Siloxane-based low dielectric constant thin films using cyclo-siloxane and a method for preparing the same
    1.
    发明授权
    Siloxane-based low dielectric constant thin films using cyclo-siloxane and a method for preparing the same 有权
    使用环硅氧烷的基于硅氧烷的低介电常数薄膜及其制备方法

    公开(公告)号:US08865852B2

    公开(公告)日:2014-10-21

    申请号:US12909554

    申请日:2010-10-21

    CPC classification number: C08L83/06 C08G77/16

    Abstract: A low-dielectric constant thin film prepared from a silsesquioxane polymer matrix as a precursor and a method for preparing the same which comprises preparing silsesquioxane sol by adding a stereoisomer of a multi reactive cyclosiloxane to an alkoxysilane are provided. The low-dielectric-constant thin film retains a stable film state even at a curing temperature of −500° C. without being decomposed, a very uniform surface property with a low surface modulus, and a superior coatability as to be coatable smoothly with no crack even with a thickness of 500 nm or larger.

    Abstract translation: 提供了由倍半硅氧烷聚合物基体作为前体制备的低介电常数薄膜及其制备方法,其包括通过将多反应性环硅氧烷的立体异构体加入到烷氧基硅烷中来制备倍半硅氧烷溶胶。 低介电常数薄膜即使在-500℃的固化温度下也保持了稳定的膜状态,而不会分解,具有非常均匀的表面性能,具有低的表面模量,以及优异的涂布性能可顺利地涂布 甚至具有500nm或更大的厚度的裂纹。

    SILOXANE-BASED LOW DIELECTRIC CONSTANT THIN FILMS USING CYCLO-SILOXANE AND A METHOD FOR PREPARING THE SAME
    2.
    发明申请
    SILOXANE-BASED LOW DIELECTRIC CONSTANT THIN FILMS USING CYCLO-SILOXANE AND A METHOD FOR PREPARING THE SAME 有权
    使用环硅氧烷的基于硅氧烷的低介电常数薄膜及其制备方法

    公开(公告)号:US20120004368A1

    公开(公告)日:2012-01-05

    申请号:US12909554

    申请日:2010-10-21

    CPC classification number: C08L83/06 C08G77/16

    Abstract: Disclosed are a low-dielectric-constant thin film prepared from a silsesquioxane polymer matrix as a precursor, the silsesquioxane polymer matrix being a silsesquioxane sol prepared by adding a stereoisomer of a multireactive cyclosiloxane to an alkoxysilane, and a method for preparing the same.The disclosed low-dielectric-constant thin film retains a stable film state even at a curing temperature of ˜500° C. without being decomposed. Also, it exhibits a very uniform surface property with a low surface modulus and has such a superior coatability as to be coatable smoothly with no crack even with a thickness of 500 nm or larger. In addition, the low-dielectric-constant thin film according to the present disclosure may exhibit low dielectric property while having superior surface modulus and hardness.

    Abstract translation: 公开了由倍半硅氧烷聚合物基质作为前体制备的低介电常数薄膜,其倍半硅氧烷聚合物基体是通过将多官能环硅氧烷的立体异构体加入到烷氧基硅烷中制备的倍半硅氧烷溶胶及其制备方法。 所公开的低介电常数薄膜即使在约500℃的固化温度下仍保持稳定的膜状态而不分解。 此外,它具有非常均匀的表面性能,具有低的表面模量,并且具有如此优异的涂布性,即使在500nm或更大的厚度下也能平滑地涂布,没有裂纹。 此外,根据本公开的低介电常数薄膜可以表现出低介电性能,同时具有优异的表面模量和硬度。

    COMPOSITION COMPRISING A MONOMER FOR POLYMERIZING BRANCH-TYPE SILSESQUIOXANE POLYMER, BRANCH-TYPE SILSESQUIOXANE POLYMER SYNTHESIZED FROM THE SAME AND A METHOD FOR SYNTHESIZING THE SAME
    7.
    发明申请
    COMPOSITION COMPRISING A MONOMER FOR POLYMERIZING BRANCH-TYPE SILSESQUIOXANE POLYMER, BRANCH-TYPE SILSESQUIOXANE POLYMER SYNTHESIZED FROM THE SAME AND A METHOD FOR SYNTHESIZING THE SAME 有权
    用于聚合分支型硅烷聚合物的单体的组合物,从其合成的分支型硅烷基聚合物及其合成方法

    公开(公告)号:US20130165617A1

    公开(公告)日:2013-06-27

    申请号:US13820298

    申请日:2011-09-16

    CPC classification number: C08G77/04 C07F7/21 C08G77/045 C08G77/16 C08L83/04

    Abstract: A monomer composition for polymerizing a branch-type silsesquioxane polymer is disclosed. The monomer composition includes hydroxy-substituted cyclic siloxane in a solvent, and the hydroxy-substituted cyclic siloxane includes stereoisomers of cyclic siloxane of cis, trans, random and twist structures at controlled ratios. Also disclosed are a branch-type silsesquioxane polymer synthesized by polymerizing the monomer composition for polymerizing a branch-type silsesquioxane polymer, and a method for synthesizing the same. In accordance with the disclosure, the isomers can be isolated stably at desired ratios. The isolated isomers may be polymerized into polymers of various types. Since the polymers exhibit low dielectric property, they may be utilized as low dielectric materials.

    Abstract translation: 公开了用于聚合支化型倍半硅氧烷聚合物的单体组合物。 单体组合物在溶剂中包括羟基取代的环状硅氧烷,羟基取代的环状硅氧烷包括顺式,反式,无规和扭曲结构的环状硅氧烷的立体异构体,其受控比例。 还公开了通过使用于聚合支化型倍半硅氧烷聚合物的单体组合物聚合而合成的分支型倍半硅氧烷聚合物及其合成方法。 根据本公开内容,可以以期望的比例稳定地分离异构体。 分离的异构体可以聚合成各种类型的聚合物。 由于聚合物表现出低介电性能,因此它们可以用作低电介质材料。

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