公开(公告)号：US20100103639A1

公开(公告)日：2010-04-29

申请号：US12214696

申请日：2008-06-20

申请人： Markondeya Raj Pulugurtha ,  Jin Hyun Hwang ,  Isaac Robin Abothu ,  Mahadevan Krishna Iyer ,  Rao Tummala ,  Madhavan Swaminathan

发明人： Markondeya Raj Pulugurtha ,  Jin Hyun Hwang ,  Isaac Robin Abothu ,  Mahadevan Krishna Iyer ,  Rao Tummala ,  Madhavan Swaminathan

IPC分类号： H05K9/00

CPC分类号： H05K9/0083

摘要： Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.

摘要翻译： 公开了在集成电路器件和系统架构中降低电磁干扰和噪声的铁电和铁磁噪声隔离结构。 代表性结构包括相对于彼此垂直设置的两个或更多个器件，以及设置在各个器件之间的薄铁电或铁磁膜层，其将电磁能量耦合从一个器件隔离到另一个器件。

公开(公告)号：US07977758B2

公开(公告)日：2011-07-12

申请号：US12214696

申请日：2008-06-20

申请人： Markondeya Raj Pulugurtha ,  Madhaven Swaminathan ,  Mahadevan Krishna Iyer ,  Rao Tummala ,  Isaac Robin Abothu ,  Jin Hyun Hwang

发明人： Markondeya Raj Pulugurtha ,  Madhaven Swaminathan ,  Mahadevan Krishna Iyer ,  Rao Tummala ,  Isaac Robin Abothu ,  Jin Hyun Hwang

IPC分类号： H01L29/82

CPC分类号： H05K9/0083

摘要： Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.

摘要翻译： 公开了在集成电路器件和系统架构中降低电磁干扰和噪声的铁电和铁磁噪声隔离结构。 代表性结构包括相对于彼此垂直设置的两个或更多个器件，以及设置在各个器件之间的薄铁电或铁磁膜层，其将电磁能量耦合从一个器件隔离到另一个器件。

公开(公告)号：US07556189B2

公开(公告)日：2009-07-07

申请号：US11138011

申请日：2005-05-26

申请人： Ankur Aggarwal ,  Isaac Robin Abothu ,  Pulugurtha Markondeya Raj ,  Rao R. Tummala

发明人： Ankur Aggarwal ,  Isaac Robin Abothu ,  Pulugurtha Markondeya Raj ,  Rao R. Tummala

IPC分类号： H01L21/02 ,  B05D1/00

CPC分类号： H01L21/2885 ,  B23K35/007 ,  B23K35/262 ,  B23K35/34 ,  H01L21/76885 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311

摘要： Nano-structured interconnect formation and a reworkable bonding process using solder films. Large area fabrication of nano-structured interconnects is demonstrated at a very fine pitch. This technology can be used for pushing the limits of current flip chip bonding in terms of pitch, number of I/Os, superior combination of electrical and mechanical properties as well as reworkability. Sol-gel and electroless processes were developed to demonstrate film bonding interfaces between metallic pads and nano interconnects. Solution-derived nano-solder technology is an attractive low-cost method for several applications such as MEMS hermetic packaging, compliant interconnect bonding and bump-less nano-interconnects.

摘要翻译： 纳米结构的互连结构和使用焊料薄膜的可再结合的焊接工艺。 纳米结构互连的大面积制造以非常细的间距示出。 该技术可用于推动当前倒装芯片接合的极限，其间距，I / O数量，电气和机械性能的优异组合以及可再加工性。 开发了溶胶 - 凝胶和无电工艺，以证明金属焊盘和纳米互连之间的膜结合界面。 解决方案衍生的纳米焊料技术是MEMS密封封装，兼容互连接合和无凸点纳米互连等多种应用的有吸引力的低成本方法。