公开(公告)号：US20050211901A1

公开(公告)日：2005-09-29

申请号：US11079626

申请日：2005-03-14

申请人： Ivo Crossmann ,  Hans Alt

发明人： Ivo Crossmann ,  Hans Alt

IPC分类号： G01J3/45 ,  G01N21/35 ,  G01N21/63 ,  H01L21/66

CPC分类号： G01N21/3563

摘要： A method for determining the substitutional carbon content (Cs) of a monocrystalline or polycrystalline silicon sample comprises measuring an absorption spectrum of the silicon sample to be studied and of a reference sample and calculatng a differential spectrum from them, wherein the calculated differential spectrum provides a detection threshold of

摘要翻译： 用于测定单晶或多晶硅样品的取代碳含量（℃）的方法包括测量待研究的硅样品和参考样品的吸收光谱，并从其计算差示光谱 ，其中所计算的差分光谱提供<5PPBA C 的检测阈值。

公开(公告)号：US20080038178A1

公开(公告)日：2008-02-14

申请号：US11834135

申请日：2007-08-06

申请人： Thomas Altmann ,  Hans-Peter Sendlinger ,  Ivo Crossmann

发明人： Thomas Altmann ,  Hans-Peter Sendlinger ,  Ivo Crossmann

IPC分类号： C01B33/035

CPC分类号： C01B33/029 ,  C01B33/03 ,  C01B33/035

摘要： In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body with deposited silicon, until at least the time when the reactor is closed in order to deposit silicon on the second carrier body.

摘要翻译： 在批量生产高纯度多晶硅的过程中，U型硅载体主体紧固在开放式沉积反应器中，沉积反应器被气密密封，U形载体主体被加热电流，含硅反应 气体和氢气通过供应管线被引入反应器中，使得来自反应气体的硅沉积在载体上，载体主体的直径增加，并且形成的废气通过排出管线从沉积反应器中除去， 在达到多晶硅棒的期望直径之后，终止沉积，将载体主体冷却至室温，反应器打开，载体从反应器中取出，第二U形硅载体由硅制成 被固定在沉积反应器中，惰性气体至少从反应器打开到外部的时候通过供给和排出管线进入开放式反应器 将具有沉积硅的第一载体体直到至少反应器关闭的时间以将硅沉积在第二载体上。

公开(公告)号：US20050135986A1

公开(公告)日：2005-06-23

申请号：US11010525

申请日：2004-12-13

申请人： Dieter Weidhaus ,  Ivo Crossmann ,  Franz Schreieder

发明人： Dieter Weidhaus ,  Ivo Crossmann ,  Franz Schreieder

IPC分类号： C01B33/02 ,  C01B33/021 ,  C01B33/027 ,  C01B33/03

CPC分类号： C01B33/03 ,  C01B33/021 ,  C01B33/027 ,  Y10T428/2982

摘要： A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.

摘要翻译： 多晶粒状硅由具有大于理论固体密度的99.9％的密度的颗粒制成，因此具有小于0.1％的孔含量并且表面粗糙度R a a小于 150nm。