-
公开(公告)号：US20050061758A1
公开(公告)日：2005-03-24
申请号：US10499678
申请日：2002-12-27
CPC分类号： F25D25/02 , A47F3/0443 , A47F2003/046 , F25D2317/0665
摘要： A storage apparatus is provided that comprises a display case part with an inside thereof being dividable into a plurality of zones, a supply duct that is connected to supply openings for supplying conditioning air for controlling environmental conditions to the plurality of zones respectively, and an exhaust duct that is connected to exhaust openings for taking in air from the plurality of zones. In this storage apparatus, conditioning air such as cold air or hot air is circulated in the respective zones, and the environmental conditions can be adjusted efficiently in zone basis. Therefore, in a storage apparatus equipped with an open-type display case part, it is possible to dispense with an air curtain covering the entire open side, so that a storage apparatus with a high storage capacity is provided.
摘要翻译： 一种存储装置，包括：显示壳体部分，其内部可分为多个区域;供应管道，连接到供应开口，分别用于向多个区域提供用于控制环境条件的调节空气;排气口 管道，其连接到用于从多个区域吸入空气的排气口。 在这种存储装置中，诸如冷空气或热空气的调节空气在各个区域中循环，并且可以基于区域有效地调整环境条件。 因此，在具有开放式显示壳体部件的存储装置中，可以省略覆盖整个开放侧的气幕，从而提供具有高存储容量的存储装置。
-
公开(公告)号：US06461939B1
公开(公告)日：2002-10-08
申请号：US09701280
申请日：2000-11-28
IPC分类号： H01L2146
CPC分类号： H01L21/76254
摘要： According to the present invention, there are provided an SO wafer wherein surface roughness of an SOI layer surface of the SOI wafer is 0.12 nm or less in terms of RMS value and/or interface roughness of an interface between the SOT layer and a buried oxide layer of the SOI wafer is 0.12 nm or less in terms of RMS value, and a method for producing an SOI wafer, which comprises mirror-polishing an SOI wafer, removing a native oxide film on a surface of the wafer or forming a thermal oxide film having a thickness of 300 nm or more on the surface and removing the thermal oxide film, and subjecting the wafer to a heat treatment in an atmosphere of 100% hydrogen or a mixed gas atmosphere of argon and/or nitrogen containing 10% or more of hydrogen by using a rapid heating and rapid cooling apparatus. Thus, there can be obtained an SOI wafer of high quality having surface roughness of the SOI layer surface and interface roughness of the SOI/BOX interface that affect extremely little on the fluctuation of device characteristics of MOS devices fabricated by using the SOI wafer, such as dielectric breakdown voltage, threshold voltage and carrier mobility, and a method for producing the same.
摘要翻译： 根据本发明，提供了一种SO晶片，其中SOI晶片的SOI层表面的表面粗糙度在SOT层和掩埋氧化物之间的界面的RMS值和/或界面粗糙度方面为0.12nm以下 SOI晶片的面积的RMS值为0.12nm以下，SOI晶片的制造方法，其包括对SOI晶片进行镜面抛光，去除晶片表面的自然氧化膜或形成热氧化物 在表面上具有300nm以上的厚度的膜，去除热氧化膜，并在100％氢气或含有10％以上的氩气和/或氮气的混合气体气氛中对晶片进行热处理 的氢气通过使用快速加热和快速冷却装置。 因此，可以获得具有SOI层表面的表面粗糙度和SOI / BOX界面的界面粗糙度的SOI晶片，其对通过使用SOI晶片制造的MOS器件的器件特性的波动影响极小，例如 作为介电击穿电压，阈值电压和载流子迁移率，以及其制造方法。
-
公开(公告)号：US07137438B2
公开(公告)日：2006-11-21
申请号：US10499678
申请日：2002-12-27
IPC分类号： A47F3/04
CPC分类号： F25D25/02 , A47F3/0443 , A47F2003/046 , F25D2317/0665
摘要： A storage apparatus is provided that comprises a display case part with an inside thereof being dividable into a plurality of zones, a supply duct that is connected to supply openings for supplying conditioning air for controlling environmental conditions to the plurality of zones respectively, and an exhaust duct that is connected to exhaust openings for taking in air from the plurality of zones. In this storage apparatus, conditioning air such as cold air or hot air is circulated in the respective zones, and the environmental conditions can be adjusted efficiently in zone basis. Therefore, in a storage apparatus equipped with an open-type display case part, it is possible to dispense with an air curtain covering the entire open side, so that a storage apparatus with a high storage capacity is provided.
摘要翻译： 一种存储装置，包括：显示壳体部分，其内部可分为多个区域;供应管道，连接到供应开口，分别用于向多个区域提供用于控制环境条件的调节空气;排气口 管道，其连接到用于从多个区域吸入空气的排气口。 在这种存储装置中，诸如冷空气或热空气的调节空气在各个区域中循环，并且可以基于区域有效地调整环境条件。 因此，在具有开放式显示壳体部件的存储装置中，可以省略覆盖整个开放侧的气幕，从而提供具有高存储容量的存储装置。
-
公开(公告)号：US06716722B1
公开(公告)日：2004-04-06
申请号：US09787038
申请日：2001-03-13
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/304 , H01L21/76256 , Y10T428/24777
摘要： There is provided a method of producing a bonded wafer comprising bonding a bond wafer and a base wafer via an oxide film or directly and then reducing thickness of the bond wafer, characterized in that the base wafer is a wafer produced by processes comprising slicing a silicon single crystal ingot, and then subjected at least to chamfering, lapping, etching, mirror polishing and cleaning, and the etching process is conducted by subjecting the wafer to alkali etching, and then acid etching, and an etching amount in the alkali etching is larger than an etching amount in the acid etching, and a chamfered part of the base wafer is subjected to a mirror finishing process after the etching, and a bonded wafer produced by the method. There can be provided a base wafers for a bonded wafer having good flatness wherein generation of particles from a chamfered part or a back surface is reduced in high productivity, and a bonded wafer wherein very few particles are generated, having SOI layer or silicon active layer excellent in flatness and thickness uniformity and a method of producing it.
摘要翻译： 提供了一种制造接合晶片的方法，包括通过氧化膜或直接接合接合晶片和基底晶片，然后减小接合晶片的厚度，其特征在于，基底晶片是通过以下步骤制造的晶片： 单晶锭，然后至少进行倒角，研磨，蚀刻，镜面抛光和清洗，并且通过对晶片进行碱蚀刻，然后进行酸蚀刻，并且在碱蚀刻中的蚀刻量较大，进行蚀刻工艺 比酸腐蚀中的蚀刻量高，并且在蚀刻之后对基底晶片的倒角部分进行镜面整理处理，以及通过该方法制造的接合晶片。 可以提供一种用于具有良好平坦度的接合晶片的基底晶片，其中以高生产率降低来自倒角部分或背面的颗粒的产生，以及其中产生极少颗粒的接合晶片，具有SOI层或硅有源层 平坦度和厚度均匀性优异的方法及其制造方法。
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
