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公开(公告)号：US08547158B2
公开(公告)日：2013-10-01
申请号：US13063001
申请日：2009-08-28
IPC分类号： G06G7/12
CPC分类号： H03D7/125 , H03D1/18 , H03D9/0675 , H03D2200/0074
摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要翻译： 本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。 根据现有技术，高频信号通过电容器CGD耦合到栅极G中，并且通过电容器CGD耦合到场效应晶体管FET的漏极D中，栅极G被直接电压Vg偏置，直流电压Vg对应于 FET晶体管。 源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。 所述功率检测器的工作频率通过离散布置限制在几千兆赫兹（GHz），特别是场效应晶体管的预定栅极长度。 本发明的目的是改进电阻式混频器，使得它可以在高千兆赫兹和太赫兹频率下工作。 为此，电阻式混合器包括具有第一和第二电导体的线，其具有相应的连接触点，使得电气高频信号可以耦合到线路中，第一导体具有多个串联连接的电压依赖性 电阻元件（R）和至少一个电容元件（C）插入在第一和第二导体之间。
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公开(公告)号：US20110254610A1
公开(公告)日：2011-10-20
申请号：US13063001
申请日：2009-08-28
IPC分类号： G06G7/16
CPC分类号： H03D7/125 , H03D1/18 , H03D9/0675 , H03D2200/0074
摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
摘要翻译： 本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。 根据现有技术，高频信号通过电容器CGD耦合到栅极G中，并且通过电容器CGD耦合到场效应晶体管FET的漏极D中，栅极G被直接电压Vg偏置，直流电压Vg对应于 FET晶体管。 源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。 所述功率检测器的工作频率通过离散布置限制在几千兆赫兹（GHz），特别是场效应晶体管的预定栅极长度。 本发明的目的是改进电阻式混频器，使得它可以在高千兆赫兹和太赫兹频率下工作。 为此，电阻式混合器包括具有第一和第二电导体的线，其具有相应的连接触点，使得电气高频信号可以耦合到线路中，第一导体具有多个串联连接的电压依赖性 电阻元件（R）和至少一个电容元件（C）插入在第一和第二导体之间。
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公开(公告)号：US20140145778A1
公开(公告)日：2014-05-29
申请号：US13697824
申请日：2011-05-13
IPC分类号： H03D7/12
CPC分类号： H03D7/125
摘要： A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
摘要翻译： 子谐波电子混合器具有至少一个具有栅极，源极和漏极的场效应晶体管（FET）; 并在有用的频率输入有用的信号; 和本地振荡器输入。 该输入以与有用频率成正比的频率接收振荡器信号，加或减一个混频以提供信号输出。 FET和/或漏极和/或源极的栅极接收有用信号以产生栅极 - 源极电压和/或漏极 - 源极电压，由此栅极接收本地振荡器信号以产生栅极 - 源极电压， 并且漏极或源接收本地振荡器信号以产生漏极 - 源极电压。 在栅极接收的信号和在FET的漏极或源极处接收的信号之间引入相移。
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4.发明授权Monolithically integrated antenna and receiver circuit for the detection of terahertz waves 有权用于检测太赫兹波的单片集成天线和接收器电路公开(公告)号：US08330111B2
公开(公告)日：2012-12-11
申请号：US12810031
申请日：2008-12-12
IPC分类号： G01J5/02
CPC分类号： H01L23/66 , H01L27/0203 , H01L27/088 , H01L2223/6677 , H01L2924/0002 , H01L2924/3011 , H01Q1/2283 , H01Q9/285 , H03F1/22 , H03F3/45282 , H03F3/601 , H03F2200/294 , H03F2203/45024 , H01L2924/00
摘要： The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.
摘要翻译： 本发明涉及一种用于检测毫米波的装置，其具有至少一个具有源极，漏极，栅极，栅极 - 源极接触，源极 - 漏极沟道和栅极 - 漏极接触的场效应晶体管。 与类似的这种装置相比，本发明解决的问题尤其在于提供一种能够提供用于检测Thz频率范围内的电磁辐射的功率和/或相位的场效应晶体管的装置。 为了制造这样的装置，根据本发明，提出了一种具有天线结构的装置，其中场效应晶体管以天线结构接收的电磁信号连接到天线结构 在THz范围内经由栅极 - 源极接触馈入场效应晶体管，并且其中场效应晶体管和天线结构一起布置在单个衬底上。
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5.发明申请DEVICE AND METHOD FOR GENERATING AND DETECTING COHERENT ELECTROMAGNETIC RADIATION IN THE THz FREQUENCY RANGE 有权用于在太赫兹频率范围内产生和检测相关电磁辐射的装置和方法公开(公告)号：US20100213375A1
公开(公告)日：2010-08-26
申请号：US12602291
申请日：2008-05-21
IPC分类号： G01J5/02
CPC分类号： G02F1/39 , G01J3/10 , G01J3/42 , G01N21/3581 , G02F2202/12 , G02F2203/13
摘要： The present invention relates to a device for generating and detecting coherent electromagnetic radiation (8) in the THz frequency range, comprising an optically parametric oscillator (2) for generating electromagnetic radiation in the THz frequency range (8). In order to provide a device for generating and detecting electromagnetic radiation in the THz frequency range, according to the invention the device comprises a coherent phase-sensitive detector (3, 21) for detecting the intensity and phase of the electromagnetic radiation generated by the optically parametric oscillator (2).
