公开(公告)号：US06352938B2

公开(公告)日：2002-03-05

申请号：US09457561

申请日：1999-12-09

申请人： Tong-Yu Chen ,  Hsi-Ta Chuang ,  Chan-Lon Yang

发明人： Tong-Yu Chen ,  Hsi-Ta Chuang ,  Chan-Lon Yang

IPC分类号： H01L21302

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879

摘要： A method of manufacturing metallic interconnects. A substrate has a copper line formed therein. An inter-metal dielectric layer is formed over the substrate and the copper line. A patterned photoresist layer is formed over the inter-metal dielectric layer. The inter-metal dielectric layer is etched to form a trench and a contact opening that exposes a portion of the copper line, wherein the contact opening is under the trench. At a low temperature and using a plasma derived from a gaseous mixture N2H2 (H2:4%)/O2, the photoresist layer is removed. Any copper oxide layer formed on the copper line in the process of removing photoresist material is reduced back to copper using gaseous N2H2 (H2:4%). A barrier layer conformal to the trench and the contact opening profile is formed. Copper is deposited to form a conformal first copper layer over the trench and the contact opening. Using the first copper layer as a seeding layer, a copper or a copperless electroplating is carried out so that a second copper layer is grown anisotropically over the first copper layer.

摘要翻译： 一种制造金属互连的方法。 基板上形成有铜线。 在衬底和铜线之上形成金属间介电层。 在金属间介电层上形成图案化的光致抗蚀剂层。 蚀刻金属间电介质层以形成暴露铜线的一部分的沟槽和接触开口，其中接触开口在沟槽下方。 在低温下并使用来自气态混合物N 2 H 2（H 2：4％）/ O 2）的等离子体，除去光致抗蚀剂层。 在除去光致抗蚀剂材料的工艺中在铜线上形成的任何铜氧化物层都使用气态N 2 H 2（H 2：4％）还原成铜。 形成与沟槽一致的阻挡层和形成接触开口轮廓。 沉积铜以在沟槽和接触开口上形成共形的第一铜层。 使用第一铜层作为接种层，进行铜或无铜电镀，使得第二铜层在第一铜层上各向异性地生长。

公开(公告)号：US6037206A

公开(公告)日：2000-03-14

申请号：US080116

申请日：1998-05-15

申请人： Kuo-Tai Huang ,  Hsi-Ta Chuang ,  Tri-Rung Yew

发明人： Kuo-Tai Huang ,  Hsi-Ta Chuang ,  Tri-Rung Yew

IPC分类号： H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10817

摘要： A method for fabricating a capacitor of a DRAM includes a lower conductive layer of the capacitor is formed over a substrate and is electrically coupled to an interchangeable source/drain region through a contact window penetrating an insulating layer. Then performing etching process on the lower conductive layer so as to form a fence-like plate with a higher height than a thickness of the lower conductive layer and adhere to the lower conductive layer. Next a media conductive layer is formed over the lower conductive layer and the fence-like plate. Then the technology of etching back is utilized to round the sharp area on the tip of the fence-like plate. The lower conductive layer and the media conductive layer are electrically coupled together as a lower electrode. Then, a dielectric thin film is formed over the media conductive layer and an upper electrode is formed over the dielectric thin film. Therefore, a MIM capacitor according to the preferred embodiment of the invention is formed.

摘要翻译： 一种用于制造DRAM电容器的方法包括：电容器的下导电层形成在衬底上，并通过穿透绝缘层的接触窗电耦合到可互换的源/漏区。 然后对下导电层进行蚀刻处理，以形成具有比下导电层的厚度高的高度的栅栏状的板，并粘附到下导电层。 接下来，在下导电层和栅栏状板上形成介质导电层。 然后，利用蚀刻技术来围绕栅栏状板的尖端上的尖锐区域。 下导电层和介质导电层作为下电极电耦合在一起。 然后，在介质导电层上形成电介质薄膜，在电介质薄膜上方形成上电极。 因此，形成根据本发明的优选实施例的MIM电容器。