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1.发明申请Graphene or Carbon Nanotube Devices with Localized Bottom Gates and Gate Dielectric 有权石墨烯或碳纳米管器件，具有局部底栅和栅介质公开(公告)号：US20120326126A1
公开(公告)日：2012-12-27
申请号：US13167570
申请日：2011-06-23
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
IPC分类号： H01L21/336 , H01L29/786 , H01L29/06 , H01L29/16 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/7781 , B82Y10/00 , B82Y30/00 , H01L29/1075 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/055
摘要： Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
摘要翻译： 提供具有基于纳米材料的通道（例如，碳纳米管或石墨烯通道）的晶体管器件及其制造技术。 一方面，提供一种晶体管器件。 晶体管器件包括衬底; 衬底上的绝缘体; 嵌入绝缘体中的局部底栅，其中栅极的顶表面与绝缘体的表面基本共面; 底栅上的局部栅极电介质; 在所述局部栅极电介质的至少一部分上的碳基纳米结构材料，其中所述碳基纳米结构材料的一部分用作所述器件的通道; 并且导电源极和漏极接触到用作器件的源极和漏极区域的沟道的相对侧上的碳基纳米结构材料的一个或多个部分。
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2.发明授权Graphene or carbon nanotube devices with localized bottom gates and gate dielectric 有权具有局部底栅和栅极电介质的石墨烯或碳纳米管器件公开(公告)号：US08785911B2
公开(公告)日：2014-07-22
申请号：US13167570
申请日：2011-06-23
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
IPC分类号： H01L21/336
CPC分类号： H01L29/7781 , B82Y10/00 , B82Y30/00 , H01L29/1075 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/055
摘要： Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
摘要翻译： 提供具有基于纳米材料的通道（例如，碳纳米管或石墨烯通道）的晶体管器件及其制造技术。 一方面，提供一种晶体管器件。 晶体管器件包括衬底; 衬底上的绝缘体; 嵌入绝缘体中的局部底栅，其中栅极的顶表面与绝缘体的表面基本共面; 底栅上的局部栅极电介质; 在所述局部栅极电介质的至少一部分上的碳基纳米结构材料，其中所述碳基纳米结构材料的一部分用作所述器件的通道; 并且导电源极和漏极接触到用作器件的源极和漏极区域的沟道的相对侧上的碳基纳米结构材料的一个或多个部分。
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3.发明授权公开(公告)号：US08772910B2
公开(公告)日：2014-07-08
申请号：US13306357
申请日：2011-11-29
IPC分类号： H01L21/02
CPC分类号： H01L29/778 , B82Y10/00 , H01L29/1606 , H01L51/002 , H01L51/0048 , H01L51/0558
摘要： A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device.
摘要翻译： 一种用于掺杂石墨烯或纳米管薄膜场效应晶体管器件以改善电子迁移率的方法和装置。 该方法包括选择性地将掺杂剂施加到石墨烯或纳米管薄膜场效应晶体管器件的沟道区域，以改善场效应晶体管器件的电子迁移率。
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公开(公告)号：US08853034B2
公开(公告)日：2014-10-07
申请号：US13616418
申请日：2012-09-14
IPC分类号： H01L21/336 , C01B31/04 , B82Y30/00 , H01B1/04 , H01L51/00 , B82Y40/00 , B82Y10/00 , H01L51/44
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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5.发明申请SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS 有权碳纳米管的选择性放置通过非对称吸收碳纳米管和自组装单体的碳纳米管公开(公告)号：US20130082233A1
公开(公告)日：2013-04-04
申请号：US13248176
申请日：2011-09-29
IPC分类号： H01L29/06 , H01L21/20 , C07D213/76 , B82Y40/00 , B82Y99/00
CPC分类号： C07D213/79 , B82Y10/00 , B82Y40/00 , C07D213/76 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0558
摘要： A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
摘要翻译： 形成具有选择性放置的碳纳米管的结构的方法，制造带电碳纳米管的方法，双功能前体和具有最小捆扎的具有高密度碳纳米管层的结构。 碳纳米管选择性地放置在具有两个区域的基板上。 第一区域的等电点超过第二区域的等电点。 将基底浸入具有锚定和带电末端的双功能前体的溶液中。 锚定端连接到第一区域以形成具有带电端的自组装单层。 将具有带电单层的衬底浸入具有相反电荷的碳纳米管的溶液中，以在自组装单层上形成碳纳米管层。 带电的碳纳米管通过官能化或用离子表面活性剂涂覆制成。
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公开(公告)号：US08895417B2
公开(公告)日：2014-11-25
申请号：US13306276
申请日：2011-11-29
CPC分类号： B82Y10/00 , H01L29/0673 , H01L29/1606 , H01L29/66431 , H01L29/66742 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0021 , H01L51/0048 , H01L51/0545 , H01L51/105
摘要： A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.
