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13 条记录 (耗时 0.022 秒)

    Micro-Resonant Structure for Optical Recording
    3.
    发明申请
    Micro-Resonant Structure for Optical Recording 审中-公开
    用于光学记录的微谐振结构

    公开(公告)号：US20080057256A2

    公开(公告)日：2008-03-06

    申请号：US11254543

    申请日：2005-10-20

    申请人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai ,  Yong Chong ,  Ko-Fu Yen

    发明人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai ,  Yong Chong ,  Ko-Fu Yen

    IPC分类号： B32B3/02

    CPC分类号： G11B7/243 ,  G11B7/00455 ,  G11B7/24038 ,  G11B2007/0013

    摘要： A recordable medium includes a recordable structure including a first layer having a reflectivity R1 and a transmissivity T1, a second layer having a transmissivity T2, and a third layer having a reflectivity R3. The second layer is disposed between the first and third layers and has a thickness that is less than a Debye length determined based on a charge density of the second layer. The recordable structure has an overall reflectivity Rsum that is greater than R1+T12*T22*R2.

    摘要翻译： 可记录介质包括可记录结构，其包括具有反射率R 1和透射率T 1的第一层，具有透射率T 2的第二层和具有反射率R 3的第三层。 第二层设置在第一层和第三层之间，其厚度小于基于第二层的电荷密度确定的德拜长度。 可记录结构具有大于R 1 + T 2 2 * T 2 2 * R 2的总体反射率R＆amp;和＆lt; / SUB。

    RECORDABLE ELECTRICAL MEMORY
    4.
    发明申请
    RECORDABLE ELECTRICAL MEMORY 有权
    可记录电气记忆

    公开(公告)号：US20080285337A1

    公开(公告)日：2008-11-20

    申请号：US11855532

    申请日：2007-09-14

    申请人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    发明人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    IPC分类号： G11C11/34 ,  H01L21/36

    CPC分类号： G11C11/5664 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/77 ,  Y10T29/41

    摘要： A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.

    摘要翻译： 存储器件包括每个在两个金属层之间具有可记录层的存储器单元，每个存储单元被构造和设计成在施加初始化信号时从第一状态改变到第二状态，并且从第二状态变为第三状态 在应用写入信号时。 对于施加在两个金属层两侧的规定范围内的电压，存储单元在第一状态下具有比在第二状态下更低的电阻，并且在第二状态下具有比在第三状态中更高的电阻。

    Multiple Recording Structures for Optical Recording
    5.
    发明申请
    Multiple Recording Structures for Optical Recording 审中-公开
    用于光学记录的多个记录结构

    公开(公告)号：US20080056088A2

    公开(公告)日：2008-03-06

    申请号：US11255069

    申请日：2005-10-20

    申请人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai

    发明人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai

    IPC分类号： G11B20/10 ,  G11B3/70

    CPC分类号： G11B7/243 ,  G11B7/24038 ,  G11B2007/0013

    摘要： A recordable medium includes a first recordable structure, a second recordable structure, and a spacer layer positioned between the first and second recordable structures. The first recordable structure has a transmissivity with respect to a read beam that increases upon application of a write power to the first recordable structure. The second recordable structure has an optical property that changes upon application of a write power to the second recordable structure.

    摘要翻译： 可记录介质包括第一可记录结构，第二可记录结构和位于第一和第二可记录结构之间的间隔层。 第一可记录结构相对于在向第一可记录结构施加写入功率而增加的读取光束具有透射率。 第二可记录结构具有在向第二可记录结构施加写入功率时改变的光学特性。

    Recordable electrical memory
    6.
    发明授权
    Recordable electrical memory 有权
    可记录电气记忆

    公开(公告)号：US07813158B2

    公开(公告)日：2010-10-12

    申请号：US11855532

    申请日：2007-09-14

    申请人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    发明人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5664 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/77 ,  Y10T29/41

    摘要： A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.

