： 本发明的实施例包括由不同材料的虚拟栅极隔开的两个晶体管结构的半导体结构和用于形成所述结构的方法。 实施例包括在半导体衬底上形成牺牲栅极，在牺牲栅上形成间隔物，形成与由第三牺牲栅极隔开的两个牺牲栅极相邻的源/漏区，以及用绝缘材料代替第三牺牲栅。 替代第三牺牲栅极的绝缘材料可以用作虚拟栅极以电隔离附近的源极/漏极区域。 实施例还包括在半导体衬底上形成牺牲栅极，在牺牲栅极上形成间隔物，形成与由第三牺牲栅极隔开的两个牺牲栅极相邻的源极/漏极区域，并且在离开第三牺牲栅极的同时用金属栅极替换两个牺牲栅极 到位作为虚拟门。

公开(公告)号：US20140035045A1

公开(公告)日：2014-02-06

申请号：US13564792

申请日：2012-08-02

申请人： Emre Alptekin ,  Gregory Allen Northrop ,  Viraj Yashawant Sardesai ,  Cung Do Tran

发明人： Emre Alptekin ,  Gregory Allen Northrop ,  Viraj Yashawant Sardesai ,  Cung Do Tran

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L21/823481 ,  H01L21/823437 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66545

摘要： Embodiments of the present invention include a semiconductor structure including two transistor structures separated by a dummy gate of a different material and methods for forming said structure. Embodiments including forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the third sacrificial gate with an insulating material. The insulating material replacing the third sacrificial gate may serve as a dummy gate to electrically isolate nearby source/drain regions. Embodiments further include forming sacrificial gates on a semiconductor substrate, forming spacers on the sacrificial gates, forming source/drain regions adjacent to two sacrificial gates separated by a third sacrificial gate, and replacing the two sacrificial gates with metal gates while leaving the third sacrificial gate in place to serve as a dummy gate.

摘要翻译： 本发明的实施例包括由不同材料的虚拟栅极隔开的两个晶体管结构的半导体结构和用于形成所述结构的方法。 实施例包括在半导体衬底上形成牺牲栅极，在牺牲栅上形成间隔物，形成与由第三牺牲栅极隔开的两个牺牲栅极相邻的源/漏区，以及用绝缘材料代替第三牺牲栅。 替代第三牺牲栅极的绝缘材料可以用作虚拟栅极以电隔离附近的源极/漏极区域。 实施例还包括在半导体衬底上形成牺牲栅极，在牺牲栅极上形成间隔物，形成与由第三牺牲栅极隔开的两个牺牲栅极相邻的源极/漏极区域，并且在离开第三牺牲栅极的同时用金属栅极替换两个牺牲栅极 到位作为虚拟门。