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公开(公告)号：US07951424B2
公开(公告)日：2011-05-31
申请号：US12122981
申请日：2008-05-19
IPC分类号： B05D5/00
摘要： The present invention provides a method for the selective placement of carbon nanotubes on a particular surface. In particular, the present invention provides a method in which self-assembled monolayers formed on an unpatterned or patterned metal oxide surface are used to attract or repel carbon nanotubes from a dispersion containing the same. In accordance with the present invention, the carbon nanotubes can be attracted to the self-assembled monolayers so as to be attached to the metal oxide surface, or they can be repelled by the self-assembled monolayers bonding to a predetermined surface other than the metal oxide surface containing the self-assembled monolayers.
摘要翻译： 本发明提供了一种在特定表面上选择性地放置碳纳米管的方法。 特别地，本发明提供了一种方法，其中形成在未图案化或图案化的金属氧化物表面上的自组装单层被用于从含有该碳纳米管的分散体吸引或排斥碳纳米管。 根据本发明，碳纳米管可以被吸引到自组装单层上以便附着到金属氧化物表面，或者它们可以被结合到除了金属之外的预定表面的自组装单层排斥 含有自组装单层的氧化物表面。
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公开(公告)号：US07504132B2
公开(公告)日：2009-03-17
申请号：US11044885
申请日：2005-01-27
IPC分类号： B05D5/00
摘要： The present invention provides a method for the selective placement of carbon nanotubes on a particular surface. In particular, the present invention provides a method in which self-assembled monolayers formed on an unpatterned or patterned metal oxide surface are used to attract or repel carbon nanotubes from a dispersion containing the same. In accordance with the present invention, the carbon nanotubes can be attracted to the self-assembled monolayers so as to be attached to the metal oxide surface, or they can be repelled by the self-assembled monolayers bonding to a predetermined surface other than the metal oxide surface containing the self-assembled monolayers.
摘要翻译： 本发明提供了一种在特定表面上选择性地放置碳纳米管的方法。 特别地，本发明提供了一种方法，其中形成在未图案化或图案化的金属氧化物表面上的自组装单层被用于从含有该碳纳米管的分散体吸引或排斥碳纳米管。 根据本发明，碳纳米管可以被吸引到自组装单层上以便附着到金属氧化物表面，或者它们可以被结合到除了金属之外的预定表面的自组装单层排斥 含有自组装单层的氧化物表面。
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3.发明授权Graphene or carbon nanotube devices with localized bottom gates and gate dielectric 有权具有局部底栅和栅极电介质的石墨烯或碳纳米管器件公开(公告)号：US08785911B2
公开(公告)日：2014-07-22
申请号：US13167570
申请日：2011-06-23
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
IPC分类号： H01L21/336
CPC分类号： H01L29/7781 , B82Y10/00 , B82Y30/00 , H01L29/1075 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/055
摘要： Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
摘要翻译： 提供具有基于纳米材料的通道（例如，碳纳米管或石墨烯通道）的晶体管器件及其制造技术。 一方面，提供一种晶体管器件。 晶体管器件包括衬底; 衬底上的绝缘体; 嵌入绝缘体中的局部底栅，其中栅极的顶表面与绝缘体的表面基本共面; 底栅上的局部栅极电介质; 在所述局部栅极电介质的至少一部分上的碳基纳米结构材料，其中所述碳基纳米结构材料的一部分用作所述器件的通道; 并且导电源极和漏极接触到用作器件的源极和漏极区域的沟道的相对侧上的碳基纳米结构材料的一个或多个部分。
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公开(公告)号：US20090117277A1
公开(公告)日：2009-05-07
申请号：US12122981
申请日：2008-05-19
摘要： The present invention provides a method for the selective placement of carbon nanotubes on a particular surface. In particular, the present invention provides a method in which self-assembled monolayers formed on an unpatterned or patterned metal oxide surface are used to attract or repel carbon nanotubes from a dispersion containing the same. In accordance with the present invention, the carbon nanotubes can be attracted to the self-assembled monolayers so as to be attached to the metal oxide surface, or they can be repelled by the self-assembled monolayers bonding to a predetermined surface other than the metal oxide surface containing the self-assembled monolayers.
摘要翻译： 本发明提供了一种在特定表面上选择性地放置碳纳米管的方法。 特别地，本发明提供了一种方法，其中形成在未图案化或图案化的金属氧化物表面上的自组装单层被用于从含有该碳纳米管的分散体吸引或排斥碳纳米管。 根据本发明，碳纳米管可以被吸引到自组装单层上以便附着到金属氧化物表面，或者它们可以被结合到除了金属之外的预定表面的自组装单层排斥 含有自组装单层的氧化物表面。
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5.发明申请Graphene or Carbon Nanotube Devices with Localized Bottom Gates and Gate Dielectric 有权石墨烯或碳纳米管器件，具有局部底栅和栅介质公开(公告)号：US20120326126A1
公开(公告)日：2012-12-27
申请号：US13167570
申请日：2011-06-23
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
IPC分类号： H01L21/336 , H01L29/786 , H01L29/06 , H01L29/16 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/7781 , B82Y10/00 , B82Y30/00 , H01L29/1075 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/055
摘要： Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
摘要翻译： 提供具有基于纳米材料的通道（例如，碳纳米管或石墨烯通道）的晶体管器件及其制造技术。 一方面，提供一种晶体管器件。 晶体管器件包括衬底; 衬底上的绝缘体; 嵌入绝缘体中的局部底栅，其中栅极的顶表面与绝缘体的表面基本共面; 底栅上的局部栅极电介质; 在所述局部栅极电介质的至少一部分上的碳基纳米结构材料，其中所述碳基纳米结构材料的一部分用作所述器件的通道; 并且导电源极和漏极接触到用作器件的源极和漏极区域的沟道的相对侧上的碳基纳米结构材料的一个或多个部分。
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