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公开(公告)号：US06556602B2
公开(公告)日：2003-04-29
申请号：US09730286
申请日：2000-12-05
申请人： Robert Rex Rice , Neil F. Ruggieri , J. Stanley Whiteley , Robert A. Morgan , Richard A. Skogman
发明人： Robert Rex Rice , Neil F. Ruggieri , J. Stanley Whiteley , Robert A. Morgan , Richard A. Skogman
IPC分类号： H01S500
CPC分类号： H01S5/18375 , H01J29/10 , H01S3/0959 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/04 , H01S5/423
摘要： An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1-x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1-x)yIn1-yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1-xAs that are epitaxially grown on the multi quantum well active gain region. The output mirror can also include a thin, final layer of GaAs to cap the structure and prevent degradation of the GaxAl1-xAs layers. The semiconductor laser screen also includes a carrier that is affixed to the output mirror. Further, the laser screen includes a metallic mirror and, in one embodiment, a hybrid metallic-dielectric mirror on the etch stop layer opposite the output mirror. As such, a laser cavity is defined between the output mirror and the metallic mirror. The semiconductor laser screen may be integrated into an electron beam pumped semiconductor laser which forms the basis for a projection display. A fabrication method is also provided.
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2.发明授权Electron beam pumped semiconductor laser screen and associated fabrication method 有权电子束泵浦半导体激光屏及相关制造方法公开(公告)号：US06757312B2
公开(公告)日：2004-06-29
申请号：US10373174
申请日：2003-02-24
申请人： Robert Rex Rice , Neil F. Ruggieri , J. Stanley Whiteley , Robert A. Morgan , Richard A. Skogman
发明人： Robert Rex Rice , Neil F. Ruggieri , J. Stanley Whiteley , Robert A. Morgan , Richard A. Skogman
IPC分类号： H01S500
CPC分类号： H01S5/18375 , H01J29/10 , H01S3/0959 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/04 , H01S5/423
摘要： An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1−x)InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1−x)yIn1−yP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1−xAs that are epitaxially grown on the multi quantum well active gain region. The output mirror can also include a thin, final layer of GaAs to cap the structure and prevent degradation of the GaxAl1−xAs layers. The semiconductor laser screen also includes a carrier that is affixed to the output mirror. Further, the laser screen includes a metallic mirror and, in one embodiment, a hybrid metallic-dielectric mirror on the etch stop layer opposite the output mirror. As such, a laser cavity is defined between the output mirror and the metallic mirror. The semiconductor laser screen may be integrated into an electron beam pumped semiconductor laser which forms the basis for a projection display. A fabrication method is also provided.
摘要翻译： 描述了电子束泵浦半导体激光屏幕和相关联的制造方法，其提供具有相对长的工作寿命的显示屏，制造成本较低，并且在较低的电子电压和接近室温条件下操作。 激光屏幕包括具有GaInP的量子阱和（Al x Ga 1-x）InP的势垒层的多量子阱活性增益区，从而允许在可见的红色光谱中操作。 此外，在牺牲衬底上外延生长的第一层是（GaxAl1-x）yIn1-yP的蚀刻停止层，其在牺牲衬底的随后蚀刻期间用作蚀刻停止层，并且还可以用于将腔长度调整为 正确的共振条件。 激光屏幕还包括输出镜，其具有在多量子阱活性增益区上外延生长的两种不同组成的GaxAl1-xAs的交替层。 输出反射镜还可以包括薄的最终的GaAs层，以覆盖该结构并防止GaxAl1-xAs层的劣化。 半导体激光屏幕还包括固定到输出镜的载体。 此外，激光屏幕包括金属镜，并且在一个实施例中，在与输出镜相对的蚀刻停止层上的复合金属 - 电介质镜。 因此，在输出镜和金属镜之间限定激光腔。 半导体激光屏可以集成到形成投影显示基础的电子束泵浦半导体激光器中。 还提供了制造方法。
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公开(公告)号：US5841802A
公开(公告)日：1998-11-24
申请号：US705732
申请日：1996-08-30
CPC分类号： B82Y20/00 , H01S5/18358 , H01S3/0959 , H01S5/04 , H01S5/3406 , H01S5/34333
摘要： An electron beam pumped semiconductor laser which includes a substrate, an optical gain structure provided on the substrate, the optical gain structure being comprised of a plurality of alternating quantum well layers and isolation layers, the quantum well layers being spaced apart from one another by respective, intervening ones of the isolation layers by a sufficient distance to substantially isolate the quantum well layers from one another, and a first reflective layer provided on a first surface of the optical gain structure. With this construction, the quantum well layers are quantum mechanically uncoupled. Further, the optical gain structure has a total thickness which is sufficient to enable the optical gain structure to be coupled to excitation of an electron beam produced by an electron beam pumping device and directed through the first reflective layer and incident upon the optical gain structure. All of the quantum well layers of the optical gain structure are preferably well-matched in terms of their thickness and compositional uniformity, so that each of the quantum well layers effectively functions as an independent optical gain region having a spectral gain region which is substantially coincident with that of all of the other quantum well layers. Preferably, each of the quantum well layers is strained, with each of the strained quantum well layers preferably having a thickness less than their pseudomorphic strain limit thickness. The semiconductor laser preferably further includes a second reflective layer provided on a second surface of the optical gain structure, whereby a laser cavity is provided in the region bounded by the first and second reflective layers, with the first reflective layer serving as the rear mirror and the second reflective layer serving as the front or output mirror of the laser. The first reflective layer is preferably mostly transmissive with respect to the electron beam and mostly reflective with respect to the laser light generated within the laser cavity. The second reflective layer is preferably partially transmissive and partially reflective with respect to the laser light generated within the laser cavity.
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