公开(公告)号：US08790503B2

公开(公告)日：2014-07-29

申请号：US13643721

申请日：2011-04-26

申请人： Ichiroh Ihara

发明人： Ichiroh Ihara

IPC分类号： C25D21/12 ,  C25D11/12 ,  C25D11/24

CPC分类号： G02B1/118 ,  C25D11/024 ,  C25D11/04 ,  C25D11/24

摘要： An anodized layer formation method includes: (a) providing an aluminum base or an aluminum film deposited on a support; anodization step (b) in which a forming voltage is increased to a predetermined first voltage level under a predetermined condition with a surface of the aluminum base or a surface of the aluminum film being kept in contact with an electrolytic solution, and thereafter, the forming voltage is maintained at the first voltage level for a predetermined period of time, whereby a porous alumina layer which has a minute recessed portion is formed; and etching step (c) in which, after step (b), the porous alumina layer is brought into contact with an etching solution, whereby the minute recessed portion is enlarged and a lateral surface of the minute recessed portion is sloped.

摘要翻译： 阳极氧化层形成方法包括：（a）提供沉积在载体上的铝基底或铝膜; 阳极氧化步骤（b），其中在铝基体的表面或铝膜的表面与电解液保持接触的情况下，在预定条件下将形成电压增加到预定的第一电压水平，然后，形成 电压保持在第一电压电平预定的时间段，由此形成具有微小凹陷部分的多孔氧化铝层; 以及蚀刻步骤（c），其中在步骤（b）之后，使多孔氧化铝层与蚀刻溶液接触，由此微小凹部扩大，并且微小凹陷部分的侧表面倾斜。

公开(公告)号：US20120213971A1

公开(公告)日：2012-08-23

申请号：US13504551

申请日：2010-11-04

申请人： Ichiroh Ihara

发明人： Ichiroh Ihara

IPC分类号： B32B3/30 ,  C25D5/48 ,  B29C33/56

CPC分类号： G02B1/118 ,  B29C33/42 ,  C25D11/045 ,  C25D11/12 ,  C25D11/16 ,  C25D11/24 ,  Y10T428/24479

摘要： A mold manufacturing method includes providing an aluminum base or an aluminum film; allowing passage of an electric current between a surface of the aluminum base and a counter electrode in an aqueous solution with the surface being a cathode, thereby forming a plurality of first recessed portions whose two-dimensional size viewed in a direction normal to the surface is not less than 200 nm and not more than 100 μm; thereafter, the step of anodizing the surface, thereby forming a porous alumina layer which has a plurality of second recessed portions whose two-dimensional size is not less than 10 nm and less than 500 nm over an inner surface of the plurality of first recessed portions and between the plurality of first recessed portions; and thereafter, bringing the porous alumina layer into contact with an etchant, thereby enlarging the plurality of second recessed portions of the porous alumina layer.

摘要翻译： 一种模具制造方法，包括提供铝基材或铝膜; 允许在表面为阴极的水溶液中在铝基体的表面和对电极之间通过电流，从而形成多个第一凹部，其在与该表面垂直的方向上观察的二维尺寸为 不小于200nm且不大于100μm; 此后，对表面进行阳极化处理，从而形成多个氧化铝层，该多孔氧化铝层在多个第一凹部的内表面上具有二维尺寸不小于10nm且小于500nm的多个第二凹部 并且在所述多个第一凹部之间; 然后使多孔氧化铝层与蚀刻剂接触，从而扩大多孔氧化铝层的多个第二凹部。

公开(公告)号：US07098976B2

公开(公告)日：2006-08-29

申请号：US10171651

申请日：2002-06-17

申请人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

发明人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

IPC分类号： G02F1/1335 ,  G02B5/122 ,  G02B5/124

CPC分类号： G02F1/133553 ,  G02B5/124 ,  G02F1/1334

摘要： A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.

公开(公告)号：US20130037412A1

公开(公告)日：2013-02-14

申请号：US13643721

申请日：2011-04-26

申请人： Ichiroh Ihara

发明人： Ichiroh Ihara

IPC分类号： C25D11/18

CPC分类号： G02B1/118 ,  C25D11/024 ,  C25D11/04 ,  C25D11/24

摘要： An anodized layer formation method includes: (a) providing an aluminum base or an aluminum film deposited on a support; anodization step (b) in which a forming voltage is increased to a predetermined first voltage level under a predetermined condition with a surface of the aluminum base or a surface of the aluminum film being kept in contact with an electrolytic solution, and thereafter, the forming voltage is maintained at the first voltage level for a predetermined period of time, whereby a porous alumina layer which has a minute recessed portion is formed; and etching step (c) in which, after step (b), the porous alumina layer is brought into contact with an etching solution, whereby the minute recessed portion is enlarged and a lateral surface of the minute recessed portion is sloped.

