公开(公告)号：US20160126326A1

公开(公告)日：2016-05-05

申请号：US14715643

申请日：2015-05-19

申请人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

发明人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

IPC分类号： H01L29/417 ,  H01L29/45 ,  H01L23/522 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/41775 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.

摘要翻译： 半导体器件可以包括设置在有源区上的栅极图案和接触图案。 接触图案可以包括靠近栅极图案的凹陷部分和远离栅极图案的上升部分。 栅极图案可以包括栅极绝缘层和设置在栅极绝缘层上的栅电极。 凹部的上表面可以比上升部的上表面低。

公开(公告)号：US09250003B2

公开(公告)日：2016-02-02

申请号：US13382994

申请日：2010-08-06

申请人： Sangoh Kim ,  Sungil Park ,  Namgi Lee

发明人： Sangoh Kim ,  Sungil Park ,  Namgi Lee

IPC分类号： G05B15/00 ,  F25D11/00 ,  F25D29/00 ,  G08C17/00 ,  F25D25/04

CPC分类号： F25D11/00 ,  F25B2600/07 ,  F25D25/04 ,  F25D29/003 ,  F25D2400/38 ,  G08C17/00 ,  G08C2201/50

摘要： A robot refrigerator and a robot refrigerator system are provided. The robot refrigerator is remotely controlled. The robot refrigerator generates image information from a surrounding image and transmits the generated image information to a wireless communication device. The wireless communication device remotely controls the robot refrigerator, or monitors or remotely controls the robot refrigerator in real time, so that the robot refrigerator easily avoids an obstacle, and thus, minimizes a movement time of the robot refrigerator. Thus, user convenience and system reliability is improved.

摘要翻译： 提供机器人冰箱和机器人冰箱系统。 机器人冰箱是远程控制的。 机器人冰箱从周围图像生成图像信息，并将生成的图像信息发送到无线通信装置。 无线通信装置对机器人冰箱进行远程控制，或实时监视或远程控制机器人冰箱，使得机器人冰箱易于避免障碍物，从而最小化机器人冰箱的移动时间。 因此，提高了用户便利性和系统可靠性。

公开(公告)号：US09171845B2

公开(公告)日：2015-10-27

申请号：US14698338

申请日：2015-04-28

申请人： Sung-Dae Suk ,  Changwoo Oh ,  Sungil Park

发明人： Sung-Dae Suk ,  Changwoo Oh ,  Sungil Park

IPC分类号： H01L31/119 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/0922

摘要： Semiconductor devices including a first transistor and a second transistor are integrated on a substrate. Each of the first and second transistors include a nano-sized active region including source and drain regions provided in respective end portions of the nano-sized active region and a channel forming region provided between the source and drain regions. The source and drain regions of the first transistor have the same conductivity type as those of the second transistor, and the second transistor has a threshold voltage lower than that of the first transistor. The channel forming region of the second transistor may include a homogeneously doped region, whose conductivity type is the same as the source and drain regions of the second transistor and is different from the channel forming region of the first transistor.

摘要翻译： 包括第一晶体管和第二晶体管的半导体器件集成在基板上。 第一和第二晶体管中的每一个包括纳米尺寸的有源区，其包括设置在纳米尺寸有源区的相应端部中的源极和漏极区以及设置在源极和漏极区之间的沟道形成区。 第一晶体管的源极和漏极区域具有与第二晶体管相同的导电类型，并且第二晶体管具有低于第一晶体管的阈值电压的阈值电压。 第二晶体管的沟道形成区域可以包括均匀掺杂区域，其导电类型与第二晶体管的源极和漏极区域相同，并且与第一晶体管的沟道形成区域不同。

公开(公告)号：US20150243664A1

公开(公告)日：2015-08-27

申请号：US14698338

申请日：2015-04-28

申请人： Sung-Dae SUK ,  Changwoo Oh ,  Sungil Park

发明人： Sung-Dae SUK ,  Changwoo Oh ,  Sungil Park

IPC分类号： H01L27/092

CPC分类号： H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/0922

摘要： Semiconductor devices including a first transistor and a second transistor are integrated on a substrate. Each of the first and second transistors include a nano-sized active region including source and drain regions provided in respective end portions of the nano-sized active region and a channel forming region provided between the source and drain regions. The source and drain regions of the first transistor have the same conductivity type as those of the second transistor, and the second transistor has a threshold voltage lower than that of the first transistor. The channel forming region of the second transistor may include a homogeneously doped region, whose conductivity type is the same as the source and drain regions of the second transistor and is different from the channel forming region of the first transistor.

