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公开(公告)号:US3942241A
公开(公告)日:1976-03-09
申请号:US550396
申请日:1975-02-18
申请人: Hiroshi Harigaya , Toshio Kano , Eishi Aizawa
发明人: Hiroshi Harigaya , Toshio Kano , Eishi Aizawa
IPC分类号: H01L29/78 , H01L21/00 , H01L21/336 , H01L21/60 , H01L23/485 , H01L29/08 , H01L29/45 , B01J17/00
CPC分类号: H01L29/456 , H01L21/00 , H01L23/485 , H01L24/80 , H01L29/0847 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01079 , H01L2924/1306 , H01L2924/14 , H01L2924/30105 , Y10S148/141
摘要: A gate self-alignment type field-effect semiconductor device is formed with an insulating film deposited on the surface of a substrate. A polycrystal silicon doped with impurities having a type of conductivity opposite to the conductivity of the substrate extends through a gap in said insulating film to engage the surface of said substrate so as to serve as both a diffusion source and electrode for each of the source and drain of the device.
摘要翻译: 栅极自对准型场效应半导体器件形成有沉积在衬底表面上的绝缘膜。 掺杂有与衬底的导电性相反的导电类型的杂质的多晶硅通过所述绝缘膜中的间隙延伸以接合所述衬底的表面,以便用作源和源中的每一个的扩散源和电极 设备的漏极。