公开(公告)号：US08324612B2

公开(公告)日：2012-12-04

申请号：US11151276

申请日：2005-06-14

申请人： Hun-Jung Lee ,  Jae-Bon Koo

发明人： Hun-Jung Lee ,  Jae-Bon Koo

IPC分类号： H01L35/24

CPC分类号： H01L51/105 ,  H01L27/3244 ,  H01L51/0545

摘要： A thin film transistor (TFT), a method of fabricating the TFT, and a flat panel display having the TFT, wherein the TFT includes a substrate; a gate electrode provided on the substrate; a gate insulating layer provided on the gate electrode; a source electrode and a drain electrode provided on the gate insulating layer and insulated from the gate electrode; and an organic semiconductor layer contacting the source and drain electrodes and insulated from the gate electrode.

摘要翻译： 薄膜晶体管（TFT），制造TFT的方法以及具有TFT的平板显示器，其中TFT包括基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 源电极和漏电极，设置在栅极绝缘层上并与栅电极绝缘; 以及与源极和漏极接触并与栅电极绝缘的有机半导体层。

公开(公告)号：US08130174B2

公开(公告)日：2012-03-06

申请号：US10922915

申请日：2004-08-23

申请人： Hun-Jung Lee ,  Jae-Bon Koo ,  Sang-Il Park

发明人： Hun-Jung Lee ,  Jae-Bon Koo ,  Sang-Il Park

IPC分类号： G09G3/30

CPC分类号： H01L27/3279 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5271 ,  H01L2251/5315

摘要： The present invention relates to an organic electroluminescent display device for preventing a voltage drop and a short between power supply elements by simultaneously forming a reflective film and a power supply element using a low resistance metal. The invention provides an organic electroluminescent display device comprising gate lines, data lines and a power supply element formed on an insulating substrate, a pixel region limited by the gate lines, the data lines and the power supply element, and pixels arranged on the pixel region and comprising of a reflective film and a pixel electrode, wherein the reflective film is formed on the same layer as the power supply element.

摘要翻译： 本发明涉及通过同时形成反射膜和使用低电阻金属的电源元件来防止电源元件之间的电压降和短路的有机电致发光显示装置。 本发明提供了一种有机电致发光显示装置，包括形成在绝缘基板上的栅极线，数据线和电源元件，由栅极线限定的像素区域，数据线和电源元件，以及排列在像素区域上的像素 并且包括反射膜和像素电极，其中反射膜形成在与电源元件相同的层上。

公开(公告)号：US20120052636A1

公开(公告)日：2012-03-01

申请号：US13289883

申请日：2011-11-04

申请人： Hyun-soo SHIN ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

发明人： Hyun-soo SHIN ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

IPC分类号： H01L21/336

CPC分类号： H01L29/78606 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/10 ,  H01L27/12 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

摘要翻译： 薄膜晶体管包括栅电极，栅电极上的第一绝缘层，栅电极上的半导体层，并通过第一绝缘层与栅电极分离，半导体层包括与栅电极相对应的沟道区， 源极区域和漏极区域，在半导体层上的氢扩散阻挡层，覆盖沟道区域的氢扩散阻挡层和暴露源极和漏极区域，以及在源极和漏极区域上以及在源极区域和漏极区域上的第二绝缘层 氢扩散阻挡层，使得氢扩散阻挡层位于第二绝缘层和沟道区之间。

公开(公告)号：US08076733B2

公开(公告)日：2011-12-13

申请号：US11526945

申请日：2006-09-25

申请人： Hun-Jung Lee ,  Sung-Jin Kim ,  Jong-Han Jeong

发明人： Hun-Jung Lee ,  Sung-Jin Kim ,  Jong-Han Jeong

IPC分类号： H01L27/088

CPC分类号： H01L51/105 ,  H01L51/0545

摘要： Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.

