公开(公告)号：US20120092062A1

公开(公告)日：2012-04-19

申请号：US13338716

申请日：2011-12-28

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01H37/76

CPC分类号： H01L22/22 ,  G01R31/2853 ,  H01L23/481 ,  H01L23/5258 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06596 ,  H01L2924/3011

摘要： A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

摘要翻译： 半导体系统包括控制器; 包括堆叠在所述控制器上的多个层叠半导体芯片的半导体器件以及被配置为共同地将信号传送到所述多个堆叠的半导体芯片的多个穿硅通孔（TSV） 以及缺陷信息传送TSV，被配置为将从半导体芯片中的至少一个依次输出的TSV缺陷信息传送到控制器，其中，所述控制器包括：多个第一修复熔丝单元，被配置为基于所述TSV缺陷信息来设置第一熔丝信息 ; 以及多个第一TSV选择单元，被配置为响应于所述第一熔丝信息选择性地驱动所述TSV。

公开(公告)号：US20110006391A1

公开(公告)日：2011-01-13

申请号：US12649452

申请日：2009-12-30

申请人： Jeong-Woo LEE ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo LEE ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/525 ,  H01L23/535 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L23/5258 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/3011

摘要： A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

摘要翻译： 半导体器件包括多个堆叠的半导体芯片; 以及包括第一TSV和冗余TSV的多个穿硅通孔（TSV），并且被配置为共同地将信号传送到多个堆叠的半导体芯片。 半导体芯片中的至少一个包括多个修复熔丝单元，其被配置为存储关于TSV的至少一个缺陷的缺陷信息; 以及分配给各个TSV的多个锁存单元，并被配置为存储指示至少一个TSV缺陷并从多个修复熔丝单元输出的多个信号。

公开(公告)号：US07498866B2

公开(公告)日：2009-03-03

申请号：US11648330

申请日：2006-12-29

申请人： Hyang Hwa Choi

发明人： Hyang Hwa Choi

IPC分类号： G05F1/10 ,  G05F3/02

CPC分类号： G11C11/4074 ,  G11C5/145 ,  G11C11/4085 ,  H02M3/073

摘要： A high voltage pumping device is provided which includes a first high voltage detector for detecting a level of a high voltage, and generating a first pumping enable signal which is enabled when the high voltage is lower than a predetermined reference voltage, a pumping control signal generator for generating a pumping control signal adapted to control a high voltage pumping operation, in response to the first pumping enable signal and a first control signal which is enabled for a first period when an active mode is begun, an oscillator for generating a predetermined oscillation signal in response to the pumping control signal, and a pumping unit for pumping the high voltage to a predetermined level in response to the oscillation signal supplied from the oscillator. The high voltage pumping device performs an initial high voltage pumping operation for a second period in response to the first control signal when the active mode is begun, and subsequently performs a high voltage pumping operation in the active mode in response to the first pumping enable signal when the high voltage is lower than the predetermined reference voltage.

摘要翻译： 提供一种高压泵浦装置，其包括用于检测高电压电平的第一高电压检测器，以及产生当高电压低于预定参考电压时使能的第一泵浦使能信号;泵送控制信号发生器 用于产生适于控制高压泵送操作的泵送控制信号，响应于所述第一泵激功能信号和在有效模式开始时能够进行第一周期的第一控制信号，用于产生预定振荡信号的振荡器 响应于泵送控制信号，以及泵送单元，用于响应于从振荡器提供的振荡信号将高电压泵送到预定电平。 当激活模式开始时，高电压抽吸装置响应于第一控制信号在第二时段内执行初始高压抽运操作，并且随后响应于第一泵送使能信号在激活模式下执行高压泵浦操作 当高电压低于预定参考电压时。

公开(公告)号：US20110001559A1

公开(公告)日：2011-01-06

申请号：US12614672

申请日：2009-11-09

申请人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

发明人： Sang-Hoon SHIN ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

IPC分类号： H01L25/00

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/3011

摘要： A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

摘要翻译： 半导体器件及其驱动方法可以快速检测半导体芯片通孔的故障，并使用分配给每个贯通半导体芯片通孔的锁存单元有效地修复故障。 半导体器件包括堆叠的多个半导体芯片，以及多个贯穿半导体芯片通孔，以共同地将信号传递到多个半导体芯片，其中每个半导体芯片包括分配给多个半导体芯片的多个锁存单元 通过半导体芯片通孔，并且每个半导体芯片的多个锁存单元构成包括多个通过半导体芯片通孔的边界扫描路径以顺序地传送测试数据。

公开(公告)号：US08698276B2

公开(公告)日：2014-04-15

申请号：US13338716

申请日：2011-12-28

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/52

CPC分类号： H01L22/22 ,  G01R31/2853 ,  H01L23/481 ,  H01L23/5258 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06596 ,  H01L2924/3011