    摘要翻译： 存储器件包括每个在两个金属层之间具有可记录层的存储器单元，每个存储单元被构造和设计成在施加初始化信号时从第一状态改变到第二状态，并且从第二状态变为第三状态 在应用写入信号时。 对于施加在两个金属层两侧的规定范围内的电压，存储单元在第一状态下具有比在第二状态下更低的电阻，并且在第二状态下具有比在第三状态中更高的电阻。

    Generating optical contrast using thin layers
    8.
    发明申请
    Generating optical contrast using thin layers 审中-公开
    使用薄层产生光学对比度

    公开(公告)号：US20070092681A1

    公开(公告)日：2007-04-26

    申请号：US11254496

    申请日：2005-10-20

    申请人： Geoffrey Shuy ,  Hsin-Cheng Lai ,  Cheng-Ji Lu

    发明人： Geoffrey Shuy ,  Hsin-Cheng Lai ,  Cheng-Ji Lu

    IPC分类号： B32B3/02

    CPC分类号： G11B7/26 ,  B32B27/08 ,  B32B27/365 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2255/28 ,  B32B2307/204 ,  B32B2307/412 ,  B32B2307/416 ,  B32B2429/02 ,  G11B7/00455 ,  G11B7/24038 ,  G11B7/2433 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/2432

    摘要： A recordable medium includes a recordable structure having a first layer and a second layer in which the first and second layers do not completely overlap, and the first and second layers combine upon application of a write power to cause a change in an optical property of the recordable structure with respect to a read beam. In some examples, at least one of the first and second layers includes discontinuous regions. In some examples, at least one of the first and second layers includes a contiguous region having a shape that forms holes. In some examples, the Debye length of at least one of the first and second layers is less than 5 nm, the Debye length being determined based on a charge carrier density in the layer.

    摘要翻译： 可记录介质包括具有第一层和第二层的可记录结构，其中第一层和第二层不完全重叠，并且第一层和第二层在施加写入功率时结合，从而导致第 相对于读取光束的可记录结构。 在一些示例中，第一和第二层中的至少一个包括不连续区域。 在一些示例中，第一层和第二层中的至少一层包括具有形成孔的形状的邻接区域。 在一些示例中，第一层和第二层中的至少一层的德拜长度小于5nm，德拜长度基于该层中的电荷载流子密度来确定。

    Multiple recording structures for optical recording
    9.
    发明申请
    Multiple recording structures for optical recording 审中-公开
    用于光学记录的多重记录结构

    公开(公告)号：US20070091757A1

    公开(公告)日：2007-04-26

    申请号：US11255069

    申请日：2005-10-20

    申请人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai

    发明人： Geoffrey Shuy ,  Cheng-Ji Lu ,  Hsin-Cheng Lai

    IPC分类号： G11B20/10 ,  G11B3/70

    CPC分类号： G11B7/243 ,  G11B7/24038 ,  G11B2007/0013

    摘要： A recordable medium includes a first recordable structure, a second recordable structure, and a spacer layer positioned between the first and second recordable structures. The first recordable structure has a transmissivity with respect to a read beam that increases upon application of a write power to the first recordable structure. The second recordable structure has an optical property that changes upon application of a write power to the second recordable structure.

    摘要翻译： 可记录介质包括第一可记录结构，第二可记录结构和位于第一和第二可记录结构之间的间隔层。 第一可记录结构相对于在向第一可记录结构施加写入功率而增加的读取光束具有透射率。 第二可记录结构具有在向第二可记录结构施加写入功率时改变的光学特性。

    Recordable electrical memory
    10.
    发明授权
    Recordable electrical memory 有权
    可记录电气记忆

    公开(公告)号：US07859883B2

    公开(公告)日：2010-12-28

    申请号：US11855537

    申请日：2007-09-14

    申请人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    发明人： Geoffrey Wen-Tai Shuy ,  Hsin-Cheng Lai

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5664 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/77 ,  Y10T29/41

    摘要： A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range.

    摘要翻译： 存储器件包括多个存储单元，每个存储单元包括两个金属层之间的可记录层，该可记录层包括第一子单元和第二子单元。 每个存储器单元被构造和设计成在施加初始化信号时从原始状态改变为初始化状态，从施加第一写信号时的初始化状态到第一内接状态，并且从初始状态到初始化状态 在施加第二写入信号时第二内接状态。 当处于初始化状态时，存储单元具有电阻状的电流 - 电压（IV）特性，处于初始化状态时为二极管状的IV特性，当处于第一和第二内接状态时为电阻状IV特性， 电压在预定范围内。