摘要翻译： 本发明涉及一种用于产生和检测太赫兹频率范围内的相干电磁辐射（8）的装置，包括用于在太赫兹频率范围（8）产生电磁辐射的光学参数振荡器（2）。 为了提供用于在THz频率范围内产生和检测电磁辐射的装置，根据本发明，装置包括一个相干相敏检测器（3,21），用于检测光学产生的电磁辐射的强度和相位 参数振荡器（2）。
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6.发明申请Monolithically Integrated Antenna and Receiver Circuit for the Detection of Terahertz Waves 有权用于检测太赫兹波的单片集成天线和接收器电路公开(公告)号：US20110001173A1
公开(公告)日：2011-01-06
申请号：US12810031
申请日：2008-12-12
IPC分类号： H01L31/112
CPC分类号： H01L23/66 , H01L27/0203 , H01L27/088 , H01L2223/6677 , H01L2924/0002 , H01L2924/3011 , H01Q1/2283 , H01Q9/285 , H03F1/22 , H03F3/45282 , H03F3/601 , H03F2200/294 , H03F2203/45024 , H01L2924/00
摘要： The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.
摘要翻译： 本发明涉及一种用于检测毫米波的装置，其具有至少一个具有源极，漏极，栅极，栅极 - 源极接触，源极 - 漏极沟道和栅极 - 漏极接触的场效应晶体管。 与类似的这种装置相比，本发明解决的问题尤其在于提供一种能够提供用于检测Thz频率范围内的电磁辐射的功率和/或相位的场效应晶体管的装置。 为了制造这样的装置，根据本发明，提出了一种具有天线结构的装置，其中场效应晶体管以天线结构接收的电磁信号连接到天线结构 在THz范围内经由栅极 - 源极接触馈入场效应晶体管，并且其中场效应晶体管和天线结构一起布置在单个衬底上。
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公开(公告)号：US09190956B2
公开(公告)日：2015-11-17
申请号：US13697824
申请日：2011-05-13
CPC分类号： H03D7/125
摘要： A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
摘要翻译： 子谐波电子混合器具有至少一个具有栅极，源极和漏极的场效应晶体管（FET）; 并在有用的频率输入有用的信号; 和本地振荡器输入。 该输入以与有用频率成正比的频率接收振荡器信号，加或减一个混频以提供信号输出。 FET和/或漏极和/或源极的栅极接收有用信号以产生栅极 - 源极电压和/或漏极 - 源极电压，由此栅极接收本地振荡器信号以产生栅极 - 源极电压， 并且漏极或源接收本地振荡器信号以产生漏极 - 源极电压。 在栅极接收的信号和在FET的漏极或源极处接收的信号之间引入相移。
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8.发明授权Device and method for generating and detecting coherent electromagnetic radiation in the THz frequency range 有权用于在THz频率范围内产生和检测相干电磁辐射的装置和方法公开(公告)号：US08350240B2
公开(公告)日：2013-01-08
申请号：US12602291
申请日：2008-05-21
IPC分类号： G01J3/10
CPC分类号： G02F1/39 , G01J3/10 , G01J3/42 , G01N21/3581 , G02F2202/12 , G02F2203/13
摘要： The present invention concerns a device for generating and detecting coherent electromagnetic radiation (8) in the THz frequency range, comprising an optically parametric oscillator (2) for generating electromagnetic radiation in the THz frequency range (8). To provide a device for generating and detecting electromagnetic radiation in the THz frequency range it is proposed in accordance with the invention that it has a coherent phase-sensitive detector (3, 21) for detecting intensity and phase of the electromagnetic radiation (8) generated by the optically parametric oscillator (2).
摘要翻译： 本发明涉及用于产生和检测太赫兹频率范围内的相干电磁辐射（8）的装置，包括用于在太赫兹频率范围（8）产生电磁辐射的光学参数振荡器（2）。 为了提供用于在THz频率范围内产生和检测电磁辐射的装置，根据本发明提出了一种用于检测产生的电磁辐射（8）的强度和相位的相干相敏检测器（3,21） 通过光学参数振荡器（2）。
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