摘要翻译： 提供一种可降低源电极和漏电极与有机半导体层之间的接触电阻并且易于制造的有机TFT，具有有机TFT的平板显示装置以及制造有机TFT和平板显示装置的方法 有同样的 有机TFT包括： 底物; 形成在基板上的栅电极和阻挡层; 覆盖所述栅电极和所述阻挡层的栅极绝缘膜; 位于栅极绝缘膜上的源电极和漏电极; 分别位于源电极和漏电极上的辅助源电极和辅助漏电极; 以及与辅助源电极和辅助漏电极接触的有机半导体层。

公开(公告)号：US07777225B2

公开(公告)日：2010-08-17

申请号：US12120693

申请日：2008-05-15

申请人： Hun-jung Lee ,  Nam-choul Yang ,  Jae-kyeong Jeong ,  Hyun-soo Shin ,  Jin-seong Park ,  Jong-han Jeong ,  Yeon-gon Mo

发明人： Hun-jung Lee ,  Nam-choul Yang ,  Jae-kyeong Jeong ,  Hyun-soo Shin ,  Jin-seong Park ,  Jong-han Jeong ,  Yeon-gon Mo

IPC分类号： H01L31/00

CPC分类号： H01L27/3244 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/7869 ,  H01L51/5092 ,  H01L51/5234 ,  H01L51/5271

摘要： An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.

摘要翻译： 一种有机发光显示装置。 根据本发明实施例的有机发光显示装置利用N型驱动晶体管，因此具有与有机发光二极管的阴极电连接的驱动晶体管的漏电极，其中， 有机发光显示装置包括在阴极电极和有机发光层之间的金属薄膜。

公开(公告)号：US20100141645A1

公开(公告)日：2010-06-10

申请号：US12585966

申请日：2009-09-29

申请人： Sang-Moo Choi ,  Hun-Jung Lee ,  Su-Young Kim ,  Dong-Wook Choi

发明人： Sang-Moo Choi ,  Hun-Jung Lee ,  Su-Young Kim ,  Dong-Wook Choi

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/043

摘要： An organic light emitting display device capable of driving transistor threshold voltage compensation, including: pixels positioned in the intersections of scan lines and data lines, wherein each pixel comprises: a first transistor and a fourth transistor, connected at a common node, disposed between an anode of an OLED and a first power supply; a cathode of the OLED connected to a second power supply; a second transistor connected between a gate of the first transistor and a data line, and turned on when a scan signal is supplied to a scan line; a third transistor connected between the common node and the data line, and turned on when a scan signal is supplied to the scan line; a first capacitor connected between the gate of the first transistor and the anode of the OLED; and a second capacitor connected between the anode of the OLED and a predetermined voltage source.

摘要翻译： 一种能够驱动晶体管阈值电压补偿的有机发光显示装置，包括：位于扫描线和数据线的交点中的像素，其中每个像素包括：第一晶体管和第四晶体管，连接在公共节点处， OLED的阳极和第一电源; 连接到第二电源的OLED的阴极; 连接在第一晶体管的栅极和数据线之间的第二晶体管，当扫描信号被提供给扫描线时导通; 连接在公共节点和数据线之间的第三晶体管，当扫描信号被提供给扫描线时导通; 连接在第一晶体管的栅极和OLED的阳极之间的第一电容器; 以及连接在OLED的阳极和预定电压源之间的第二电容器。

公开(公告)号：US07667385B2

公开(公告)日：2010-02-23

申请号：US11249284

申请日：2005-10-13

申请人： Hun-Jung Lee ,  Jae-Bon Koo

发明人： Hun-Jung Lee ,  Jae-Bon Koo

IPC分类号： H01J1/62

CPC分类号： H01L51/0545 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L27/3276 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0052 ,  H01L51/0516

摘要： An organic thin film transistor (OTFT) and an organic electroluminescent display (OLED) device are disclosed. The OTFT includes a drain electrode, functioning as a pixel electrode (anode electrode) of an organic emission element, such that the manufacturing process of an OLED device is simplified. In one embodiment, the OLED device includes: i) a substrate comprising an emission region and a non-emission region, ii) an organic thin film transistor, which comprises, a gate electrode, source and drain electrodes respectively overlapping both side portions of the gate electrode, and a semiconductor layer, and is disposed in the non-emission region, and iii) an organic light emitting element comprising a lower electrode, an organic layer, and an upper electrode. In one embodiment, one of the source electrode and drain electrode of the OTFT extends to the emission region, the semiconductor layer has an opening exposing a portion of the extending electrode, and the exposed portion of the extending electrode acts as a lower electrode (pixel or anode electrode) of the organic light emitting element.

