Method of making a semiconductor device by balancing shallow trench isolation stress and optical proximity effects
    1.
    发明申请
    Method of making a semiconductor device by balancing shallow trench isolation stress and optical proximity effects 有权
    通过平衡浅沟槽隔离应力和光学邻近效应制造半导体器件的方法

    公开(公告)号:US20060107243A1

    公开(公告)日:2006-05-18

    申请号:US10992031

    申请日:2004-11-18

    IPC分类号: G06F17/50

    摘要: The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.

    摘要翻译: 本发明提供一种制造半导体器件的方法,包括:确定第一半导体器件的隔离结构应力效应,确定第二半导体器件的光学邻近效应,选择建模设计参数,使得隔离结构应力效应为 抵消制造模型上的光学邻近效应,并且使用所选择的设计参数来构造第三半导体器件。