公开(公告)号：US20090197365A1

公开(公告)日：2009-08-06

申请号：US12320097

申请日：2009-01-16

申请人： Gi-Bum Kim ,  Hyun-Pil Noh

发明人： Gi-Bum Kim ,  Hyun-Pil Noh

IPC分类号： H01L21/70 ,  H01L21/306

CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

摘要： Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate.

摘要翻译： 可以提供一种处理方法，以消除在基板的表面上产生的缺陷，使用该处理方法制造图像传感器的方法，以及由其制造的图像传感器。 处理方法可以包括提供包括表面缺陷的半导体衬底，为半导体衬底的表面提供化学溶液，并且通过消耗半导体衬底的表面并在半导体衬底上形成化学氧化物层来去除表面缺陷。

公开(公告)号：US20130134520A1

公开(公告)日：2013-05-30

申请号：US13611759

申请日：2012-09-12

申请人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

发明人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

IPC分类号： H01L27/088

CPC分类号： H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

摘要翻译： 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。

公开(公告)号：US08093089B2

公开(公告)日：2012-01-10

申请号：US12662453

申请日：2010-04-19

申请人： Hyun-Pil Noh

发明人： Hyun-Pil Noh

IPC分类号： H01L21/00 ,  H01L21/8232 ,  H01L21/335 ,  H01L21/8222 ,  H01L21/331 ,  H01L21/76

CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L29/1083 ,  H01L29/66575

摘要： Method of manufacturing image sensors having a plurality of gettering regions. In the method, a gate electrode may be formed on a semiconductor substrate. A source/drain region may be formed in the semiconductor substrate to be overlapped with the gate electrode. A gettering region may be formed in the semiconductor substrate to be adjacent to the source/drain region.

摘要翻译： 制造具有多个吸气区域的图像传感器的方法。 在该方法中，可以在半导体衬底上形成栅电极。 源极/漏极区域可以形成在半导体衬底中以与栅电极重叠。 吸收区域可以形成在半导体衬底中以与源极/漏极区域相邻。

公开(公告)号：US20100267184A1

公开(公告)日：2010-10-21

申请号：US12662453

申请日：2010-04-19

申请人： Hyun-Pil Noh

发明人： Hyun-Pil Noh

IPC分类号： H01L21/322 ,  H01L31/18

CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L29/1083 ,  H01L29/66575

摘要： Method of manufacturing image sensors having a plurality of gettering regions. In the method, a gate electrode may be formed on a semiconductor substrate. A source/drain region may be formed in the semiconductor substrate to be overlapped with the gate electrode. A gettering region may be formed in the semiconductor substrate to be adjacent to the source/drain region.

摘要翻译： 制造具有多个吸气区域的图像传感器的方法。 在该方法中，可以在半导体衬底上形成栅电极。 源极/漏极区域可以形成在半导体衬底中以与栅电极重叠。 吸收区域可以形成在半导体衬底中以与源极/漏极区域相邻。

公开(公告)号：US20070037312A1

公开(公告)日：2007-02-15

申请号：US11502445

申请日：2006-08-11

申请人： Hyun-Pil Noh

发明人： Hyun-Pil Noh

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Example embodiments relate to an image sensor and a fabrication method thereof, capable of reducing dark current and a fabrication method thereof. The image sensor may include a semiconductor substrate including an active region defined by an isolation layer, a photoelectric-conversion region and a charge-movement-prevention region formed at an interface between the photoelectric-conversion region and the isolation layer.

摘要翻译： 示例性实施例涉及能够减少暗电流的图像传感器及其制造方法及其制造方法。 图像传感器可以包括半导体衬底，其包括由光电转换区域和隔离层之间的界面处形成的由隔离层，光电转换区域和电荷移动防止区域限定的有源区域。

公开(公告)号：US07855149B2

公开(公告)日：2010-12-21

申请号：US12320097

申请日：2009-01-16

申请人： Gi-Bum Kim ,  Hyun-Pil Noh

发明人： Gi-Bum Kim ,  Hyun-Pil Noh

IPC分类号： H01L21/311

CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

摘要： Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate.

摘要翻译： 可以提供一种处理方法，以消除在基板的表面上产生的缺陷，使用该处理方法制造图像传感器的方法，以及由其制造的图像传感器。 处理方法可以包括提供包括表面缺陷的半导体衬底，为半导体衬底的表面提供化学溶液，并且通过消耗半导体衬底的表面并在半导体衬底上形成化学氧化物层来去除表面缺陷。

公开(公告)号：US20060186442A1

公开(公告)日：2006-08-24

申请号：US11329489

申请日：2006-01-11

申请人： Hyun-Pil Noh

发明人： Hyun-Pil Noh

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14683 ,  H01L27/14689 ,  H01L31/03529

摘要： An image sensor and a method for fabricating the image sensor are provided. The image sensor includes a doped layer of a first conductivity type formed in a photodiode region defined in a semiconductor substrate, a first epitaxial layer of a second conductivity type and a second epitaxial layer of the second conductivity type formed on the semiconductor substrate in which the doped layer has been formed. Moreover, the first epitaxial layer has a bandgap energy different from that of the second epitaxial layer.

摘要翻译： 提供了一种用于制造图像传感器的图像传感器和方法。 图像传感器包括形成在半导体衬底中限定的光电二极管区域中的第一导电类型的掺杂层，形成在半导体衬底上的第二导电类型的第一外延层和第二导电类型的第二外延层，其中 掺杂层已经形成。 此外，第一外延层具有与第二外延层不同的带隙能。

公开(公告)号：US08809990B2

公开(公告)日：2014-08-19

申请号：US13611759

申请日：2012-09-12

申请人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

发明人： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

IPC分类号： H01L21/70 ,  H01L29/66

CPC分类号： H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

摘要翻译： 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。

公开(公告)号：US08154097B2

公开(公告)日：2012-04-10

申请号：US12266856

申请日：2008-11-07

申请人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Hyun-Pil Noh

发明人： Hong-Ki Kim ,  Duck-Hyung Lee ,  Hyun-Pil Noh

IPC分类号： H01L31/09

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有传感器阵列区域的基板和形成在外围电路区域上的第一绝缘膜结构的外围电路区域，并且包括多个第一多层布线和形成在传感器阵列区域上的第二绝缘膜结构 并且包括多个第二多层布线。 多个第一多层布线的最上层布线比多个第二多层布线的最上层布线高。 第一绝缘膜结构包括各向同性蚀刻停止层，第二绝缘膜结构不包括各向同性蚀刻停止层。

公开(公告)号：US20090261443A1

公开(公告)日：2009-10-22

申请号：US12416703

申请日：2009-04-01

申请人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

发明人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643

摘要： A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.

摘要翻译： 共享像素型图像传感器，包括形成在半导体衬底中的共享浮动扩散区域; 第一和第二相邻的光电转换区域共享浮动扩散区域; 两个传输元件，分别将累积在第一和第二光电转换区域中的电荷交替地传送到共享浮动扩散区域; 用于输出共享浮动扩散区域的电荷的驱动元件; 形成在所述浮动扩散区上的第一接触; 形成在所述驱动元件上的第二触点; 以及连接第一和第二触点以电连接浮动扩散区域和驱动元件的局部电线，其中局部电线形成在比第一和第二触点的相应顶表面低的水平处。