摘要翻译： 公开了有机薄膜晶体管（OTFT）和有机电致发光显示器（OLED）器件。 OTFT包括作为有机发光元件的像素电极（阳极电极）的漏电极，使得OLED器件的制造工艺简化。 在一个实施例中，OLED器件包括：i）包括发射区域和非发射区域的衬底，ii）有机薄膜晶体管，其包括栅电极，分别与 栅电极和半导体层，并且设置在非发射区域中，以及iii）包括下电极，有机层和上电极的有机发光元件。 在一个实施例中，OTFT的源电极和漏极之一延伸到发射区域，半导体层具有暴露延伸电极的一部分的开口，并且延伸电极的暴露部分用作下电极（像素 或阳极电极）。

公开(公告)号：US07652287B2

公开(公告)日：2010-01-26

申请号：US12222497

申请日：2008-08-11

申请人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

发明人： Jong-han Jeong ,  Jae-kyeong Jeong ,  Yeon-gon Mo ,  Jin-seong Park ,  Hun-jung Lee ,  Hyun-soo Shin

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/12

CPC分类号： H01L29/7869

摘要： A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括在基板上的N型氧化物半导体层，通过栅极电介质层与N型氧化物半导体层间隔开的栅电极，与N型氧化物半导体层的第一部分接触的源电极 氧化物半导体层，以及与N型氧化物半导体层的第二部分接触的漏电极。 第一和第二部分各自具有包含至少一个第一族元素的离子的掺杂区，并且掺杂区中的至少一个第一族元素的离子可具有小于N型的功函数 氧化物半导体材料。

公开(公告)号：US07551255B2

公开(公告)日：2009-06-23

申请号：US11486595

申请日：2006-07-13

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

摘要翻译： 一种有机发光显示装置，包括形成在基板上的柔性基板和多个薄膜晶体管（TFT）。 形成在基板上的多个TFT包括用于驱动像素的像素晶体管和用于驱动驱动电路的驱动电路晶体管，像素晶体管的沟道区的纵向方向与第 基板弯曲。 因此，可以使形成在柔性基板上的TFT的电性能的变化最小化，从而减小在TFT的沟道中流动的电流量的变化。

公开(公告)号：US07544534B2

公开(公告)日：2009-06-09

申请号：US11051326

申请日：2005-02-07

申请人： Hun-Jung Lee ,  Sang-Il Park

发明人： Hun-Jung Lee ,  Sang-Il Park

IPC分类号： H01L21/00

CPC分类号： H01L51/50 ,  G09G2300/0426 ,  G09G2320/0233 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/78603 ,  H01L51/5253

摘要： An OLED includes a substrate having a circuit region and a pixel region. At least one circuit Thin Film Transistor (TFT) and at least one pixel TFT are respectively arranged on the circuit region and the pixel region. Each TFT has a semiconductor layer, a gate electrode, a source electrode and a drain electrode. A pixel electrode is electrically connected to one of the source and drain electrodes of the pixel TFT. At least one silicon nitride layer is arranged between the source and drain electrodes and the substrate and is opened in the entire pixel region.

摘要翻译： OLED包括具有电路区域和像素区域的衬底。 至少一个电路薄膜晶体管（TFT）和至少一个像素TFT分别布置在电路区域和像素区域上。 每个TFT具有半导体层，栅电极，源电极和漏电极。 像素电极电连接到像素TFT的源极和漏极之一。 至少一个氮化硅层布置在源电极和漏电极与衬底之间并且在整个像素区域中被打开。