摘要:
An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.
摘要:
An organic electro-luminance display device includes a first substrate and a second substrate; an array element on the first substrate, the array element including at least one thin film transistor (TFT) in each sub-pixel; a first electrode on the second substrate; a buffer on the first electrode including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; a second electrode formed on the organic electro-luminescent layer; and a conductive spacer for electrically connecting the TFT to the second electrode.
摘要:
Disclosed is an organic electro luminescence device having a display area having a plurality of display pixels, a dummy area having a plurality of dummy pixels at a periphery of the display area, an anode at display area, a buffer layer on the anode and on the substrate, a barrier on the buffer layer, and an organic electro luminescence layer in the display and dummy pixels.
摘要:
Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
摘要:
Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
摘要:
An organic electroluminescent device and a method of fabricating the same are provided. The organic electroluminescent device includes a first substrate, a second substrate, a thin film transistor formed on the first substrate, a light emitting diode comprising first and second electrodes and an organic luminescent layer that are formed on the thin film transistor, and first and second passivation layers formed on the first substrate on which the light emitting diode is formed.
摘要:
An organic electroluminescence device includes a buffer formed in a polygonal structure corresponding to each of sub-pixels, an electrode separator formed along an outer periphery of the buffer so as to separate the sub-pixels, an emission region formed in an inner region defined by the buffer, and an electric connection region formed in a region protruding from one side of the buffer.
摘要:
An image forming apparatus capable of performing a skip copy and an image forming method using the same, the image forming apparatus including: an image forming unit to copy a document, and a control unit to control the image forming unit to skip a designated region of the document when the image forming unit copies the document. Accordingly, resources, such as ink, and time can be preserved.
摘要:
The display device includes a first substrate, a second substrate, a spacer and a connection electrode. The first substrate includes an organic electroluminescence diode device, and the second substrate faces the first substrate and includes a thin film transistor. The connection electrode is configured to electrically connect the thin film transistor and the organic electroluminescence diode device. The display device further includes a first buffer pattern configured to separate two adjacent pixel regions and a second buffer pattern overlying the first buffer pattern and having a predetermined shape. The first buffer pattern is etchable to produce a cavity between the two adjacent pixel regions. The cavity can be enlarged to the extent that the shape of the second buffer pattern is maintained.
摘要:
An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.