摘要翻译： 一种用于掺杂石墨烯和纳米管薄膜晶体管场效应晶体管器件中的至少一个的方法和装置，以降低与金属电极的接触电阻。 该方法包括选择性地将掺杂剂施加到石墨烯和纳米管场效应晶体管器件中的至少一个的金属接触区域，以降低场效应晶体管器件的接触电阻。
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公开(公告)号：US08642432B2
公开(公告)日：2014-02-04
申请号：US13308974
申请日：2011-12-01
IPC分类号： H01L21/336
CPC分类号： H01L51/0558 , B82Y10/00 , B82Y40/00 , H01L51/0018 , H01L51/002 , H01L51/0048 , H01L51/0072 , H01L51/055 , Y10S977/846 , Y10S977/938
摘要： A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.
摘要翻译： 用于形成具有稳定的n掺杂纳米组分的场效应晶体管的组合物和方法。 该方法包括在栅极上形成栅极电介质，在栅极电介质上形成包含纳米成分的沟道，在纳米元件的第一区域上形成源极，在纳米元件的第二区域上形成漏极， 形成场效应晶体管，并且将场效应晶体管的纳米组分的一部分暴露于二氢四氮杂萘以产生稳定的n掺杂纳米组分，其中二氢四氮杂芳烃由下式表示：其中在二氢四氮杂碳酸化学结构中， R1，R2，R3和R4可以是氢，C1〜C16碳的烷基，烷氧基，烷硫基，三烷基硅烷基，羟甲基，羧酸基或羧酸酯基。
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公开(公告)号：US20130011960A1
公开(公告)日：2013-01-10
申请号：US13616418
申请日：2012-09-14
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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9.发明授权Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers 有权通过相对充电的碳纳米管和自组装单层的库仑吸引选择性地放置碳纳米管公开(公告)号：US09273004B2
公开(公告)日：2016-03-01
申请号：US13248176
申请日：2011-09-29
CPC分类号： C07D213/79 , B82Y10/00 , B82Y40/00 , C07D213/76 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0558
摘要： A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.
摘要翻译： 形成具有选择性放置的碳纳米管的结构的方法，制造带电碳纳米管的方法，双功能前体和具有最小捆扎的具有高密度碳纳米管层的结构。 碳纳米管选择性地放置在具有两个区域的基板上。 第一区域的等电点超过第二区域的等电点。 将基底浸入具有锚定和带电末端的双功能前体的溶液中。 锚定端连接到第一区域以形成具有带电端的自组装单层。 将具有带电单层的衬底浸入具有相反电荷的碳纳米管的溶液中，以在自组装单层上形成碳纳米管层。 带电的碳纳米管通过官能化或用离子表面活性剂涂覆制成。
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公开(公告)号：US20130025662A1
公开(公告)日：2013-01-31
申请号：US13189909
申请日：2011-07-25
IPC分类号： H01B1/24 , H01L31/0224 , H01L31/18 , B82Y30/00
CPC分类号： H01B1/04 , B82Y30/00 , B82Y40/00 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： Techniques for reducing the resistivity of carbon nanotube and graphene materials are provided. In one aspect, a method of producing a doped carbon film having reduced resistivity is provided. The method includes the following steps. A carbon material selected from the group consisting of: a nanotube, graphene, fullerene and pentacene is provided. The carbon material and a dopant solution comprising an oxidized form of ruthenium bipyridyl are contacted, wherein the contacting is carried out under conditions sufficient to produce the doped carbon film having reduced resistivity.
摘要翻译： 提供了降低碳纳米管和石墨烯材料的电阻率的技术。 一方面，提供了具有降低电阻率的掺杂碳膜的制造方法。 该方法包括以下步骤。 提供了选自纳米管，石墨烯，富勒烯和并五苯的碳材料。 接触碳材料和包含氧化形式的钌联吡啶的掺杂剂溶液，其中接触在足以产生具有降低的电阻率的掺杂碳膜的条件下进行。
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