公开(公告)号：US20110001816A1

公开(公告)日：2011-01-06

申请号：US12736157

申请日：2009-03-19

Applicant: Isao Yonekura ,  Hidemitsu Hakii

Inventor： Isao Yonekura ,  Hidemitsu Hakii

IPC: H04N7/18

CPC classification number: G01B15/04 ,  G01B2210/56 ,  G01N23/00 ,  G06T7/0006 ,  G06T7/13 ,  G06T2207/10061 ,  G06T2207/10152 ,  G06T2207/30148 ,  G21K7/00 ,  H01J2237/221 ,  H01J2237/2611 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: A microstructure inspection method which inspects an angle of a sidewall of a sample microstructure pattern, the method including: taking SEM photographs of the sample microstructure pattern under plural SEM conditions; measuring a width of a white band at an edge portion of the sample microstructure pattern in the SEM photographs; and calculating the angle of the sidewall of the sample microstructure pattern on the basis of an amount of change in the width of the white band due to the change between the plural SEM conditions.

Abstract translation: 一种微观结构检查方法，其检查样品微观结构图案的侧壁的角度，所述方法包括：在多个SEM条件下取样品微结构图案的SEM照片; 在SEM照片中测量样品微结构图案的边缘部分处的白色带宽; 并且基于由于多个SEM条件之间的变化引起的白带宽度的变化量，计算样品微结构图案的侧壁的角度。

公开(公告)号：US08754935B2

公开(公告)日：2014-06-17

申请号：US12736157

申请日：2009-03-19

Applicant: Isao Yonekura ,  Hidemitsu Hakii

Inventor： Isao Yonekura ,  Hidemitsu Hakii

IPC: G01B15/00 ,  G01N23/00 ,  G21K7/00 ,  G01B15/04

CPC classification number: G01B15/04 ,  G01B2210/56 ,  G01N23/00 ,  G06T7/0006 ,  G06T7/13 ,  G06T2207/10061 ,  G06T2207/10152 ,  G06T2207/30148 ,  G21K7/00 ,  H01J2237/221 ,  H01J2237/2611 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: A microstructure inspection method which inspects an angle of a sidewall of a sample microstructure pattern, the method including: taking SEM photographs of the sample microstructure pattern under plural SEM conditions; measuring a width of a white band at an edge portion of the sample microstructure pattern in the SEM photographs; and calculating the angle of the sidewall of the sample microstructure pattern on the basis of an amount of change in the width of the white band due to the change between the plural SEM conditions.

Abstract translation: 一种微观结构检查方法，其检查样品微观结构图案的侧壁的角度，所述方法包括：在多个SEM条件下取样品微结构图案的SEM照片; 在SEM照片中测量样品微结构图案的边缘部分处的白色带宽度; 并且基于由于多个SEM条件之间的变化引起的白带宽度的变化量，计算样品微结构图案的侧壁的角度。

公开(公告)号：US08604431B2

公开(公告)日：2013-12-10

申请号：US13407521

申请日：2012-02-28

Applicant: Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

Inventor： Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/24 ,  G01N23/225

CPC classification number: H01J37/26 ,  G01B15/00 ,  G01B2210/56 ,  G01N23/225 ,  H01J37/222 ,  H01J37/24 ,  H01J37/28 ,  H01J2237/24578

Abstract: An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L×tan θ on the basis of the detected length L of the shadow and an apparent angle θ of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

Abstract translation: 电子束被照射在样品表面的观察区域上。 基于从观察区域倾斜地设置的检测器的二次电子的检测信号获取图像（SEM图像）。 检测图像中出现的图案的阴影的长度。 然后，基于检测到的阴影长度L和预先获得的检测器对样品表面的视角θ，通过公式H = L×tanθ计算图案的高度H. 提取与图案边缘正交的线上的二次电子的强度分布，并且获得图案阴影的长度L作为强度分布的凹部与预定阈值相交的两个点之间的距离 。

公开(公告)号：US20120217392A1

公开(公告)日：2012-08-30

申请号：US13407521

申请日：2012-02-28

Applicant: Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

Inventor： Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

IPC: H01J37/26

CPC classification number: H01J37/26 ,  G01B15/00 ,  G01B2210/56 ,  G01N23/225 ,  H01J37/222 ,  H01J37/24 ,  H01J37/28 ,  H01J2237/24578

Abstract: An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L× tan θ on the basis of the detected length L of the shadow and an apparent angle θ of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

Abstract translation: 电子束被照射在样品表面的观察区域上。 基于从观察区域倾斜地设置的检测器的二次电子的检测信号获取图像（SEM图像）。 检测图像中出现的图案的阴影的长度。 然后，通过公式H = L×tan＆Thetas计算图案的高度H; 基于检测到的阴影长度L和视角＆amp;θ; 的检测器预先获得的样品表面。 提取与图案边缘正交的线上的二次电子的强度分布，并且获得图案阴影的长度L作为强度分布的凹部与预定阈值相交的两个点之间的距离 。

公开(公告)号：US20120318976A1

公开(公告)日：2012-12-20

申请号：US13495809

申请日：2012-06-13

Applicant: Jun Matsumoto ,  Hiroshi Fukaya ,  Isao Yonekura ,  Hidemitsu Hakii

Inventor： Jun Matsumoto ,  Hiroshi Fukaya ,  Isao Yonekura ,  Hidemitsu Hakii

IPC: H01J37/26

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24592

Abstract: A pattern measurement apparatus scans an observation region of a sample surface with an electron beam and detects secondary electrons emitted from the sample surface with the irradiation of the electron beam, by using a plurality of electron detectors arranged around the optical axis of the electron beam. Images are taken in two directions that are orthogonal to a pattern extending direction, and are opposite to each other across the optical axis. Then, profiles of a line orthogonal to each of edges are extracted from the images, and a subtraction between the line profiles is taken to obtain a subtractive profile. The position of an upper end of each edge is detected based on a descending portion of the subtractive profile, and the position of a lower end of the edge is detected based on a rising portion or a descending portion of one of the line profiles.

Abstract translation: 图案测量装置用电子束扫描样品表面的观察区域，通过使用围绕电子束的光轴布置的多个电子检测器，利用电子束的照射来检测从样品表面发射的二次电子。 图像沿与图案延伸方向正交的两个方向拍摄，并且在光轴上彼此相对。 然后，从图像中提取与每个边缘正交的线的轮廓，并且采用线轮廓之间的减法来获得减影轮廓。 基于减法轮廓的下降部分检测每个边缘的上端的位置，并且基于一个线轮廓的上升部分或下降部分来检测边缘的下端的位置。