公开(公告)号：US20080165500A1

公开(公告)日：2008-07-10

申请号：US12073877

申请日：2008-03-11

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  F28F3/086 ,  H01L2924/0002 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/4025 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

公开(公告)号：US07291922B2

公开(公告)日：2007-11-06

申请号：US11207715

申请日：2005-08-22

Applicant: Hokichi Yoshioka ,  Kazuhiko Ito

Inventor： Hokichi Yoshioka ,  Kazuhiko Ito

IPC: H01L23/48

CPC classification number: H05K3/4046 ,  H01L23/10 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/01079 ,  H05K1/0306 ,  H05K3/388 ,  H05K2201/09572 ,  H05K2201/10242 ,  H01L2924/00

Abstract: A substrate having many via contact means disposed therein. Each of the via contact means is composed of a via hole, as a through-hole, formed in the substrate, a metal film disposed on the inner peripheral surface of the via hole, and a solder filled into the cavity defined by the metal film.

Abstract translation: 具有设置在其中的许多通孔接触装置的基板。 每个通孔接触装置由形成在基板中的作为通孔的通孔，设置在通孔的内周面上的金属膜和填充到由金属膜限定的空腔中的焊料构成 。

公开(公告)号：US07365986B2

公开(公告)日：2008-04-29

申请号：US11094191

申请日：2005-03-31

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  H01L2924/0002 ,  H01S5/02423 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止在半导体冷却装置中发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm 2的材料制成的辅助板的一个表面或两个表面上电镀铜而保持厚度不小于0.05mm的复合板， SUP> 2，热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。

公开(公告)号：US07492595B2

公开(公告)日：2009-02-17

申请号：US12073877

申请日：2008-03-11

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  F28F3/086 ,  H01L2924/0002 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/4025 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止在半导体冷却装置中发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm2的材料制成的辅助板的一个表面或两个表面上镀铜保持不小于0.05mm的厚度构成的复合板， 热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。

公开(公告)号：US20060038288A1

公开(公告)日：2006-02-23

申请号：US11207715

申请日：2005-08-22

Applicant: Hokichi Yoshioka ,  Kazuhiko Ito

Inventor： Hokichi Yoshioka ,  Kazuhiko Ito

IPC: H01L23/04

CPC classification number: H05K3/4046 ,  H01L23/10 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/01079 ,  H05K1/0306 ,  H05K3/388 ,  H05K2201/09572 ,  H05K2201/10242 ,  H01L2924/00

Abstract: A substrate having many via contact means disposed therein. Each of the via contact means is composed of a via hole, as a through-hole, formed in the substrate, a metal film disposed on the inner peripheral surface of the via hole, and a solder filled into the cavity defined by the metal film.

Abstract translation: 具有设置在其中的许多通孔接触装置的基板。 每个通孔接触装置由形成在基板中的作为通孔的通孔，设置在通孔的内周面上的金属膜和填充到由金属膜限定的空腔中的焊料构成 。

公开(公告)号：US20050168950A1

公开(公告)日：2005-08-04

申请号：US11094191

申请日：2005-03-31

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H01L23/473 ,  H01S5/024 ,  H05K7/20

CPC classification number: H01L23/473 ,  H01L2924/0002 ,  H01S5/02423 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in semiconductor cooling device and to prevent the semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止半导体冷却装置发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，为了防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm 2的材料制成的辅助板的一个表面上或在两个表面上镀铜而保持厚度不小于0.05mm的复合板， SUP> 2，热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。