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14 条记录 (耗时 0.015 秒)

    Burst mode digital data receiver
    2.
    发明授权
    Burst mode digital data receiver 失效
    突发模式数字数据接收器

    公开(公告)号：US5430766A

    公开(公告)日：1995-07-04

    申请号：US293908

    申请日：1994-08-22

    申请人： Yusuke Ota ,  Robert G. Swartz

    发明人： Yusuke Ota ,  Robert G. Swartz

    IPC分类号： H04B1/06 ,  H04B1/18 ,  H04B10/158 ,  H04B14/04 ,  H04L25/03 ,  H04L25/06

    CPC分类号： H04B10/695 ,  H04B10/6933 ,  H04L25/06

    摘要： A dc-coupled packet mode digital data receiver, for use with an optical bus uses peak detectors to adaptively establish an instantaneous logic threshold at the beginning of a data burst. A dc compensator, responsive to outputs of the peak detectors, shunts dc or low frequency currents, corresponding to "dark level" optical signals, from the input of the receiver.

    摘要翻译： 与光总线一起使用的直流耦合分组模式数字数据接收机使用峰值检测器在数据突发开始时自适应地建立瞬时逻辑门限。 直流补偿器响应于峰值检测器的输出，从接收器的输入端分流对应于“暗电平”光信号的直流或低频电流。

    Packet mode digital data receiver
    3.
    发明授权
    Packet mode digital data receiver 失效
    分组模式数字数据接收机

    公开(公告)号：US5371763A

    公开(公告)日：1994-12-06

    申请号：US976037

    申请日：1992-11-13

    申请人： Yusuke Ota ,  Robert G. Swartz

    发明人： Yusuke Ota ,  Robert G. Swartz

    IPC分类号： H04B1/06 ,  H04B1/18 ,  H04B10/04 ,  H04B10/06 ,  H04B10/14 ,  H04B10/158 ,  H04B10/26 ,  H04B10/28 ,  H04B14/04 ,  H04L25/03 ,  H04L25/06

    CPC分类号： H04B10/695 ,  H04B10/6933 ,  H04L25/06

    摘要： A dc-coupled packet mode digital data receiver, for use with an optical bus, uses a peak detector(s) to adaptively establish an instantaneous logic threshold at the beginning of a data burst. A reset circuit resets the peak detector(s) and other circuits of the receiver in response to an end-of-packet reset signal, thereby enabling the reception of closely-spaced burst date packets which have greatly differing power levels.

    摘要翻译： 与光总线一起使用的直流耦合分组模式数字数据接收机使用峰值检测器在数据突发开始时自适应地建立瞬时逻辑阈值。 复位电路响应于分组结束复位信号复位接收机的峰值检测器和其他电路，从而使得能够接收具有极大不同功率电平的紧密间隔的脉冲串日期分组。

    High-speed multiplexer circuit
    4.
    发明授权
    High-speed multiplexer circuit 失效
    高速多路复用电路

    公开(公告)号：US4789984A

    公开(公告)日：1988-12-06

    申请号：US109122

    申请日：1987-10-16

    申请人： Robert G. Swartz

    发明人： Robert G. Swartz

    IPC分类号： H04J3/04 ,  H04J3/06 ,  H04L7/033 ,  H04J3/02

    CPC分类号： H04J3/047 ,  H04J3/0685

    摘要： A high data rate multiplexer (MUX) architecture includes front-end and rear-end MUXs clocked at a system clock rate equal to one-half of the MUX output data rate. The front-end MUX selects inputs under control of select signals derived from multiple phases of a select clock. The select clock is derived from the system clock. The number of select signals is equal to the multiplexing factor of the MUX.

    Growth substrate heating arrangement for UHV silicon MBE
    5.
    发明授权
    Growth substrate heating arrangement for UHV silicon MBE 失效
    用于特高压硅MBE的生长衬底加热布置

    公开(公告)号：US4492852A

    公开(公告)日：1985-01-08

    申请号：US465800

    申请日：1983-02-11

    申请人： Sean N. Finegan ,  James H. McFee ,  Robert G. Swartz

    发明人： Sean N. Finegan ,  James H. McFee ,  Robert G. Swartz

    IPC分类号： H01L21/203 ,  C30B23/06 ,  H05B1/00 ,  H01L21/20

    CPC分类号： C30B23/06

    摘要： A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship.The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100.degree. C. for silicon) regardless of the DC current applied to the filament.