摘要翻译： 阳极氧化层形成方法包括：（a）提供沉积在载体上的铝基底或铝膜; 阳极氧化步骤（b），其中在铝基体的表面或铝膜的表面与电解液保持接触的情况下，在预定条件下将形成电压增加到预定的第一电压水平，然后，形成 电压保持在第一电压电平预定的时间段，由此形成具有微小凹陷部分的多孔氧化铝层; 以及蚀刻步骤（c），其中在步骤（b）之后，使多孔氧化铝层与蚀刻溶液接触，由此微小凹部扩大，并且微小凹陷部分的侧表面倾斜。

公开(公告)号：US07518676B2

公开(公告)日：2009-04-14

申请号：US11369953

申请日：2006-03-08

申请人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

发明人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

IPC分类号： G02F1/1335 ,  G02B5/124

CPC分类号： G02F1/133553 ,  G02B5/124 ,  G02F1/1334

摘要： A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.

摘要翻译： 制造微角立方体阵列的方法包括以下步骤：制备基底，其至少其表面部分由立方单晶构成，并具有基本平行于晶体{111}面的表面; 并且各向异性地蚀刻衬底的表面，从而在衬底的表面上形成多个用于微角形立方体阵列的单元元件。 这些单位元件中的每一个由已经以比晶体的{111}平面更低的蚀刻速率形成的多个晶面构成。

公开(公告)号：US20120058216A1

公开(公告)日：2012-03-08

申请号：US13319014

申请日：2010-05-06

申请人： Ichiroh Ihara

发明人： Ichiroh Ihara

IPC分类号： B29C59/02 ,  C25D11/16 ,  C25D7/00 ,  B29C33/56

CPC分类号： G02B1/118 ,  B29C33/3857 ,  B29C33/424 ,  B29C33/565 ,  C25D11/045 ,  C25D11/16 ,  C25F3/20

摘要： An anodized layer formation method of at least one example embodiment of the present invention includes the steps of: (a) providing an aluminum base which has a machined surface; (b) forming, in the surface of the aluminum base, a minute uneven structure which has a smaller average neighboring distance than an average neighboring distance of a plurality of minute recessed portions that an intended porous alumina layer has; and (c) after step (b), anodizing the surface of the aluminum base, thereby forming a porous alumina layer which has the plurality of minute recessed portions. According to at least one embodiment the present invention, a porous alumina layer which has uniformly-distributed minute recessed portions can be formed over a machined surface of an aluminum base.

摘要翻译： 本发明的至少一个示例性实施例的阳极氧化层形成方法包括以下步骤：（a）提供具有加工表面的铝基底; （b）在所述铝基材的表面形成与所述多孔氧化铝层所具有的多个微小凹部的平均相邻距离相比平均相邻距离小的微小凹凸结构; 和（c）在步骤（b）之后，阳极氧化铝基材的表面，从而形成具有多个微小凹陷部分的多孔氧化铝层。 根据本发明的至少一个实施方案，可以在铝基体的加工表面上形成具有均匀分布的微小凹陷部分的多孔氧化铝层。

公开(公告)号：US20060146237A1

公开(公告)日：2006-07-06

申请号：US11369953

申请日：2006-03-08

申请人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

发明人： Kiyoshi Minoura ,  Shun Ueki ,  Yasuhisa Itoh ,  Ichiroh Ihara ,  Yutaka Sawayama ,  Kohji Taniguchi

IPC分类号： G02F1/1335

CPC分类号： G02F1/133553 ,  G02B5/124 ,  G02F1/1334

摘要： A method of making a micro corner cube array includes the steps of: preparing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is substantially parallel to {111} planes of the crystals; and etching the surface of the substrate anisotropically, thereby forming a plurality of unit elements for the micro corner cube array on the surface of the substrate. Each of these unit elements is made up of a number of crystal planes that have been formed at a lower etch rate than the {111} planes of the crystals.