摘要翻译： 包括第一晶体管和第二晶体管的半导体器件集成在基板上。 第一和第二晶体管中的每一个包括纳米尺寸的有源区，其包括设置在纳米尺寸有源区的相应端部中的源极和漏极区以及设置在源极和漏极区之间的沟道形成区。 第一晶体管的源极和漏极区域具有与第二晶体管相同的导电类型，并且第二晶体管具有低于第一晶体管的阈值电压的阈值电压。 第二晶体管的沟道形成区域可以包括均匀掺杂区域，其导电类型与第二晶体管的源极和漏极区域相同，并且与第一晶体管的沟道形成区域不同。

公开(公告)号：US09048120B2

公开(公告)日：2015-06-02

申请号：US14088650

申请日：2013-11-25

申请人： Sung-Dae Suk ,  Changwoo Oh ,  Sungil Park

发明人： Sung-Dae Suk ,  Changwoo Oh ,  Sungil Park

IPC分类号： H01L31/119 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/0922

摘要： Semiconductor devices including a first transistor and a second transistor are integrated on a substrate. Each of the first and second transistors include a nano-sized active region including source and drain regions provided in respective end portions of the nano-sized active region and a channel forming region provided between the source and drain regions. The source and drain regions of the first transistor have the same conductivity type as those of the second transistor, and the second transistor has a threshold voltage lower than that of the first transistor. The channel forming region of the second transistor may include a homogeneously doped region, whose conductivity type is the same as the source and drain regions of the second transistor and is different from the channel forming region of the first transistor.

公开(公告)号：US08973389B2

公开(公告)日：2015-03-10

申请号：US13395782

申请日：2010-08-12

申请人： Namgi Lee ,  Sungil Park ,  Sangoh Kim

发明人： Namgi Lee ,  Sungil Park ,  Sangoh Kim

IPC分类号： F25C1/24 ,  F25D25/02 ,  A47B51/00 ,  F25D25/04 ,  F25C5/18 ,  F25D11/00

CPC分类号： F25C5/185 ,  F25D11/00 ,  F25D2400/12

摘要： A mobile cooler having an ice maker includes: a main body having first and second spaces which are thermally blocked; a cooling device positioned at a lower portion of the main body and providing cooling air to the first and second spaces; a plurality of shelves installed in the first space; an ice tray installed in the second space; an ice bank positioned on a lower surface of the ice tray and detachably mounted in the main body; and a cover that covers an opening in which the ice bank is inserted.

摘要翻译： 具有制冰机的移动式冷却器包括：主体，其具有被热阻挡的第一和第二空间; 冷却装置，其定位在主体的下部，并向第一和第二空间提供冷却空气; 多个搁架安装在第一空间中; 安装在第二空间中的冰盘; 位于所述冰盘的下表面上并且可拆卸地安装在所述主体中的冰块; 以及覆盖其中插入有冰块的开口的盖。

公开(公告)号：US09536968B2

公开(公告)日：2017-01-03

申请号：US14715643

申请日：2015-05-19

申请人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

发明人： Sungil Park ,  Munhyeon Kim ,  Woonggi Kim ,  Keunhwi Cho ,  Hwichan Jun ,  Dongwon Kim ,  Daewon Ha

IPC分类号： H01L29/417 ,  H01L29/45 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/41775 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/78 ,  H01L29/785

摘要： Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.

摘要翻译： 半导体器件可以包括设置在有源区上的栅极图案和接触图案。 接触图案可以包括靠近栅极图案的凹陷部分和远离栅极图案的上升部分。 栅极图案可以包括栅极绝缘层和设置在栅极绝缘层上的栅电极。 凹部的上表面可以比上升部的上表面低。

公开(公告)号：US20120109378A1

公开(公告)日：2012-05-03

申请号：US13382994

申请日：2010-08-06

申请人： Sangoh Kim ,  Sungil Park ,  Namgi Lee

发明人： Sangoh Kim ,  Sungil Park ,  Namgi Lee

IPC分类号： G05B15/00

CPC分类号： F25D11/00 ,  F25B2600/07 ,  F25D25/04 ,  F25D29/003 ,  F25D2400/38 ,  G08C17/00 ,  G08C2201/50

摘要： Disclosed are a robot refrigerator and a robot refrigerator system. The robot refrigerator can be remotely controlled. The robot refrigerator generates image information from a surrounding image and transmits the generated image information to a wireless communication device. Then, the wireless communication device remotely controls the robot refrigerator, or monitors or remotely controls the robot refrigerator in real time, so that the robot refrigerator can easily avoid an obstacle to thus minimize a movement time of the robot refrigerator. Thus, user convenience and system reliability can be improved.

摘要翻译： 公开了机器人冰箱和机器人冰箱系统。 机器人冰箱可以远程控制。 机器人冰箱从周围图像生成图像信息，并将生成的图像信息发送到无线通信装置。 然后，无线通信装置对机器人冰箱进行远程控制，或实时监视或远程控制机器人冰箱，使机器人冰箱能够容易地避免障碍物，从而使机器人冰箱的移动时间最小化。 因此，可以提高用户便利性和系统可靠性。

公开(公告)号：US08119480B2

公开(公告)日：2012-02-21

申请号：US12923593

申请日：2010-09-29

申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

公开(公告)号：US20110021014A1

公开(公告)日：2011-01-27

申请号：US12923593

申请日：2010-09-29

申请人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

发明人： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

摘要： A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

摘要翻译： 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。