公开(公告)号：US07492595B2

公开(公告)日：2009-02-17

申请号：US12073877

申请日：2008-03-11

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  F28F3/086 ,  H01L2924/0002 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/4025 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止在半导体冷却装置中发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm2的材料制成的辅助板的一个表面或两个表面上镀铜保持不小于0.05mm的厚度构成的复合板， 热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。

公开(公告)号：US06998604B2

公开(公告)日：2006-02-14

申请号：US10359697

申请日：2003-02-07

Applicant: Hiroshi Nishizawa ,  Tomoyuki Shiomi ,  Satoshi Senoo

Inventor： Hiroshi Nishizawa ,  Tomoyuki Shiomi ,  Satoshi Senoo

IPC: G01T1/20

CPC classification number: A61N5/1048 ,  A61B6/583 ,  A61N5/1042 ,  A61N2005/1076 ,  G01T1/203

Abstract: An apparatus for measuring absorption dose distribution may be used for radiotherapy, such as intensity modulated radiotherapy and radiosurgery. In the apparatus, measurement or evaluation of the distribution of the radiated dose within a phantom can be achieved accurately and in a relatively short length of time. The apparatus includes a phantom with a plastic plate scintillator having a thickness within the range of 0.15 to 1 mm and plastic blocks sandwiching the plastic scintillator, and an image analyzer. At least one of the plastic blocks is transparent and the image analyzer measures a pattern of intensity distribution of light emitted from the plastic scintillator when the phantom is irradiated.

Abstract translation: 用于测量吸收剂量分布的装置可以用于放射治疗，例如强度调制放射治疗和放射外科手术。 在该装置中，可以在相当短的时间内精确地实现模体内辐射剂量分布的测量或评估。 该装置包括具有厚度在0.15至1mm范围内的塑料板闪烁器和夹持塑料闪烁体的塑料块的模型和图像分析器。 至少一个塑料块是透明的，并且图像分析仪测量当体模照射时从塑料闪烁体发射的光的强度分布的图案。

公开(公告)号：US20050168950A1

公开(公告)日：2005-08-04

申请号：US11094191

申请日：2005-03-31

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H01L23/473 ,  H01S5/024 ,  H05K7/20

CPC classification number: H01L23/473 ,  H01L2924/0002 ,  H01S5/02423 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in semiconductor cooling device and to prevent the semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止半导体冷却装置发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，为了防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm 2的材料制成的辅助板的一个表面上或在两个表面上镀铜而保持厚度不小于0.05mm的复合板， SUP> 2，热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。

公开(公告)号：US6066851A

公开(公告)日：2000-05-23

申请号：US974552

申请日：1997-11-19

Applicant: Kunio Madono ,  Eisaku Teratani ,  Kazunori Ikegami ,  Hiroshi Nishizawa ,  Satoshi Senoo

Inventor： Kunio Madono ,  Eisaku Teratani ,  Kazunori Ikegami ,  Hiroshi Nishizawa ,  Satoshi Senoo

IPC: G21K4/00 ,  G01T1/00 ,  G01T1/02 ,  G01T1/20 ,  G01T1/204

CPC classification number: G01T1/169 ,  G01T1/02 ,  G01T1/20 ,  G01T1/204

Abstract: A radiation deep dose measuring apparatus. A corpuscular beam detector of scintillation fibers bundled together into a block is adjusted in position to have a width similar to the radiation range of corpuscular beams; a driving apparatus rotates the corpuscular beam detector and an image receiver together around a center corresponding to a radial axis of the beams; the image receiver captures the image of scintillation light emanating from the corpuscular beam detector; an image signal processing apparatus processes the image signal to produce the distribution of radiation doses as a function of depth; and a displaying apparatus displays the result. The radiation deep dose measuring apparatus allows rapid measurement of radiation doses in three-dimensional space.

Abstract translation: 辐射深度剂量测量装置。 将闪光纤维的粒子束检测器束缚在一起成块，以使其宽度类似于粒子束的辐射范围; 驱动装置将颗粒束检测器和图像接收器围绕对应于梁的径向轴的中心旋转; 图像接收器捕获从红细胞束检测器发出的闪烁光的图像; 图像信号处理装置处理图像信号以产生作为深度的函数的辐射剂量的分布; 显示装置显示结果。 辐射深度剂量测量装置允许在三维空间中快速测量辐射剂量。

公开(公告)号：US20080165500A1

公开(公告)日：2008-07-10

申请号：US12073877

申请日：2008-03-11

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  F28F3/086 ,  H01L2924/0002 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/4025 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

公开(公告)号：US5905263A

公开(公告)日：1999-05-18

申请号：US864462

申请日：1997-05-29

Applicant: Hiroshi Nishizawa ,  Kazunori Ikegami ,  Kunio Madono ,  Eisaku Teratani ,  Satoshi Senoo

Inventor： Hiroshi Nishizawa ,  Kazunori Ikegami ,  Kunio Madono ,  Eisaku Teratani ,  Satoshi Senoo

IPC: G21K4/00 ,  A61N5/10 ,  G01T1/02 ,  G01T1/20 ,  G01T1/22 ,  G01T5/08

CPC classification number: G01T1/201 ,  A61N5/1048 ,  G01T1/02 ,  G01T1/22

Abstract: In a depth dose measuring device, a light is outputted from an end surface of a block-type detector (202) formed by tying a plurality of scintillation fibers in a bundle, a spectroscope (204) is used to disperse the light so as to measure an amount of light having a wavelength corresponding to an emission spectrum of the scintillation fibers, a picture measuring device (205) and a picture processing device (206) calculate an emission distribution of only a scintillation light depending upon an emission distribution in which the scintillation light and a Cerenkov light are mixed, and a result is displayed on a display device (207).

Abstract translation: 在深度剂量测量装置中，从通过捆绑多束闪烁纤维形成的块式检测器（202）的端面输出光，使用分光镜（204）分散光，以便 测量具有对应于闪烁纤维的发射光谱的波长的光量，图像测量装置（205）和图像处理装置（206）根据排放分布计算仅闪烁光的发射分布，其中， 闪烁灯和切伦科夫灯混合，结果显示在显示装置（207）上。

公开(公告)号：US07365986B2

公开(公告)日：2008-04-29

申请号：US11094191

申请日：2005-03-31

Applicant: Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

Inventor： Hokichi Yoshioka ,  Takayuki Yamaoka ,  Satoshi Senoo

IPC: H05K7/20

CPC classification number: H01L23/473 ,  H01L2924/0002 ,  H01S5/02423 ,  H01L2924/00

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract translation: 为了防止在半导体冷却装置中发生变形，并且在半导体芯片和半导体冷却装置热膨胀的情况下，防止半导体芯片与半导体冷却装置分离，半导体冷却装置至少包括上板， 中间板和下板，并且具有冷却剂入口部分，出口部分和流动通道部分。 上板和下板是通过在由抗拉强度不小于1000N / mm 2的材料制成的辅助板的一个表面或两个表面上电镀铜而保持厚度不小于0.05mm的复合板， SUP> 2，热导率不小于100W / mK，热膨胀系数不大于6.0ppm /℃。