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    Electronic Device With Stress Relief Element
    1.
    发明申请
    Electronic Device With Stress Relief Element 审中-公开
    具有应力释放元件的电子装置

    公开(公告)号：US20080251907A1

    公开(公告)日：2008-10-16

    申请号：US10591356

    申请日：2005-03-03

    申请人： Soenke Habenicht ,  Ansgar Thorns ,  Heinrich Zeile

    发明人： Soenke Habenicht ,  Ansgar Thorns ,  Heinrich Zeile

    IPC分类号： H01L23/04

    CPC分类号： H01L23/3171 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

    摘要： The present invention relates to an electronic device whose component body contains at least one stress relief element (4), a substrate (1) with an upper surface and side walls at least one circuit element (2) located on said substrate (1) and at least one passivation and/or isolating layer (3) placed on said substrate (1), whereby said isolating layer (3) covers said at least one circuit element (2) and/or said substrate (1) and contains a top surface, at least one outer side surface which is located towards a side wall of said substrate and at least one outer edge, which is formed by said top surface and said at least one outer side surface, characterized in that at least one stress relief element (4) is made out of a ductile material and simultaneously a) covers the top surface of said passivation and/or isolating layer (3); and b) overlaps said outer edge of said passivation and/or isolating layer (3); and c) extends along said outer surface of said passivation and/or isolating layer (3); and d1) contacts the upper surface of the substrate (1) or d2) forms a bridge with at least one circuit element (2) in that way that the stress relief element is linked with the upper surface of the substrate (1) via at least one circuit element (2).

    摘要翻译： 本发明涉及一种电子设备，其组件主体包括至少一个应力消除元件（4），具有上表面的基板（1）和位于所述基板（1）上的至少一个电路元件（2）的侧壁，以及 至少一个放置在所述衬底（1）上的钝化和/或隔离层（3），由此所述绝缘层（3）覆盖所述至少一个电路元件（2）和/或所述衬底（1）并且包含顶表面 至少一个外侧表面，其位于所述基底的侧壁和由所述顶表面和所述至少一个外侧表面形成的至少一个外边缘，其特征在于，至少一个应力释放元件 4）由延性材料制成，同时a）覆盖所述钝化和/或隔离层（3）的顶表面; 和b）与所述钝化和/或隔离层（3）的所述外边缘重叠; 和c）沿着所述钝化和/或隔离层（3）的所述外表面延伸; 和d1）接触基板（1）的上表面或d2）形成具有至少一个电路元件（2）的桥，使得应力释放元件经由基板（1）的上表面经由 至少一个电路元件（2）。

    Semiconductor temperature sensor
    4.
    发明授权
    Semiconductor temperature sensor 失效
    半导体温度传感器

    公开(公告)号：US4670731A

    公开(公告)日：1987-06-02

    申请号：US766178

    申请日：1985-08-16

    申请人： Heinrich Zeile ,  Hartmut Witt

    发明人： Heinrich Zeile ,  Hartmut Witt

    IPC分类号： G01K7/00 ,  G01K7/01 ,  G01K7/22 ,  H01L35/00 ,  H01C7/10

    CPC分类号： G01K7/01 ,  G01K7/223

    摘要： A temperature sensor in the form of a temperature-dependent semiconductor resistor operating according to the current-spreading principle includes a semiconductor body of one conductivity type of silicon, which is provided on its lower side with a conductive layer and is provided on its upper side with at least one contact zone of the one conductivity type. The upper side is coated with a silicon oxide layer or a silicon nitride layer. In order for the given resistance value to be maintained more accurately and the temperature coefficient to have only a small spread, the semiconductor body is provided at its surface adjacent the silicon oxide layer or silicon nitride layer with a surface zone of the opposite conductivity type. Thus, it is possible to limit to a minimum value or to completely compensate for the influence of charges at the silicon oxide layer or silicon nitride layer.

    摘要翻译： 根据电流扩展原理工作的温度依赖性半导体电阻器形式的温度传感器包括一个导电类型的硅的半导体本体，其在其下侧设置有导电层，并且设置在其上侧 具有至少一个导电类型的接触区。 上侧涂覆有氧化硅层或氮化硅层。 为了使给定的电阻值更精确地保持并且温度系数仅具有较小的扩展，半导体本体在与氧化硅层或氮化硅层相邻的表面处设置有具有相反导电类型的表面区域。 因此，可以将其限制在最小值或完全补偿氧化硅层或氮化硅层上的电荷的影响。