公开(公告)号：US06835606B2

公开(公告)日：2004-12-28

申请号：US10604858

申请日：2003-08-22

申请人： Chia-Tien Peng ,  Huan-Chao Wu

发明人： Chia-Tien Peng ,  Huan-Chao Wu

IPC分类号： H01L2100

CPC分类号： H01L29/04 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/78621 ,  H01L29/78675

摘要： A low temperature polysilicon thin film transistor and a method of forming the polysilicon layer inside the thin film transistor. An amorphous silicon layer is formed over a panel. The panel has a display region and a peripheral circuit region. A metallic layer is formed over a portion of the amorphous silicon layer in the peripheral circuit region. A crystallization process is performed to transform the amorphous silicon layer in the peripheral circuit region into a polysilicon layer. Thereafter, an excimer laser annealing process is performed to increase the grain size of the polysilicon layer in the peripheral circuit region and, at the same time, transform the amorphous silicon layer in the display region into a polysilicon layer. Since the average grain size of the polysilicon layer in the peripheral circuit region is larger, electron mobility is increased as demanded. Similarly, since the average grain size of the polysilicon layer in the display region is smaller, leakage current is decreased as demanded.

摘要翻译： 低温多晶硅薄膜晶体管和在薄膜晶体管内部形成多晶硅层的方法。 在面板上形成非晶硅层。 面板具有显示区域和外围电路区域。 在外围电路区域中的非晶硅层的一部分上形成金属层。 进行结晶处理以将外围电路区域中的非晶硅层转变为多晶硅层。 此后，进行准分子激光退火处理以增加外围电路区域中的多晶硅层的晶粒尺寸，同时将显示区域中的非晶硅层转变为多晶硅层。 由于外围电路区域中的多晶硅层的平均晶粒尺寸较大，所以电子迁移率根据需要增加。 类似地，由于显示区域中的多晶硅层的平均晶粒尺寸较小，所以泄漏电流按要求减小。

公开(公告)号：US20050199597A1

公开(公告)日：2005-09-15

申请号：US10709036

申请日：2004-04-08

申请人： I-Chang Tsao ,  Huan-Chao Wu ,  Wu-Hsiung Lin ,  Wen-Cheng Lin

发明人： I-Chang Tsao ,  Huan-Chao Wu ,  Wu-Hsiung Lin ,  Wen-Cheng Lin

IPC分类号： B23K26/00 ,  H01L21/324

CPC分类号： B23K26/03 ,  B23K37/00 ,  B23K37/047 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02675

摘要： A laser annealing apparatus is disclosed, which is adapted for a laser annealing process. The laser annealing apparatus comprises a laser-generating module, a resistance-measuring module, and a host circuit module, wherein the laser-generating module provides a laser beam to recrystallize an amorphous silicon thin film to form a polysilicon thin film. The resistance-measuring module is adapted for measuring the sheet resistance of the polysilicon thin film. Besides, the host circuit module is electrically coupled to and between the laser-generating module and the resistance-measuring module. The host circuit module outputs a feedback signal to the laser-generating module in accordance with the sheet resistance value. Then, the energy density of the laser beam is optimized. The laser annealing apparatus can improve the quality of the thin film, and increase the yield rate of the laser annealing process.

摘要翻译： 公开了一种适用于激光退火工艺的激光退火装置。 激光退火装置包括激光发生模块，电阻测量模块和主电路模块，其中激光产生模块提供激光束以重结晶非晶硅薄膜以形成多晶硅薄膜。 电阻测量模块适于测量多晶硅薄膜的薄层电阻。 此外，主电路模块电耦合到激光发生模块和电阻测量模块之间。 主机电路模块根据薄层电阻值向激光发生模块输出反馈信号。 然后，激光束的能量密度被优化。 激光退火装置可以提高薄膜的质量，并提高激光退火工艺的成品率。