Semiconductor Light Emitting Device
    2.
    发明申请
    Semiconductor Light Emitting Device 审中-公开
    半导体发光装置

    公开(公告)号:US20080192781A1

    公开(公告)日:2008-08-14

    申请号:US11661954

    申请日:2005-09-05

    Abstract: The present invention relates in general to semiconductor light emitting devices and in particular to methods of altering the spatial emission patterns of such devices. A known problem with these prior art light emitting devices (and laser diodes in general) is that their far-field emission patterns are elliptical and astigmatic in nature. The present invention addresses this problem by refractive index perurbations in the semiconductor device aligned in a direction substantially transverse to the light emission direction to achieve a desired spatial distribution of the emission.

    Abstract translation: 本发明一般涉及半导体发光器件,尤其涉及改变这种器件的空间发射图案的方法。 这些现有技术的发光装置(通常为激光二极管)的已知问题在于它们的远场发射图案本质上是椭圆形和散光的。 本发明通过在基本上横向于发光方向的方向上对准的半导体器件中的折射率扰动来解决这个问题,以实现发射的期望的空间分布。

    Multi-Stripe Laser Diode Desings Which Exhibit a High Degree of Manufacturability
    3.
    发明申请
    Multi-Stripe Laser Diode Desings Which Exhibit a High Degree of Manufacturability 审中-公开
    具有高度可制造性的多条纹激光二极管产品

    公开(公告)号:US20090268771A1

    公开(公告)日:2009-10-29

    申请号:US11991687

    申请日:2006-09-06

    CPC classification number: H01S5/4031 H01S5/0042 H01S5/1085 H01S5/12

    Abstract: The present application is directed at providing a new lasing device having increased production yields over other single mode laser devices. In particular, a semiconductor lasing device is provided having at least two lasing devices formed on a common substrate. The lasing device is arranged so that in use a preferred lasing device is operational and remaining lasing devices are redundant. This redundancy improves the production yield since only one of the lasing devices needs to function correctly as the others are unused.

    Abstract translation: 本申请旨在提供一种新的激光装置,其具有比其它单模激光装置更高的生产率。 具体地说,提供一种半导体激光装置,其具有形成在公共基板上的至少两个激光装置。 激光装置被布置为使得在使用中优选的激光装置是可操作的,并且剩余的激光装置是多余的。 这种冗余提高了生产成本,因为只有其中一个激光装置需要正常工作,因为其他的未使用。

    Semiconductor laser and method of manufacture
    4.
    发明授权
    Semiconductor laser and method of manufacture 有权
    半导体激光器及其制造方法

    公开(公告)号:US07672348B2

    公开(公告)日:2010-03-02

    申请号:US11328517

    申请日:2006-01-09

    Abstract: Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optical feedback means formed by a plurality of refractive index perturbations (16, 22) in the laser cavity, each perturbation defining two interfaces (20, 21); characterized in that, for at least one perturbation, only one of the two interfaces contributes to optical feedback along the optical path. The present invention relaxes the lithographic tolerances for making single longitudinal mode devices and improves performance characteristics.

    Abstract translation: 公开了一种激光器(10),其包括具有激光介质的激光腔和在空腔的任一端处具有小面(17)形式的主光学反馈装置,激光腔限定纵向延伸的光路; 以及由所述激光腔中的多个折射率扰动(16,22)形成的二次光反馈装置,每个扰动限定两个接口(20,21); 其特征在于,对于至少一个扰动,两个界面中只有一个有助于沿光路的光学反馈。 本发明放宽了用于制造单个纵向模式装置的光刻公差,并提高了性能特征。

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