公开(公告)号：US08692292B2

公开(公告)日：2014-04-08

申请号：US13356156

申请日：2012-01-23

申请人： Hidekazu Umeda ,  Tetsuzo Ueda

发明人： Hidekazu Umeda ,  Tetsuzo Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.

摘要翻译： 半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

公开(公告)号：US20080213158A1

公开(公告)日：2008-09-04

申请号：US12082745

申请日：2008-04-14

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B23/00 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

公开(公告)号：US07092391B2

公开(公告)日：2006-08-15

申请号：US10082223

申请日：2002-02-26

申请人： Hidekazu Umeda

发明人： Hidekazu Umeda

IPC分类号： H04L12/56

CPC分类号： H04L45/02 ,  H04L45/26 ,  H04L45/34 ,  H04W40/248 ,  H04W40/30 ,  H04W88/04 ,  H04W92/18

摘要： The present invention is a method for performing multi-hop peer-to-peer telecommunications on a wireless network, the topology of which changes moment by moment and which includes a plurality of radio terminals. The present invention makes possible correct routing control even on a network with severe topology changes.The present invention comprises the following steps:each radio terminal exchanges the link state with radio terminals capable of direct communication (this link state includes only information on radio terminals within a predetermined number of hops), and constructs a routing table;a packet is prepared including the routing stack for storing intermediate routing information whenever the packet passes through the terminals;the sender terminal designates a destination terminal and broadcasts the abovementioned packet;the radio terminals on the route, which receive the packet, write the intermediate routing information to the routing stack while transferring the packet to all radio terminals based on the routing table;the destination terminal which receives said packet returns said packet to said sender terminal through the route followed by said packet based on information in said routing stack; andsaid sender terminal which receives said packet unicasts a message to said destination terminal through the radio terminals on said route based on information in said routing stack included in said packet.

公开(公告)号：US08872227B2

公开(公告)日：2014-10-28

申请号：US13402631

申请日：2012-02-22

申请人： Hidekazu Umeda ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu Umeda ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/20

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

摘要翻译： 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

公开(公告)号：US08569797B2

公开(公告)日：2013-10-29

申请号：US13185818

申请日：2011-07-19

申请人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda

发明人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda

IPC分类号： H01L29/80

CPC分类号： H01L29/7783 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.

摘要翻译： 场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。 第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。 第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含 地区。 第二半导体层包括位于第一区域正上方的第二区域。 第二区域的非导电性杂质的浓度低于第一区域的浓度。

公开(公告)号：US20120119261A1

公开(公告)日：2012-05-17

申请号：US13356156

申请日：2012-01-23

申请人： Hidekazu UMEDA ,  Tetsuzo Ueda

发明人： Hidekazu UMEDA ,  Tetsuzo Ueda

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.

摘要翻译： 半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

公开(公告)号：US07959729B2

公开(公告)日：2011-06-14

申请号：US10549494

申请日：2004-03-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

IPC分类号： C30B9/12

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

摘要翻译： 提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。 制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素 由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌 通过摇动反应容器。

公开(公告)号：US20060169197A1

公开(公告)日：2006-08-03

申请号：US10549494

申请日：2004-03-15

申请人： Takatamo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

发明人： Takatamo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

IPC分类号： H01L21/322

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

摘要翻译： 提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。 制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素 由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌 通过摇动反应容器。

公开(公告)号：US20110012173A1

公开(公告)日：2011-01-20

申请号：US12867427

申请日：2009-01-23

申请人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/12

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462

摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).

摘要翻译： 半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107） 浓度p型GaN层（106）。 在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域 在n型AlGaN层（107）中。

公开(公告)号：US07381268B2

公开(公告)日：2008-06-03

申请号：US10587223

申请日：2005-04-27

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.