摘要： A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

摘要翻译： 半导体系统包括控制器; 包括堆叠在所述控制器上的多个层叠半导体芯片的半导体器件以及被配置为共同地将信号传送到所述多个堆叠的半导体芯片的多个穿硅通孔（TSV） 以及缺陷信息传送TSV，被配置为将从半导体芯片中的至少一个依次输出的TSV缺陷信息传送到控制器，其中，所述控制器包括：多个第一修复熔丝单元，被配置为基于所述TSV缺陷信息来设置第一熔丝信息 ; 以及多个第一TSV选择单元，被配置为响应于所述第一熔丝信息选择性地驱动所述TSV。

公开(公告)号：US08171358B2

公开(公告)日：2012-05-01

申请号：US12614672

申请日：2009-11-09

申请人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

发明人： Sang-Hoon Shin ,  Hyung-Dong Lee ,  Jeong-Woo Lee ,  Hyang-Hwa Choi

IPC分类号： G01R31/28 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/3011

摘要： A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

摘要翻译： 半导体器件及其驱动方法可以快速检测半导体芯片通孔的故障，并使用分配给每个贯通半导体芯片通孔的锁存单元有效地修复故障。 半导体器件包括堆叠的多个半导体芯片，以及多个贯穿半导体芯片通孔，以共同地将信号传递到多个半导体芯片，其中每个半导体芯片包括分配给多个半导体芯片的多个锁存单元 通过半导体芯片通孔，并且每个半导体芯片的多个锁存单元构成包括多个通过半导体芯片通孔的边界扫描路径以顺序地传送测试数据。

公开(公告)号：US08110892B2

公开(公告)日：2012-02-07

申请号：US12649452

申请日：2009-12-30

申请人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

发明人： Jeong-Woo Lee ,  Hyung-Dong Lee ,  Sang-Hoon Shin ,  Hyang-Hwa Choi

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L22/22 ,  H01L23/481 ,  H01L23/5258 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/3011

摘要： A semiconductor device includes a plurality of stacked semiconductor chips; and a plurality of through-silicon vias (TSVs) including first TSVs and redundant TSVs and configured to commonly transfer a signal to the plurality of stacked semiconductor chips. At least one of the semiconductor chips includes a plurality of repair fuse units configured to store defect information as to at least one defect of the TSVs; and a plurality of latch units allocated to the respective TSVs and configured to store a plurality of signals indicating at least one TSV defect and outputted from the plurality of repair fuse units.

摘要翻译： 半导体器件包括多个堆叠的半导体芯片; 以及包括第一TSV和冗余TSV的多个穿硅通孔（TSV），并且被配置为共同地将信号传送到多个堆叠的半导体芯片。 半导体芯片中的至少一个包括多个修复熔丝单元，其被配置为存储关于TSV的至少一个缺陷的缺陷信息; 以及分配给各个TSV的多个锁存单元，并被配置为存储指示至少一个TSV缺陷并从多个修复熔丝单元输出的多个信号。

公开(公告)号：US20070241808A1

公开(公告)日：2007-10-18

申请号：US11648330

申请日：2006-12-29

申请人： Hyang Hwa Choi

发明人： Hyang Hwa Choi

IPC分类号： G05F1/10

CPC分类号： G11C11/4074 ,  G11C5/145 ,  G11C11/4085 ,  H02M3/073

摘要： A high voltage pumping device is provided which includes a first high voltage detector for detecting a level of a high voltage, and generating a first pumping enable signal which is enabled when the high voltage is lower than a predetermined reference voltage, a pumping control signal generator for generating a pumping control signal adapted to control a high voltage pumping operation, in response to the first pumping enable signal and a first control signal which is enabled for a first period when an active mode is begun, an oscillator for generating a predetermined oscillation signal in response to the pumping control signal, and a pumping unit for pumping the high voltage to a predetermined level in response to the oscillation signal supplied from the oscillator. The high voltage pumping device performs an initial high voltage pumping operation for a second period in response to the first control signal when the active mode is begun, and subsequently performs a high voltage pumping operation in the active mode in response to the first pumping enable signal when the high voltage is lower than the predetermined reference voltage.

摘要翻译： 提供一种高压泵浦装置，其包括用于检测高电压电平的第一高电压检测器，以及产生当高电压低于预定参考电压时使能的第一泵浦使能信号;泵送控制信号发生器 用于产生适于控制高压泵送操作的泵送控制信号，响应于所述第一泵激功能信号和在有效模式开始时能够进行第一周期的第一控制信号，用于产生预定振荡信号的振荡器 响应于泵送控制信号，以及泵送单元，用于响应于从振荡器提供的振荡信号将高电压泵送到预定电平。 当激活模式开始时，高电压抽吸装置响应于第一控制信号在第二时段内执行初始高压抽运操作，并且随后响应于第一泵送使能信号在激活模式下执行高压泵浦操作 当高电压低于预定参考电压时。