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8 条记录 (耗时 0.015 秒)

    Comparator circuit and rotation detector
    1.
    发明授权
    Comparator circuit and rotation detector 有权
    比较电路和旋转检测器

    公开(公告)号：US07112959B2

    公开(公告)日：2006-09-26

    申请号：US11213763

    申请日：2005-08-30

    申请人： Ichiro Izawa ,  Hiroshi Okada

    发明人： Ichiro Izawa ,  Hiroshi Okada

    IPC分类号： G01B7/30 ,  H03D13/00

    CPC分类号： G01D5/24476 ,  G01P3/4802 ,  G01P3/488

    摘要： The comparator circuit includes an amplifier amplifying a voltage signal inputted from outside, a voltage dividing circuit dividing down a power supply voltage supplied from outside, thereby producing a reference voltage, a waveform dull circuit dulling the reference voltage, and a comparator comparing a voltage of the input voltage signal amplified by the amplifier with the reference voltage dulled by the waveform dull circuit.

    摘要翻译： 比较器电路包括放大从外部输入的电压信号的放大器，分压从外部供给的电源电压的分压电路，从而产生参考电压，使基准电压变钝的波形钝化电路，以及比较电压 由放大器放大的输入电压信号，其参考电压由波形钝化电路消隐。

    Comparator circuit and rotation detector
    5.
    发明申请
    Comparator circuit and rotation detector 有权

    公开(公告)号：US20060043966A1

    公开(公告)日：2006-03-02

    申请号：US11213763

    申请日：2005-08-30

    申请人： Ichiro Izawa ,  Hiroshi Okada

    发明人： Ichiro Izawa ,  Hiroshi Okada

    IPC分类号： G01B7/30

    CPC分类号： G01D5/24476 ,  G01P3/4802 ,  G01P3/488

    摘要： The comparator circuit includes an amplifier amplifying a voltage signal inputted from outside, a voltage dividing circuit dividing down a power supply voltage supplied from outside, thereby producing a reference voltage, a waveform dull circuit dulling the reference voltage, and a comparator comparing a voltage of the input voltage signal amplified by the amplifier with the reference voltage dulled by the waveform dull circuit.

    Device for detecting magnetism
    6.
    发明授权
    Device for detecting magnetism 失效
    用于检测磁性的装置

    公开(公告)号：US5005064A

    公开(公告)日：1991-04-02

    申请号：US233431

    申请日：1988-08-18

    申请人： Yoshimi Yoshino ,  Kenichi Ao ,  Ichiro Izawa ,  Toshikazu Arasuna

    发明人： Yoshimi Yoshino ,  Kenichi Ao ,  Ichiro Izawa ,  Toshikazu Arasuna

    IPC分类号： G01R33/09 ,  H01L27/22 ,  H01L43/08

    CPC分类号： G01R33/09 ,  H01L27/22 ,  H01L43/08

    摘要： According to this invention, a device for detecting magnetism comprises; a substrate, an interposed insulating layer containing impurities therein, formed on the substrate, and a ferromagnetic magnetoresistive element formed on the interposed layer, wherein at least a portion of the interposed layer on which the ferromagnetic magnetoresistive element is formed has a concentration of impurities of less than a predetermined value. Further, in the device of this invention, the surface of the layer interposed between the substrate and the ferromagnetic magnetoresistive element has a surface roughness of less than 120 and an angle between a contacting surface of a conductive wiring and the ferromagnetic magnetoresistive element and the surface of the interposed layer is less than 78 degrees. Therefore, a device wherein a deterioration of the quality film of the ferromagnetic magnetoresistive element can be avoided and a reduction of the ratio of the resistance variation of the ferromagnetic magnetoresistive element can be maintained at less than 10% can be obtained, and further, a device wherein the generation of noise can be effectively suppressed so that the device is highly sensitive to magnetism and has a high S/N ratio, and further, the breakdown ratio caused by wiring breakages is effectively reduced, can be obtained.

    Solid state image sensor and method for manufacturing the same
    7.
    发明授权
    Solid state image sensor and method for manufacturing the same 有权
    固态图像传感器及其制造方法

    公开(公告)号：US06677177B1

    公开(公告)日：2004-01-13

    申请号：US09721866

    申请日：2000-11-24

    申请人： Shin′ichiro Izawa

    发明人： Shin′ichiro Izawa

    IPC分类号： H01L2100

    CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14831

    摘要： A solid state image sensor that prevents a reduction of transfer efficiency even if pixel size is reduced. A first semiconductor region is formed on a semiconductor substrate and a second semiconductor region is formed on the first semiconductor region. A plurality of parallel isolation regions are arranged in the second semiconductor region at predetermined intervals. Depth of the isolation regions is less than the thickness of the second semiconductor region such that the potential of transfer regions in the second semiconductor region is affected by a potential barrier formed in first semiconductor region rather than a potential barrier formed around the isolation regions when the intervals between the isolation regions are relatively narrow.

    摘要翻译： 固态图像传感器，即使像素尺寸减小也能够防止传送效率的降低。 在半导体衬底上形成第一半导体区，在第一半导体区上形成第二半导体区。 多个平行隔离区域以预定的间隔布置在第二半导体区域中。 隔离区域的深度小于第二半导体区域的厚度，使得第二半导体区域中的转移区域的电位受到在第一半导体区域中形成的势垒的影响，而不是形成在隔离区域周围的势垒 隔离区之间的间隔相对较窄。