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公开(公告)号：US4159919A
公开(公告)日：1979-07-03
申请号：US869779
申请日：1978-01-16
申请人： James H. McFee , Barry I. Miller
发明人： James H. McFee , Barry I. Miller
IPC分类号： C30B23/08 , C30B23/02 , H01L21/203
CPC分类号： C30B29/40 , C30B23/002 , Y10S148/006 , Y10S148/169 , Y10S438/961
摘要： An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quantities of two or more alloying elements in the same oven.
摘要翻译： 通过分子束外延形成三元和四元外延膜的改进方法包括通过在同一烘箱中加热预定的独立可调量的两种或更多种合金元素来精确地控制最终化合物中两种合金元素的浓度比。
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公开(公告)号：US4492852A
公开(公告)日：1985-01-08
申请号：US465800
申请日：1983-02-11
IPC分类号： H01L21/203 , C30B23/06 , H05B1/00 , H01L21/20
CPC分类号： C30B23/06
摘要： A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship.The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100.degree. C. for silicon) regardless of the DC current applied to the filament.
摘要翻译： 适用于超高真空MBE的衬底加热装置包括响应于用于产生热能的DC电流的灯丝，围绕灯丝的金属外壳，在其一端具有孔，中间半导体衬底平行于并分离 半导体生长衬底和安装到能够以规定关系保持衬底的外壳的衬底支撑件。 中间半导体衬底将半导体生长衬底的表面上的温度调节为小于或等于固定温度（对于硅为大约1100℃），而不管施加到灯丝的直流电流如何。
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3.发明授权Rapid alteration of ion implant dopant species to create regions of opposite conductivity 失效快速改变离子注入掺杂物种以产生相反导电性的区域
公开(公告)号：US4385946A
公开(公告)日：1983-05-31
申请号：US275418
申请日：1981-06-19
IPC分类号： H01J37/317 , H01L21/203 , H01L21/265 , H01L21/263
CPC分类号： H01L21/265 , H01L21/02381 , H01L21/02532 , H01L21/02631
摘要： A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.
摘要翻译： 公开了一种制造半导体器件的分子束外延方法，其中通过建立包含掺杂剂离子的等离子体来注入掺杂剂，并且离子通过漂移室耦合以撞击生长的衬底表面。 在离子枪中形成的等离子体具有硼和砷的离子，因此可以通过设置存在于离子枪中的质量过滤器来确定选择用于注入的掺杂剂。 通过简单地重新调整离子枪中的质量过滤器，可以在几秒钟内完成相反导电类型的掺杂剂的改变。
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