Optical sensor interrogation system based on FDML wavelength swept laser
    2.
    发明授权
    Optical sensor interrogation system based on FDML wavelength swept laser 有权
    基于FDML波长扫描激光的光学传感器询问系统

    公开(公告)号:US08400640B2

    公开(公告)日:2013-03-19

    申请号:US12566403

    申请日:2009-09-24

    IPC分类号: G01B9/02

    摘要: Provided is an optical sensor interrogation system. The optical sensor interrogation system includes: a light source unit which matches round-trip time of light and wavelength tunable cycle time of light in a resonator and emits light; a sensing unit which receives an optical signal in which a center wavelength periodically tunes, from the light source unit and tunes the center wavelength of the optical signal according to physical changes applied from the outside; and a signal processing unit which receives the optical signal reflected from the sensing unit, detects data, and images the data. In particular, the light source unit includes a delaying unit which delays the round-trip time of light and a tunable filter which tunes the wavelength of light so as to match the round-trip time of light with the wavelength tunable cycle time of light. Accordingly, a Fourier domain mode locking (FDML) wavelength swept laser, which operates at speed of several tens kHz or above, is used as a light source so that strain of a fluid, which changes in a short time interval of 0.1 msec or below, is precisely measured and thus a real-time analysis may be performed at high speed.

    摘要翻译: 提供了一种光学传感器询问系统。 光传感器询问系统包括:光源单元,其匹配谐振器中的光的往返时间和波长可调周期时间,并发光; 感测单元,其从光源单元接收中心波长周期性调谐的光信号,并根据从外部施加的物理变化调谐光信号的中心波长; 以及信号处理单元,其接收从感测单元反射的光信号,检测数据并对数据进行成像。 特别地,光源单元包括延迟光的往返时间的延迟单元和调节光的波长的可调谐滤波器,以便匹配光的往返时间与光的波长可调周期时间。 因此,以几十kHz或更高速度运行的傅立叶域模式锁定(FDML)波长扫描激光器被用作光源,使得在0.1msec或更短的时间间隔内变化的流体应变 ,被精确测量,因此可以高速执行实时分析。

    DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node
    10.
    发明授权
    DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node 有权
    DRAM单元电容器在存储节点的选定部分上具有半球形晶体硅

    公开(公告)号:US06215143B1

    公开(公告)日:2001-04-10

    申请号:US09377156

    申请日:1999-08-19

    IPC分类号: H01L27108

    CPC分类号: H01L27/10852 H01L28/84

    摘要: A DRAM cell capacitor is provided, having HSG (hemispherical grain) silicon disposed on a selected portion of a storage node. The capacitor resembles a solid cylindrical configuration having a top portion, a side wall, and a top edge portion sloped downward from the top portion to the side wall. HSG silicon is disposed only on the top portion and the side wall, but not on the sloped top edge portion.

    摘要翻译: 提供具有设置在存储节点的选定部分上的HSG(半球形晶粒)硅的DRAM单元电容器。 电容器类似于具有从顶部到侧壁向下倾斜的顶部,侧壁和顶部边缘部分的实心圆柱形构造。 HSG硅仅设置在顶部和侧壁上,而不是设置在倾斜的顶部边缘部分上。