    摘要翻译： 适用于超高真空MBE的衬底加热装置包括响应于用于产生热能的DC电流的灯丝，围绕灯丝的金属外壳，在其一端具有孔，中间半导体衬底平行于并分离 半导体生长衬底和安装到能够以规定关系保持衬底的外壳的衬底支撑件。 中间半导体衬底将半导体生长衬底的表面上的温度调节为小于或等于固定温度（对于硅为大约1100℃），而不管施加到灯丝​​的直流电流如何。

    Means for controlling a semiconductor device and communication system comprising the means
    8.
    发明授权
    Means for controlling a semiconductor device and communication system comprising the means 失效
    用于控制半导体器件的装置和包括该装置的通信系统

    公开(公告)号：US4680810A

    公开(公告)日：1987-07-14

    申请号：US749746

    申请日：1985-06-28

    申请人： Robert G. Swartz

    发明人： Robert G. Swartz

    IPC分类号： H01L29/88 ,  H01L21/66 ,  H01S5/042 ,  H01S5/068 ,  H04B10/155 ,  H04B9/00

    CPC分类号： H04B10/504 ,  H01S5/06808 ,  H04B10/564 ,  H01S5/06812

    摘要： The novel technique for stabilizing an electronic device, e.g., a semiconductor laser, is disclosed. The technique can advantageously be used to stabilize the bias current of such a laser at or near the lasing threshold of the device. A preferred application of thus stabilized lasers is in optical communication systems. The inventive technique comprises determination of a derivative of a variable characteristic of the device operation, e.g., the voltage across a laser, with respect to a parameter, e.g., the laser bias current. The derivative is determined by a novel method. For the particular case of laser bias stabilization, the method comprises injecting one or more nonsinusoidal ac current components into the laser, and phase-sensitivity detecting the voltage changes at the ac frequencies. The method can, in principle, be used to determine derivatives of arbitrarily high order. A circuit capable of determining the second, third and fourth derivatives of the voltage as a function of bias current is disclosed. The derivative extraction method can also be embodied in measurement apparatus, and as useful in other process control applications.

    摘要翻译： 公开了用于稳定诸如半导体激光器的电子器件的新技术。 该技术可以有利地用于在设备的激光阈值处或附近稳定这种激光器的偏置电流。 这样稳定的激光器的优选应用在光通信系统中。 本发明的技术包括相对于诸如激光偏置电流的参数确定器件操作的可变特性的导数，例如激光器两端的电压。 该衍生物由一种新方法确定。 对于激光偏置稳定的特定情况，该方法包括将一个或多个非正弦交流电流分量注入到激光器中，并且相位灵敏度检测在交流频率处的电压变化。 该方法原则上可用于确定任意高阶的导数。 公开了能够确定作为偏置电流的函数的电压的第二，第三和第四导数的电路。 导数提取方法也可以体现在测量设备中，并且在其他过程控制应用中也是有用的。

    Microwave transistor
    9.
    发明授权
    Microwave transistor 失效
    微波晶体管

    公开(公告)号：US4428111A

    公开(公告)日：1984-01-31

    申请号：US327790

    申请日：1981-12-07

    申请人： Robert G. Swartz

    发明人： Robert G. Swartz

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/732 ,  H01L21/203 ,  H01L21/302

    CPC分类号： H01L29/66287 ,  H01L29/732 ,  Y10S438/978

    摘要： A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.

    摘要翻译： 描述了制造高速双极晶体管的工艺，其中首先使用分子束外延（MBE）生长集电极，基极和发射极层。 执行台面蚀刻以隔离基极 - 发射极区域，并且使用MBE在该隔离区域上生长接触层以与薄的基底层接触。 选择性地蚀刻接触层以暴露发射极层，并且沉积金属以制造发射极，基极和集电极触点。

    Semiconductor lasers with selective driving circuit
    10.
    发明授权
    Semiconductor lasers with selective driving circuit 失效
    具有选择性驱动电路的半导体激光器

    公开(公告)号：US4359773A

    公开(公告)日：1982-11-16

    申请号：US166045

    申请日：1980-07-07

    申请人： Robert G. Swartz ,  Ping K. Tien ,  Bruce A. Wooley

    发明人： Robert G. Swartz ,  Ping K. Tien ,  Bruce A. Wooley

    IPC分类号： H01S5/02 ,  H01S5/026 ,  H01S5/062 ,  H01S5/0683 ,  H01S5/40 ,  H04B10/00 ,  H01S3/10

    CPC分类号： H01S5/0683 ,  H01S5/4031 ,  H04B10/032 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0427 ,  H01S5/06213 ,  H01S5/06832

    摘要： A plurality of semiconductor lasers (431-434) and a photodetector (120) are mounted on a silicon substrate (100) having an integrated circuit (101) fabricated therein. The integrated circuit includes a biasing circuit (405) for establishing a threshold current level that is dependent on the output of the photodetector and a modulator circuit (404) for providing a modulation current that is dependent on the digital values in an input signal. A semiconductor switch (406) selects only one of the plurality of semiconductor lasers for activation by the biasing and modulator circuits. The integrated circuit also includes a circuit (408) that operates the semiconductor switch so as to selectively activate a different one of the plurality of semiconductor lasers in response to either a predetermined output from said photodetector or in response to an external supervisory signal.

    摘要翻译： 多个半导体激光器（431-434）和光电检测器（120）安装在其上制造有集成电路（101）的硅衬底（100）上。 集成电路包括用于建立取决于光电检测器的输出的阈值电流电平的偏置电路（405）和用于提供取决于输入信号中的数字值的调制电流的调制器电路（404）。 半导体开关（406）仅选择多个半导体激光器中的一个来激活偏置和调制电路。 集成电路还包括操作半导体开关的电路（408），以响应于来自所述光电检测器的预定输出或响应于外部监控信号来选择性地激活多个半导体激光器中的不同的半导体激光器。