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公开(公告)号：US20070092684A1
公开(公告)日：2007-04-26
申请号：US11255070
申请日：2005-10-20
申请人： Geoffrey Wen-Tai Shuy , Cheng-Ji Lu , Hsin-Cheng Lai , Fang-Yu Lee , Ko-Fu Yen
发明人： Geoffrey Wen-Tai Shuy , Cheng-Ji Lu , Hsin-Cheng Lai , Fang-Yu Lee , Ko-Fu Yen
IPC分类号： B32B3/02
CPC分类号： G11B7/24038 , G11B7/2433 , G11B7/2531 , G11B7/2534 , G11B7/2578 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/2432 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716
摘要： A recordable medium includes an inscription layer and a contrast enhancing layer. The inscription layer has at least two sub-layers that combine upon application of a write power, the inscription layer having a reflectivity R1 before application of the write power and a reflectivity R2 after application of the write power. The contrast enhancing layer does not combine with the sub-layers of the inscription layer upon application of the write power. The contrast enhancing layer and the inscription layer together have a reflectivity R3 before application of the write power and a reflectivity R4 after application of the write power, and |R4−R3|>|R2−R1|.
摘要翻译： 可记录介质包括刻录层和对比度增强层。 刻录层具有在施加写入功率时组合的至少两个子层，在施加写入功率之前具有反射率R1的刻录层和在施加写入功率之后的反射率R2。 在施加写入功率时，对比度增强层不与刻录层的子层组合。 在施加写入功率之前，对比度增强层和刻录层一起具有反射率R3，并且在施加写入功率之后具有反射率R4，并且| R4-R3 |> | R2-R1 |。
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公开(公告)号：US20080285337A1
公开(公告)日：2008-11-20
申请号：US11855532
申请日：2007-09-14
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/33 , G11C2213/77 , Y10T29/41
摘要： A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.
摘要翻译： 存储器件包括每个在两个金属层之间具有可记录层的存储器单元，每个存储单元被构造和设计成在施加初始化信号时从第一状态改变到第二状态，并且从第二状态变为第三状态 在应用写入信号时。 对于施加在两个金属层两侧的规定范围内的电压，存储单元在第一状态下具有比在第二状态下更低的电阻，并且在第二状态下具有比在第三状态中更高的电阻。
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公开(公告)号：US07813158B2
公开(公告)日：2010-10-12
申请号：US11855532
申请日：2007-09-14
IPC分类号： G11C11/00
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/33 , G11C2213/77 , Y10T29/41
摘要： A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.
摘要翻译： 存储器件包括每个在两个金属层之间具有可记录层的存储器单元，每个存储单元被构造和设计成在施加初始化信号时从第一状态改变到第二状态，并且从第二状态变为第三状态 在应用写入信号时。 对于施加在两个金属层两侧的规定范围内的电压，存储单元在第一状态下具有比在第二状态下更低的电阻，并且在第二状态下具有比在第三状态中更高的电阻。
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公开(公告)号：US07859883B2
公开(公告)日：2010-12-28
申请号：US11855537
申请日：2007-09-14
IPC分类号： G11C11/00
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/33 , G11C2213/77 , Y10T29/41
摘要： A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range.
摘要翻译： 存储器件包括多个存储单元，每个存储单元包括两个金属层之间的可记录层，该可记录层包括第一子单元和第二子单元。 每个存储器单元被构造和设计成在施加初始化信号时从原始状态改变为初始化状态，从施加第一写信号时的初始化状态到第一内接状态，并且从初始状态到初始化状态 在施加第二写入信号时第二内接状态。 当处于初始化状态时，存储单元具有电阻状的电流 - 电压（IV）特性，处于初始化状态时为二极管状的IV特性，当处于第一和第二内接状态时为电阻状IV特性， 电压在预定范围内。
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公开(公告)号：US20080285329A1
公开(公告)日：2008-11-20
申请号：US11855537
申请日：2007-09-14
IPC分类号： G11C11/21
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/33 , G11C2213/77 , Y10T29/41
摘要： A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range.
