1-Phenyl-1H-pyrazolo [3,4-b]pyrazine derivatives and process for
preparing same
    1.
    发明授权
    1-Phenyl-1H-pyrazolo [3,4-b]pyrazine derivatives and process for preparing same 失效
    1-苯基-1H-吡唑并[3,4-b]吡嗪衍生物及其制备方法

    公开(公告)号:US4460773A

    公开(公告)日:1984-07-17

    申请号:US428016

    申请日:1982-09-29

    CPC分类号: C07D407/04

    摘要: Novel 1-phenyl-1H-pyrazolo[3,4-b]pyrazine derivatives are provided which are represented by the formula: ##STR1## wherein A is (i) ##STR2## in which R.sub.1 and R.sub.2 are hydrogen or an alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl or amino group, or a divalent radical forming a nitrogen-containing saturated heterocyclic ring together with the nitrogen atom, (ii) ##STR3## wherein R.sub.3 is a phenyl group which is unsubstituted or substituted by halogen or a lower alkyl, lower alokoxy, carboxyl or nitro group, and R.sub.4 is halogen or a methyl or ethyl group, (iii)--OR.sub.5 in which R.sub.5 is a phenyl group which is unsubstituted or substituted by halogen or a hydroxyl, lower alkyl, lower alkoxy, amino or lower alkylamide group, or (iv)--OR.sub.6 is an alkyl group which is unsubstituted or substituted by halogen or a phenyl, furanyl, tetrahydrofuranyl or alkylamino group. These derivatives have antitumor or antiviral activity.

    摘要翻译: 提供新的1-苯基-1H-吡唑并[3,4-b]吡嗪衍生物,其由下式表示:其中A是(i)其中R 1和R 2是氢或烷基,被取代的 烷基,环烷基,取代的环烷基或氨基,或与氮原子一起形成含氮饱和杂环的二价基团,(ii)其中R3是未被取代或被卤素或低级 烷基,低级甲氧基,羧基或硝基,R4为卤素或甲基或乙基,(ⅲ)-OR5,其中R5为未取代的或被卤素或羟基取代的苯基,低级烷基,低级烷氧基, 氨基或低级烷基酰胺基,或(iv)-OR 6是未被取代或被卤素或苯基,呋喃基,四氢呋喃基或烷基氨基取代的烷基。 这些衍生物具有抗肿瘤或抗病毒活性。

    DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE
    2.
    发明申请
    DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE 审中-公开
    薄膜装置的沉积装置和制造方法

    公开(公告)号:US20110111581A1

    公开(公告)日:2011-05-12

    申请号:US13001730

    申请日:2009-06-16

    IPC分类号: H01L21/265 H01J37/08

    摘要: [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions.[Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, an irradiated ion guide member 50 and an irradiated electron guide member 52 are respectively attached to the ion gun 38 and the neutralizer 40.

    摘要翻译: 本发明提供一种能够抑制成膜条件的时间变化的沉积装置1。 [解决方案]在包括支撑在接地的真空室10中的衬底保持器12的沉积设备1中,由衬底保持器12保持的衬底14,远离衬底14放置的沉积源34,36以面对 基板,用于向基板14照射离子的离子枪38和用于向基板14照射电子的中和器40,照射的离子引导构件50和照射的电子引导构件52分别安装在离子枪38和中和器 40。

    DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE
    3.
    发明申请
    DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE 审中-公开
    薄膜装置的沉积装置和制造方法

    公开(公告)号:US20110097511A1

    公开(公告)日:2011-04-28

    申请号:US13001724

    申请日:2009-06-16

    IPC分类号: C23C14/48

    摘要: [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions.[Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, the vacuum chamber 10 is provided with an inner wall 30 electrically floating, and the neutralizer 40 is arranged on the inner side surface side of the vacuum chamber 10 so as to be distant from the ion gun 38.

    摘要翻译: 本发明提供一种能够抑制成膜条件的时间变化的沉积装置1。 [解决方案]在包括支撑在接地的真空室10中的衬底保持器12的沉积设备1中,由衬底保持器12保持的衬底14,远离衬底14放置的沉积源34,36以面对 基板,用于向基板14照射离子的离子枪38和用于向基板14照射电子的中和器40,真空室10设置有电浮动的内壁30,并且中和器40布置在内侧 真空室10的表面侧,以远离离子枪38。