公开(公告)号：US07098100B1

公开(公告)日：2006-08-29

申请号：US11114152

申请日：2005-04-26

Applicant: Hui Min Li ,  Jung Wu Chien ,  Chao Hsi Chung ,  Ming Hung Lin

Inventor： Hui Min Li ,  Jung Wu Chien ,  Chao Hsi Chung ,  Ming Hung Lin

IPC: H01L21/8234

CPC classification number: H01L29/66181 ,  H01L27/10861

Abstract: The present invention discloses a trench capacitor formed in a trench in a semiconductor substrate. The trench capacitor comprises a bottom electrode positioned on a lower outer surface of the trench, a dielectric layer positioned on an inner surface of the bottom electrode, a top electrode positioned on the dielectric layer, a collar oxide layer positioned on an upper inner surface of the trench, a buried conductive strap positioned on the top electrode, and an interface layer made of silicon nitride positioned at the side of the buried conductive strap. The bottom electrode, the dielectric layer and the top electrode form a capacitive structure. The collar oxide layer includes a first block and a second block, and the height of the first block is larger than the height of the second block. The interface layer is positioned on a portion of the inner surface of the trench above the second block.

Abstract translation: 本发明公开了一种在半导体衬底的沟槽中形成的沟槽电容器。 所述沟槽电容器包括位于所述沟槽的下外表面上的底电极，位于所述底电极的内表面上的电介质层，位于所述电介质层上的顶电极，位于所述电介质层的上内表面上的环状氧化物层 沟槽，位于顶部电极上的埋入导电带，以及位于掩埋导电带侧面的由氮化硅制成的界面层。 底部电极，电介质层和顶部电极形成电容结构。 环状氧化物层包括第一块和第二块，并且第一块的高度大于第二块的高度。 界面层位于第二块上方的沟槽的内表面的一部分上。

公开(公告)号：US20080032471A1

公开(公告)日：2008-02-07

申请号：US11580807

申请日：2006-10-13

Applicant: Wen-Shuo Kuo ,  Chao-Hsi Chung ,  Yung Yao Lee ,  Hui-Min Li

Inventor： Wen-Shuo Kuo ,  Chao-Hsi Chung ,  Yung Yao Lee ,  Hui-Min Li

IPC: H01L21/8242

CPC classification number: H01L21/76224 ,  H01L27/1087

Abstract: A method for manufacturing a shallow trench isolation structure in a deep trench and application thereof are provided, wherein the deep trench having an upper electrode and an insulation layer on the upper electrode is formed in a substrate which has a pad insulation layer. The method comprises the following steps: forming a hard mask on the first insulation layer, doping a first portion of the hard mask, removing the undoped portion of the hard mask to expose a portion of the first insulation layer and reserve the first portion of the hard mask, removing the exposed portion of the first insulation layer to expose a portion of the upper electrode, and forming a conductive layer on the exposed portion of the upper electrode wherein a predetermined distance exists between the upper surface of the conductive layer and the pad insulation layer.

Abstract translation: 提供一种在深沟槽中制造浅沟槽隔离结构的方法及其应用，其中在具有衬垫绝缘层的衬底中形成具有上电极和上电极上的绝缘层的深沟槽。 该方法包括以下步骤：在第一绝缘层上形成硬掩模，掺杂硬掩模的第一部分，去除硬掩模的未掺杂部分以暴露第一绝缘层的一部分并保留第一绝缘层的第一部分 去除所述第一绝缘层的暴露部分以暴露所述上电极的一部分，以及在所述上电极的暴露部分上形成导电层，其中在所述导电层的所述上表面和所述焊盘之间存在预定距离 绝缘层。