摘要翻译： 存储器件包括多个存储单元，每个存储单元包括两个金属层之间的可记录层，该可记录层包括第一子单元和第二子单元。 每个存储器单元被构造和设计成在施加初始化信号时从原始状态改变为初始化状态，从施加第一写信号时的初始化状态到第一内接状态，并且从初始状态到初始化状态 在施加第二写入信号时第二内接状态。 当处于初始化状态时，存储单元具有电阻状的电流 - 电压（IV）特性，处于初始化状态时为二极管状的IV特性，当处于第一和第二内接状态时为电阻状IV特性， 电压在预定范围内。
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公开(公告)号：US08525441B2
公开(公告)日：2013-09-03
申请号：US13312902
申请日：2011-12-06
IPC分类号： H05B37/02
CPC分类号： H05B37/00 , H05B33/0845 , Y02B20/341
摘要： A device is designed for channeling electricity to a lamp, and adjusts downwards the amount of power channeled to the lamp as a function of available electrical energy in the source. In so doing, a reduction in the available energy in the source causes a less proportionate reduction in luminosity of the lamp. This might be accomplished by passing the electricity through a passive network of resistors and diodes on its way down to the lamp. In one example, the electrical energy source may be a battery that is powered by one or more solar panels. In that case, the device may also perform the function of protecting the battery from being overly charged. It channels downwards a greater daily lamp's energy consumption than that of daily electrical charging from the solar panels, when the available battery energy is near its full capacity.
摘要翻译： 设备被设计用于将电力引导到灯，并且根据源中的可用电能来向下调节通向灯的功率的量。 在这样做时，源中的可用能量的减少导致灯的发光度成比例地降低。 这可以通过将电流通过电阻器和二极管的无源网络，直到灯的方式来实现。 在一个示例中，电能源可以是由一个或多个太阳能电池板供电的电池。 在这种情况下，该装置还可以执行保护电池不被过度充电的功能。 当可用的电池能量接近其全部容量时，它可以向下通向太阳能电池板每日充电的日常灯的能量消耗。
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公开(公告)号：US20120200235A1
公开(公告)日：2012-08-09
申请号：US13312902
申请日：2011-12-06
IPC分类号： H05B37/02
CPC分类号： H05B37/00 , H05B33/0845 , Y02B20/341
摘要： A device is designed for channeling electricity to a lamp, and adjusts downwards the amount of power channeled to the lamp as a function of available electrical energy in the source. In so doing, a reduction in the available energy in the source causes a less proportionate reduction in luminosity of the lamp. This might be accomplished by passing the electricity through a passive network of resistors and diodes on its way down to the lamp. In one example, the electrical energy source may be a battery that is powered by one or more solar panels. In that case, the device may also perform the function of protecting the battery from being overly charged. It channels downwards a greater daily lamp's energy consumption than that of daily electrical charging from the solar panels, when the available battery energy is near its full capacity.
摘要翻译： 设备被设计用于将电力引导到灯，并且根据源中的可用电能来向下调节通向灯的功率的量。 在这样做时，源中的可用能量的减少导致灯的发光度成比例地降低。 这可以通过将电流通过电阻器和二极管的无源网络，直到灯的方式来实现。 在一个示例中，电能源可以是由一个或多个太阳能电池板供电的电池。 在这种情况下，该装置还可以执行保护电池不被过度充电的功能。 当可用的电池能量接近其全部容量时，它可以向下通向太阳能电池板每日充电的日常灯的能量消耗。
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公开(公告)号：US07811880B2
公开(公告)日：2010-10-12
申请号：US11870215
申请日：2007-10-10
IPC分类号： H01L21/00
CPC分类号： G11C11/5664 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/33 , G11C2213/77 , Y10T29/41
摘要： A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers.
