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公开(公告)号：US5500391A
公开(公告)日：1996-03-19
申请号：US287989
申请日：1994-08-09
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8238 , H01L29/10 , H01L29/161
CPC分类号： H01L29/66477 , H01L21/26506 , H01L21/823807 , H01L29/1079 , Y10S438/981
摘要： A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.
摘要翻译： 在硅衬底上制造MOS器件的工艺包括在衬底中形成锗 - 硅合金掩埋层的步骤，或者替代地，在薄富锗层之间封装硅掩埋层。 该掩埋层掺杂硼，并且倾向于在退火和氧化步骤期间限制硼。 该方法包括将衬底暴露于氧化气氛的步骤，使得在衬底上生长厚度超过-500埃的厚度的氧化物层。
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公开(公告)号：US5169798A
公开(公告)日：1992-12-08
申请号：US546128
申请日：1990-06-28
IPC分类号： H01L21/203 , H01L31/18
CPC分类号： H01L31/184 , H01L21/02381 , H01L21/02395 , H01L21/0245 , H01L21/02463 , H01L21/02532 , H01L21/02546 , H01L21/02573 , H01L21/02631 , H01L31/1804 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a method of making a semiconductor device that comprises MBE at substrate temperatures substantially lower than conventionally used temperatures. A significant aspect of the method is the ability to produce highly doped (e.g., 10.sup.19 cm.sup.-3) epitaxial single crystal Si layers. The deposition can be carried out such that substantially all (at least 90%) dopant atoms are electrically active at 20.degree. C. However, the method is not limited to Si MBE. Exemplarily, the method can be used to produce epitaxial single crystal GaAs having very short (e.g.,
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