Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor
    3.
    发明申请
    Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor 失效
    化学机械抛光浆料组合物用于浅沟槽隔离工艺的半导体

    公开(公告)号:US20070220813A1

    公开(公告)日:2007-09-27

    申请号:US10594537

    申请日:2005-03-24

    IPC分类号: C09G1/02

    CPC分类号: H01L21/31053 C09G1/02

    摘要: The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.

    摘要翻译: 本发明涉及用于浅沟槽隔离的化学机械抛光浆料,更具体地涉及包含由去离子水,抛光颗粒和抛光颗粒分散剂组成的含水磨料溶液的化学机械抛光浆料。 和由羧酸高分子化合物,含氮有机环状化合物和胺基化合物组成的添加剂水溶液。 通过向丙烯酸类高分子化合物中添加含氮有机环状化合物,通过添加胺来提高氧化硅膜的除去速度,可以显着降低氮化膜的研磨速度,从而提高浆料的除去选择性 - 基团化合物,其是氧化硅膜的水解促进剂。

    Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor
    4.
    发明授权
    Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor 失效
    半导体浅沟槽隔离工艺的化学机械抛光浆料组成

    公开(公告)号:US07497966B2

    公开(公告)日:2009-03-03

    申请号:US10594537

    申请日:2005-03-24

    IPC分类号: C09K13/00

    CPC分类号: H01L21/31053 C09G1/02

    摘要: The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.

    摘要翻译: 本发明涉及用于浅沟槽隔离的化学机械抛光浆料,更具体地涉及包含由去离子水,抛光颗粒和抛光颗粒分散剂组成的含水磨料溶液的化学机械抛光浆料。 和由羧酸高分子化合物,含氮有机环状化合物和胺基化合物组成的添加剂水溶液。 通过向丙烯酸类高分子化合物中添加含氮有机环状化合物,通过添加胺来提高氧化硅膜的除去速度,可以显着降低氮化膜的研磨速度,从而提高浆料的除去选择性 - 基团化合物,其是氧化硅膜的水解促进剂。