公开(公告)号：US09035312B2

公开(公告)日：2015-05-19

申请号：US11316895

申请日：2005-12-27

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/12

CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT array substrate is provided. The TFT array substrate includes a gate electrode connected to a gate line; a source electrode connected to a data line, the data line crossing the gate line to define a pixel region; a drain electrode facing the source electrode with a channel interposed therebetween; a semiconductor layer forming the channel between the source electrode and the drain electrode; a channel passivation layer formed on the channel to protect the semiconductor layer; a pixel electrode disposed in the pixel region to contact with the drain electrode; a storage capacitor including the pixel electrode extending over the gate line to form a storage area on a gate insulating layer on which a semiconductor layer pattern and a metal layer pattern are stacked; a gate pad extending from the gate line; and a data pad connected to the data line.

摘要翻译： 提供TFT阵列基板。 TFT阵列基板包括连接到栅极线的栅电极; 连接到数据线的源电极，所述数据线与所述栅极线交叉以限定像素区域; 面向源电极的漏电极，其间插入有沟道; 形成源电极和漏电极之间的沟道的半导体层; 形成在沟道上以保护半导体层的沟道钝化层; 设置在所述像素区域中以与所述漏电极接触的像素电极; 存储电容器，包括在所述栅极线上延伸的所述像素电极，以在其上层叠有半导体层图案和金属层图案的栅极绝缘层上形成存储区域; 从栅极线延伸的栅极焊盘; 以及连接到数据线的数据焊盘。

公开(公告)号：US08507301B2

公开(公告)日：2013-08-13

申请号：US12591657

申请日：2009-11-25

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/458

摘要： A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

摘要翻译： TFT阵列基板包括：连接到栅极线的栅电极; 源极连接到与栅极线交叉以限定像素区域的数据线; 漏电极，其与源电极相对，沟道位于其间; 限定所述源电极和所述漏电极之间的沟道的半导体层; 像素区域中的像素电极并连接到漏电极; 在半导体层的沟道上的沟道钝化层; 从栅极线延伸的栅极焊盘，其中形成半导体图案和透明导电图案; 连接到数据线的数据焊盘，其中形成透明导电图案; 以及形成在半导体层下方的栅极绝缘层，栅极线和栅极焊盘，以及数据线和数据焊盘。

公开(公告)号：US07960199B2

公开(公告)日：2011-06-14

申请号：US12541569

申请日：2009-08-14

申请人： Young Seok Choi ,  Byung Yong Ahn ,  Ki Su Cho ,  Hong Woo Yu

发明人： Young Seok Choi ,  Byung Yong Ahn ,  Ki Su Cho ,  Hong Woo Yu

IPC分类号： H01L33/00

CPC分类号： H01L29/41733 ,  G02F1/136209 ,  G02F2001/136236 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.

摘要翻译： 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板保护薄膜晶体管而没有保护膜，从而降低制造成本。 在薄膜晶体管阵列基板中，栅电极连接到栅极线。 源电极连接到与栅极线交叉的数据线，以限定像素区域。 漏电极与源电极相对，其间具有沟道。 半导体层在通道中。 像素区域中的像素电极在两者之间的整个重叠区域上接触漏电极。 在对应于沟道的半导体层上提供沟道保护膜以保护半导体层。

公开(公告)号：US07804089B2

公开(公告)日：2010-09-28

申请号：US11289506

申请日：2005-11-30

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L31/00

CPC分类号： G02F1/13458 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

摘要翻译： 提供TFT阵列基板。 TFT阵列基板包括：栅极连接到栅极线; 源极连接到与栅极线交叉并限定像素区域的数据线; 面向源电极的漏电极，其间具有通道; 在源电极和漏电极之间形成沟道的半导体层; 像素区域中的像素电极并与漏电极接触; 形成在所述半导体层上的沟道钝化层; 栅极焊盘，其具有从栅极线延伸的栅极焊盘下部电极; 以及具有与数据线分离的数据焊盘下电极的数据焊盘。

公开(公告)号：US09018053B2

公开(公告)日：2015-04-28

申请号：US12870395

申请日：2010-08-27

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L21/00 ,  G02F1/1345 ,  H01L27/12 ,  G02F1/1362

CPC分类号： G02F1/13458 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

摘要翻译： 提供TFT阵列基板。 TFT阵列基板包括：栅极连接到栅极线; 源极连接到与栅极线交叉并限定像素区域的数据线; 面向源电极的漏电极，其间具有通道; 在源电极和漏电极之间形成沟道的半导体层; 像素区域中的像素电极并与漏电极接触; 形成在所述半导体层上的沟道钝化层; 栅极焊盘，其具有从栅极线延伸的栅极焊盘下部电极; 以及具有与数据线分离的数据焊盘下电极的数据焊盘。

