摘要:
A method for fabricating three-dimensional optical waveguides is disclosed. In this method, a single crystal semiconductor layer is grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer is deposited to a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer is then formed to provide confinement of light in the lateral direction. In the preferred method, the growth of single crystal semiconductor upon the insulator is achieved by a vapor-phase lateral epitaxial overgrowth technique.Devices fabricated according to the method are also disclosed.
摘要:
Apparatus and method for scaling solid-state devices to higher power using multiple sources each of which are separately collimated, followed by focusing of the pump radiation into gain medium colinear to laser mode using a moderated focus. A modularized system is also described.
摘要:
Apparatus and method for scaling solid-state devices to higher power using multiple sources each of which are separately collimated, followed by focusing of the pump radiation into gain medium colinear to laser mode using a moderated focus. A modularized system is also described.
摘要:
A three-dimensional optical waveguide is disclosed. This waveguide comprises a single crystal semiconductor layer grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer has a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer provides confinement of light in the lateral direction. This lateral confinement is achieved by side walls in the semiconductor layer which extend toward, but fall short of, the insulator layer.