摘要:
The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.
摘要:
A system for a backplane that employs i) an adjustment of positive-to-negative (P-N) driver skew of a transmit signal of a relatively high-speed differential driver to reduce far-end crosstalk, ii) a high-speed differential subtraction circuit combining a gain-adjusted replica of at least one transmit signal with a received signal to reduce near-end crosstalk, and iii) a phase-locked loop (PLL) synchronization circuit to align timing events between a set of near-end and far-end high-speed interfaces.