-
公开(公告)号：US20100068867A1
公开(公告)日：2010-03-18
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过在具有指定晶片面的有源层硅晶片上的氧离子注入步骤的方法制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
-
公开(公告)号：US08003494B2
公开(公告)日：2011-08-23
申请号：US12676874
申请日：2008-08-06
IPC分类号： H01L21/46
CPC分类号： H01L21/26533 , H01L21/76243 , H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
摘要翻译： 在通过粘合用于有源层的晶片和用于支撑层的晶片并且使根据本发明的有源层的晶片变薄的方法来制造接合晶片的方法中，在保持温度的状态下将氧离子注入用于有源层的晶片 的活性层的晶片在5×10 15〜5×10 16原子/ cm 2的剂量下在200℃以下，由此可以获得在变薄后的厚度均匀性优异并且显着改善表面粗糙度的接合晶片。
-
公开(公告)号：US07927957B2
公开(公告)日：2011-04-19
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过包括氧离子注入步骤的方法在具有指定晶片面的有源层的硅晶片上制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
-
公开(公告)号：US20100248447A1
公开(公告)日：2010-09-30
申请号：US12676874
申请日：2008-08-06
IPC分类号： H01L21/30
CPC分类号： H01L21/26533 , H01L21/76243 , H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
摘要翻译： 在通过粘合用于有源层的晶片和用于支撑层的晶片并且使根据本发明的有源层的晶片变薄的方法来制造接合晶片的方法中，在保持温度的状态下将氧离子注入用于有源层的晶片 的活性层的晶片在5×10 15〜5×10 16原子/ cm 2的剂量下在200℃以下，由此可以获得在变薄后的厚度均匀性优异并且显着改善表面粗糙度的接合晶片。
-
公开(公告)号：US20090117708A1
公开(公告)日：2009-05-07
申请号：US11933882
申请日：2007-11-01
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate includes steps of forming a first oxide film on a surface of a first silicon substrate; implanting hydrogen ions into the surface of the first silicon substrate on which the first oxide film is formed to form an ion implant region inside the first silicon substrate; removing the entire or the portion of first oxide film; forming a laminate by bonding the second silicon substrate to a hydrogen ion-implanted surface of the first silicon substrate with the first oxide film, or second oxide film formed on a surface of the second silicon substrate, or the first oxide film and second oxide film, interposed therebetween; and subjecting the laminate to a heat treatment at a predetermined temperature to separate the first silicon substrate along the ion implant region, thereby obtaining an SOI substrate including a thin SOI layer formed on the second silicon substrate with the oxide film interposed therebetween. The method can reduce a degree of contamination from heavy metals inside the SOI substrate.
摘要翻译： SOI衬底的制造方法包括在第一硅衬底的表面上形成第一氧化膜的步骤; 将氢离子注入到其上形成有第一氧化膜的第一硅衬底的表面中以在第一硅衬底内部形成离子注入区; 去除第一氧化膜的全部或部分; 通过将第二硅衬底与形成在第二硅衬底的表面上的第一氧化物膜或第二氧化物膜的第一硅衬底的氢离子注入表面接合，或者将第一氧化物膜和第二氧化物膜 ; 以及在预定温度下对层压体进行热处理以沿离子注入区分离第一硅衬底，从而获得SOI衬底，其包括在第二硅衬底上形成的薄SOI层，其间插入有氧化膜。 该方法可以降低SOI衬底内重金属的污染程度。
-
6.发明授权Laminated substrate manufacturing method and laminated substrate manufactured by the method 有权层叠基板的制造方法和通过该方法制造的层压基板公开(公告)号：US07858494B2
公开(公告)日：2010-12-28
申请号：US11466964
申请日：2006-08-24
CPC分类号： H01L21/762 , H01L21/76254 , H01L21/76256 , H01L27/1203
摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.
摘要翻译： 在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。 通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。 叠加之前的第一和第二半导体基板11和12中的任一个或两者的电阻为0.005-0.2Ω·cm。
-
公开(公告)号：US20100178750A1
公开(公告)日：2010-07-15
申请号：US12503784
申请日：2009-07-15
IPC分类号： H01L21/18
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface.
摘要翻译： 通过去除在有源层的晶片和待接合的支撑基板的晶片的每个表面上形成的一部分或全部自然氧化膜来制造键合晶片; 通过给定的氧化膜形成方法在这些晶片的至少一个表面上形成厚度小于5nm的均匀氧化物膜; 通过均匀的氧化膜将用于有源层的晶片结合到用于支撑衬底的晶片; 减薄晶圆的活性层; 并且在非氧化性气氛中使接合晶片进行给定的热处理，以基本上除去存在于接合界面中的均匀氧化膜。
-
公开(公告)号：US07851337B2
公开(公告)日：2010-12-14
申请号：US11801461
申请日：2007-05-09
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/425
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。
-
公开(公告)号：US07795117B2
公开(公告)日：2010-09-14
申请号：US11796005
申请日：2007-04-25
IPC分类号： H01L21/322 , H01L21/301
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译： 提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中 不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于 通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。
-
公开(公告)号：US20090075453A1
公开(公告)日：2009-03-19
申请号：US12270753
申请日：2008-11-13
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译： 提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中 不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于 通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。
-
-
-
-
-
-
-
-
-
搜索结果
74 条记录 (耗时 0.022 秒)