摘要翻译： 存储器件的存储单元是通过在衬底上形成第一电极，将光掩模定位在相对于衬底的第一位置，并且基于光掩模上的图案在第一电极上形成第一材料层来制造的。 光掩模位于相对于基板的第二位置，并且基于光掩模上的图案在第一材料层的上方形成第二材料层，第二材料层从第一材料层偏移，使得第一 存储单元的子单元包括第一材料层而不是第二材料层，并且存储单元的第二子单元包括第一和第二材料层。 第二电极形成在第一和第二材料层的上方。
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公开(公告)号：US07800898B2
公开(公告)日：2010-09-21
申请号：US12057811
申请日：2008-03-28
CPC分类号： H05K7/20154 , F21K9/20 , F21V29/51 , F21V29/677 , F21V29/74 , F21V29/83 , F21V29/89 , F21Y2105/10 , F21Y2115/10 , F28D15/0233 , F28D15/0275 , H01L2924/0002 , H05K7/20009 , H01L2924/00
摘要： A heat exchange structure includes a plurality of elongated air ducts. The heat exchange structure has an exterior heat exchange surface and interior heat exchange surfaces, the interior surfaces being in the elongated air ducts. The heat exchange structure includes a plurality of heat generators that are distributed on the exterior heat exchange surface along an elongated direction of the air ducts, in which air flowing in the air duct is heated successively by heat from the heat generators, and air flow in the air duct is enhanced by buoyancy of heated air.
摘要翻译： 热交换结构包括多个细长的空气管道。 热交换结构具有外部热交换表面和内部热交换表面，内表面在细长的空气管道中。 热交换结构包括沿着空气管道的细长方向分布在外部热交换表面上的多个热发生器，其中在空气管道中流动的空气依次通过来自发热体的热量加热，并且空气流入 通过加热空气的浮力来增强风道。
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公开(公告)号：US07651253B2
公开(公告)日：2010-01-26
申请号：US12057681
申请日：2008-03-28
IPC分类号： B60Q1/00
CPC分类号： F21V29/51 , F21K9/00 , F21K9/20 , F21S43/14 , F21S45/47 , F21S45/48 , F21V29/713 , F21V29/83 , F21V29/86 , F21V29/89 , F21V31/005 , F21W2131/103 , F21Y2105/10 , F21Y2115/10 , F28D1/0233 , F28D15/0233 , F28D15/0275 , F28F13/185 , F28F21/04 , H01L2924/0002 , H05K7/20009 , H05K7/20154 , Y10T29/4935 , H01L2924/00
摘要： A heat exchange structure includes elongated air ducts. Each air duct has a first opening and a second opening at two ends of the air duct to allow air to enter and exit the air duct, respectively. The heat exchange structure includes an exterior heat exchange surface and interior heat exchange surfaces, in which the exterior heat exchange surface is configured to receive thermal energy from heat generators that are mounted on the exterior heat exchange surface, and the exterior heat exchange surface dissipates a portion of the thermal energy received from the heat generators and transfers another portion of the thermal energy to the interior heat exchange surfaces. The interior heat exchange surfaces are in the elongated air ducts and configured to exchange thermal energy with air flowing in the air ducts, enhancing air flow in the air ducts by buoyancy of heated air.
摘要翻译： 热交换结构包括细长的空气管道。 每个空气管道在空气管道的两端具有第一开口和第二开口，以允许空气分别进入和离开空气管道。 热交换结构包括外部热交换表面和内部热交换表面，其中外部热交换表面构造成从安装在外部热交换表面上的热发生器接收热能，并且外部热交换表面消散一个 从热发生器接收的热能的一部分，并将热能的另一部分传递到内部热交换表面。 内部热交换表面位于细长的空气管道中并且被配置为与在空气管道中流动的空气交换热能，通过加热空气的浮力来增强空气管道中的空气流。
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