Vascular-preferred promoters
    8.
    发明授权
    Vascular-preferred promoters 失效
    血管优选启动子

    公开(公告)号:US07442786B2

    公开(公告)日:2008-10-28

    申请号:US10717897

    申请日:2003-11-21

    IPC分类号: C12N15/82 A01H5/00 A01H7/00

    CPC分类号: C12N15/8223 C12N15/8226

    摘要: The present invention relates to the regulation of polynucleotide transcription and/or expression. In particular, this invention relates to polynucleotide regulatory sequences isolated from Eucalyptus grandis and Pinus radiata that are capable of conferring vascular-preferred polynucleotide transcription in plant cells. Constructs and methods for using the inventive regulatory sequences for modifying transcription of endogenous and/or heterologous polynucleotides also are included in the invention.

    摘要翻译: 本发明涉及多核苷酸转录和/或表达的调控。 特别地,本发明涉及从能够在植物细胞中赋予血管优选的多核苷酸转录的从桉树(Eucalyptus grandis)和松属(Pinus radiata)分离的多核苷酸调节序列。 本发明还包括使用本发明调节序列修饰内源和/或异源多核苷酸转录的构建体和方法。

    Method for producing metal oxide nanoparticles
    9.
    发明授权
    Method for producing metal oxide nanoparticles 有权
    金属氧化物纳米粒子的制造方法

    公开(公告)号:US07357910B2

    公开(公告)日:2008-04-15

    申请号:US10195757

    申请日:2002-07-15

    IPC分类号: C01F49/02 C01F17/00 C01B13/14

    摘要: Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

    摘要翻译: 金属氧化物纳米粒子的制造方法。 该方法包括产生固体金属微粒的气溶胶,在足够高的温度下用等离子体热区产生等离子体以将微粒蒸发成金属蒸气,并将气溶胶导入等离子体的热区。 微粒在热区中蒸发成金属蒸气。 金属蒸汽被引导离开热区并进入较冷的等离子体余辉,其中它被氧化,冷却和冷凝以形成固体金属氧化物纳米颗粒。

    Wide band gap bipolar transistor with reduced thermal runaway
    10.
    发明授权
    Wide band gap bipolar transistor with reduced thermal runaway 失效
    宽带双极晶体管具有减少的热失控

    公开(公告)号:US06989581B2

    公开(公告)日:2006-01-24

    申请号:US10497814

    申请日:2002-12-23

    IPC分类号: H01L27/082

    摘要: A bipolar transistor with vertical geometry comprises a base region (1) provided with a base contact (21), emitter and collector regions (2,3) arranged to extract minority carriers from the base region, and an excluding structure for counteracting entry of minority carriers into the base region via the base contact, wherein the base region has a bandgap of greater than 0.5 eV and a doping level greater than 1017 cm−3. As shown the base includes an excluding heterojunction (4) preventing entry of carriers from the base contact (21), but alternatively the base region could comprise a “high-low” doping homojunction. The construction shows improved resistance to thermal runaway even in multi-finger transistors. It is particularly useful for high power, high frequency transistors, e.g. base on gallium indium arsenide. The collector region preferably has a heterostructure.

    摘要翻译: 具有垂直几何形状的双极晶体管包括设置有基极触点(21)的基极区域(1),布置成从基极区域提取少数载流子的发射极和集电极区域(2,3),以及用于抵消少数进入的排除结构 载体经由基极接触进入基极区域,其中基极区域具有大于0.5eV的带隙和大于10μS-3的掺杂水平。 如图所示,底座包括防止载体从基极触点(21)进入的排除异质结(4),但是也可选择地,基极区域可以包括“高 - 低”掺杂均质结。 该结构即使在多指状晶体管中也显示出改善的耐热失控性。 它对于大功率高频晶体管是特别有用的。 基于砷化铟镓。 收集区优选具有异质结构。