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公开(公告)号：US08808522B2
公开(公告)日：2014-08-19
申请号：US13227277
申请日：2011-09-07
申请人： Fu-Hsing Lu , Jhu-Ling Zeng , Huan-Ping Teng
发明人： Fu-Hsing Lu , Jhu-Ling Zeng , Huan-Ping Teng
CPC分类号： C25D9/04 , C23C28/042 , C23C28/30 , C23C28/3455 , C25D11/026 , C25D11/16 , C25D11/26
摘要： A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.
摘要翻译： 通过等离子体电解氧化形成氧化膜的方法包括将作为具有导电氮化物膜的基板的阳极和阴极放置在温度范围为20℃至100℃的电解质中的第一步骤 并且向阳极和阴极施加50V至1000V的电压的第二步骤，以最终在阳极的导电氮化物膜的表面上形成氧化物膜。 氧化膜可以比现有技术更快地形成并且具有优异的结晶度。
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公开(公告)号：US20130056360A1
公开(公告)日：2013-03-07
申请号：US13227277
申请日：2011-09-07
申请人： Fu-Hsing LU , Jhu-Ling Zeng , Huan-Ping Teng
发明人： Fu-Hsing LU , Jhu-Ling Zeng , Huan-Ping Teng
CPC分类号： C25D9/04 , C23C28/042 , C23C28/30 , C23C28/3455 , C25D11/026 , C25D11/16 , C25D11/26
摘要： A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.
摘要翻译： 通过等离子体电解氧化形成氧化膜的方法包括将作为具有导电氮化物膜的基板的阳极和阴极放置在温度范围为20℃至100℃的电解质中的第一步骤 并且向阳极和阴极施加50V至1000V的电压的第二步骤，以最终在阳极的导电氮化物膜的表面上形成氧化物膜。 氧化膜可以比现有技术更快地形成并且具有优异的结晶度。
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