公开(公告)号：US5168166A

公开(公告)日：1992-12-01

申请号：US708395

申请日：1991-05-31

申请人： Hajime Hayakawa ,  Kazumitsu Nakamura ,  Hiroyuki Itoh

发明人： Hajime Hayakawa ,  Kazumitsu Nakamura ,  Hiroyuki Itoh

IPC分类号： G21K5/00 ,  G02B21/00 ,  G03F7/20 ,  G21K5/04 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/228 ,  G02B21/002 ,  H01J37/3045 ,  H01J2237/2482

摘要： A charged particle beam projection aligner comprising a particle beam source for irradiating a particle beam, a sectional shape forming device thereof, an electron lens and a deflector, a wafer mounted on a XY table and a vacuum column in which these devices are installed, further comprising an optical device which irradiates a light beam in the same direction as an irradiating direction of the particle beam, a detector for detecting a light beam reflected from alignment marks on the wafer by irradiating the light beam, and for detecting a reflected light beam and a reflected electron beam reflected from a fiducial mark on the XY table by irradiating the light beam and the particle beam, and a computer for memorizing lithographic patterns, correcting said lithographic patterns with signals from the detector and outputting the corrected lithographic patterns to the electron lens and the deflector so as to control them. Since the light beam is irradiated on the wafer in the same direction as the direction of the particle beam, an offset error of the pattern alignment is minimized.

摘要翻译： 一种带电粒子束投影对准器，包括用于照射粒子束的粒子束源，其截面形状形成装置，电子透镜和偏转器，安装在XY台上的晶片和安装这些装置的真空柱 包括照射与所述粒子束的照射方向相同的方向的光束的光学装置，用于通过照射所述光束来检测从所述晶片上的对准标记反射的光束的检测器，以及用于检测反射光束 通过照射光束和粒子束从XY台上的基准标记反射的反射电子束和用于记忆光刻图案的计算机，用来自检测器的信号校正所述光刻图案，并将校正的光刻图案输出到电子透镜 和偏转器，以便控制它们。 由于光束在与粒子束的方向相同的方向上在晶片上照射，所以图案对准的偏移误差最小化。

公开(公告)号：US5441849A

公开(公告)日：1995-08-15

申请号：US117969

申请日：1993-09-08

申请人： Hiroshi Shiraishi ,  Takumi Ueno ,  Fumio Murai ,  Hajime Hayakawa ,  Asao Isobe

发明人： Hiroshi Shiraishi ,  Takumi Ueno ,  Fumio Murai ,  Hajime Hayakawa ,  Asao Isobe

IPC分类号： G03F7/11 ,  G03F7/095 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30 ,  H05K3/00 ,  G03C5/00 ,  B44C1/22

CPC分类号： G03F7/095 ,  Y10S430/145 ,  Y10S430/168 ,  Y10S438/95

摘要： Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

摘要翻译： 通过使用包含辐射诱导的导电组合物的底部抗蚀剂层，可以减少在形成潜像图案期间由带电粒子束曝光引起的电荷积累，从而减小图案的位置偏差。 高度集成的半导体器件可以容易且高产率地制造。 通过使电荷粒子束构图装置与紫外光，X射线和红外光等的光化辐射基本上同时曝光，可以进一步降低位置偏差。