Functional imaging using capacitive micromachined ultrasonic transducers
    1.
    发明申请
    Functional imaging using capacitive micromachined ultrasonic transducers 审中-公开
    使用电容微加工超声换能器的功能成像

    公开(公告)号:US20070287912A1

    公开(公告)日:2007-12-13

    申请号:US11803157

    申请日:2007-05-11

    IPC分类号: A61B8/00 A61N5/067

    摘要: The present invention provides an apparatus for functional imaging of an object that is compact, sensitive, and provides real-time three-dimensional images. The apparatus includes a source of non-ultrasonic energy, where the source induces generation of ultrasonic waves within the object. The source can provide any type of non-ultrasonic energy, including but not limited to light, heat, microwaves, and other electromagnetic fields. Preferably, the source is a laser. The apparatus also includes a single capacitive micromachined ultrasonic transducer (CMUT) device or an array of CMUTs. In the case of a single CMUT element, it can be mechanically scanned to simulate an array of any geometry. Among the advantages of CMUTs are tremendous fabrication flexibility and a typically wider bandwidth. Transducer arrays with high operating frequencies and with nearly arbitrary geometries can be fabricated. A method of functional imaging using the apparatus is also provided.

    摘要翻译: 本发明提供了一种用于对物体进行功能成像的装置,其是紧凑的,敏感的并且提供实时的三维图像。 该装置包括非超声能量源,其中源引起在物体内产生超声波。 源可以提供任何类型的非超声波能量,包括但不限于光,热,微波和其他电磁场。 优选地,源是激光。 该装置还包括单个电容微机械加速超声换能器(CMUT)装置或CMUT阵列。 在单个CMUT元件的情况下,可以机械扫描以模拟任何几何的阵列。 CMUT的优点之一是巨大的制造灵活性和通常更宽的带宽。 可以制造具有高工作频率和几乎任意几何形状的传​​感器阵列。 还提供了使用该装置的功能成像的方法。

    Method of forming a capacitive micromachined ultrasonic transducer (CMUT)
    2.
    发明授权
    Method of forming a capacitive micromachined ultrasonic transducer (CMUT) 有权
    形成电容微加工超声波换能器(CMUT)的方法

    公开(公告)号:US08324006B1

    公开(公告)日:2012-12-04

    申请号:US12589754

    申请日:2009-10-28

    IPC分类号: H01H9/00 H01L21/449

    CPC分类号: B06B1/0292

    摘要: A method includes forming first isolation trenches in a first side of a first semiconductor-on-insulator (SOI) structure to electrically isolate multiple portions of the first SOI structure from each other. The method also includes bonding a second SOI structure to the first SOI structure to form multiple cavities between the SOI structures. The method further includes forming conductive plugs through a second side of the first SOI structure and forming second isolation trenches in the second side of the first SOI structure around the conductive plugs. In addition, the method includes removing portions of the second SOI structure to leave a membrane bonded to the first SOI structure. The isolated portions of the first SOI structure, the cavities, and the membrane form multiple capacitive micromachined ultrasonic transducer (CMUT) elements. Each CMUT element is formed in one of the isolated portions of the first SOI structure and includes multiple CMUT cells.

    摘要翻译: 一种方法包括在第一绝缘体绝缘体(SOI)结构的第一侧中形成第一隔离沟槽,以将第一SOI结构的多个部分彼此电隔离。 该方法还包括将第二SOI结构接合到第一SOI结构以在SOI结构之间形成多个空腔。 该方法还包括通过第一SOI结构的第二侧形成导电插塞,并在导电插塞周围的第一SOI结构的第二侧形成第二隔离沟槽。 此外,该方法包括去除第二SOI结构的部分以留下结合到第一SOI结构的膜。 第一SOI结构,空腔和膜的隔离部分形成多个电容微加工超声换能器(CMUT)元件。 每个CMUT元件形成在第一SOI结构的隔离部分之一中,并且包括多个CMUT单元。