公开(公告)号：US20100075472A1

公开(公告)日：2010-03-25

申请号：US12591657

申请日：2009-11-25

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L21/336 ,  H01L21/02

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/458

摘要： A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

摘要翻译： TFT阵列基板包括：连接到栅极线的栅电极; 源极连接到与栅极线交叉以限定像素区域的数据线; 漏电极，其与源电极相对，沟道位于其间; 限定所述源电极和所述漏电极之间的沟道的半导体层; 像素区域中的像素电极并连接到漏电极; 在半导体层的沟道上的沟道钝化层; 从栅极线延伸的栅极焊盘，其中形成半导体图案和透明导电图案; 连接到数据线的数据焊盘，其中形成透明导电图案; 以及形成在半导体层下方的栅极绝缘层，栅极线和栅极焊盘，以及数据线和数据焊盘。

公开(公告)号：US07646018B2

公开(公告)日：2010-01-12

申请号：US11289503

申请日：2005-11-30

申请人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok Choi ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/458

摘要： A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

公开(公告)号：US20100001278A1

公开(公告)日：2010-01-07

申请号：US12541569

申请日：2009-08-14

申请人： Young Seok Choi ,  Byung Yong Ahn ,  Ki Sul Cho ,  Hong Woo Yu

发明人： Young Seok Choi ,  Byung Yong Ahn ,  Ki Sul Cho ,  Hong Woo Yu

IPC分类号： H01L33/00 ,  H01L21/336 ,  H01L21/28

CPC分类号： H01L29/41733 ,  G02F1/136209 ,  G02F2001/136236 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288

摘要： A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.

摘要翻译： 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板保护薄膜晶体管而没有保护膜，从而降低制造成本。 在薄膜晶体管阵列基板中，栅电极连接到栅极线。 源电极连接到与栅极线交叉的数据线，以限定像素区域。 漏电极与源电极相对，其间具有沟道。 半导体层在通道中。 像素区域中的像素电极在两者之间的整个重叠区域上接触漏电极。 在对应于沟道的半导体层上提供沟道保护膜以保护半导体层。

公开(公告)号：US08686629B2

公开(公告)日：2014-04-01

申请号：US11819937

申请日：2007-06-29

申请人： Il-Su Oh ,  Jong-Sung Kim ,  Hong-Woo Yu ,  Kwang-Yeon Lee

发明人： Il-Su Oh ,  Jong-Sung Kim ,  Hong-Woo Yu ,  Kwang-Yeon Lee

IPC分类号： H01J1/62

CPC分类号： H01L51/5281 ,  H01L27/3246 ,  H01L27/3283

摘要： An organic light emitting display device (OLED) includes a transparent substrate a first electrode formed on the transparent substrate a partition wall including first and second tapered structures having different tapers and formed on the first electrode, and an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall and a second electrode. The OLED device is manufactured by, for example, forming a first electrode on a transparent substrate, forming a partition wall having first and second tapered structures on the first electrode, and forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall.

摘要翻译： 有机发光显示装置（OLED）包括：透明基板，形成在透明基板上的第一电极，分隔壁，其包括具有不同锥度的第一和第二锥形结构，并形成在第一电极上;以及有机发光层， 的第一电极低于分隔壁的水平面和第二电极。 OLED器件通过例如在透明基板上形成第一电极而制造，在第一电极上形成具有第一和第二锥形结构的分隔壁，并且在两者上依次形成有机发光层和第二电极 第一电极的侧面低于分隔壁的高度。

公开(公告)号：US20100323482A1

公开(公告)日：2010-12-23

申请号：US12870395

申请日：2010-08-27

申请人： Young Seok CHOI ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

发明人： Young Seok CHOI ,  Hong Woo Yu ,  Ki Sul Cho ,  Jae Ow Lee ,  Bo Kyoung Jung

IPC分类号： H01L21/84

CPC分类号： G02F1/13458 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

摘要翻译： 提供TFT阵列基板。 TFT阵列基板包括：栅极连接到栅极线; 源极连接到与栅极线交叉并限定像素区域的数据线; 面向源电极的漏电极，其间具有通道; 在源电极和漏电极之间形成沟道的半导体层; 像素区域中的像素电极并与漏电极接触; 形成在所述半导体层上的沟道钝化层; 栅极焊盘，其具有从栅极线延伸的栅极焊盘下部电极; 以及具有与数据线分离的数据焊盘下电极的数据焊盘。